Publications

Displaying 87 publications
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Journal Article

  1. W. Zhong, Y. Zhao, B. Zhu, J. Sha, E. S. Walker, S. R. Bank, Y. Chen, D. Akinwande, and L. Tao, "Anisotropic thermoelectric effect and field-effect devices in epitaxial bismuthene on Si (111)," Nanotechnology, vol. 31, no. 47, Sep 2020. Digital object identifier
  2. (Invited) S. D. Sifferman, H. P. Nair, R. Salas, N. T. Sheehan, S. J. Maddox, A. M. Crook, and S. R. Bank, "Highly strained mid-infrared type-I diode lasers on GaSb," IEEE J. Sel. Top. Quantum Electron., vol. 21, no. 6, pp. 248-257, Nov 2015. Digital object identifier
  3. K. W. Park, H. P. Nair, A. M. Crook, S. R. Bank, and E. T. Yu, "Quantitative scanning thermal microscopy of ErAs/GaAs superlattice structures grown by molecular beam epitaxy," APL, vol. 102, no. 6, pp. 061912, Feb 2013. Digital object identifier
  4. E. M. Krivoy, H. P. Nair, A. M. Crook, S. Rahimi, S. J. Maddox, R. Salas, D. A. Ferrer, V. D. Dasika, D. Akinwande, and S. R. Bank, "Growth and characterization of LuAs films and nanostructures," APL, vol. 101, no. 14, pp. 141910, Oct 2012. Digital object identifier
  5. K. W. Park, V. D. Dasika, H. P. Nair, A. M. Crook, S. R. Bank, and E. T. Yu, "Conductivity and structure of ErAs nanoparticles embedded in GaAs pn junctions analyzed via conductive atomic force microscopy," APL, vol. 100, no. 23, pp. 233117, Jun 2012. Digital object identifier
  6. H. P. Nair, A. M. Crook, K. M. Yu, and S. R. Bank, "Structural and optical studies of nitrogen incorporation into GaSb-based GaInSb quantum wells," APL, vol. 100, no. 2, pp. 021103, Jan 2012. Digital object identifier
  7. K. W. Park, H. P. Nair, A. M. Crook, S. R. Bank, and E. T. Yu, "Scanning capacitance microscopy of ErAs nanoparticles embedded in GaAs pn junctions," APL, vol. 99, pp. 133114, Sep 2011. Digital object identifier
  8. A. M. Crook, H. P. Nair, D. A. Ferrer, and S. R. Bank, "Suppression of planar defects in the molecular beam epitaxy of GaAs/ErAs/GaAs heterostructures," APL, vol. 99, pp. 072120, Aug 2011. Digital object identifier
  9. A. M. Crook, H. P. Nair, and S. R. Bank, "Surface segregation effects of erbium in GaAs growth and their implications for optical devices containing ErAs nanostructures," APL, vol. 98, no. 12, pp. 121108, Apr 2011. Digital object identifier
  10. A. M. Crook, H. P. Nair, and S. R. Bank, "High-performance nanoparticle-enhanced tunnel junctions for photonic devices," Physica Status Solidi (c), vol. 7, no. 10, pp. 2544-2547, Jun 2010. Digital object identifier
  11. H. P. Nair, A. M. Crook, and S. R. Bank, "Enhanced conductivity of tunnel junctions employing semimetallic nanoparticles through variation in growth temperature and deposition," APL, vol. 96, no. 22, pp. 222104, May 2010. Digital object identifier
  12. R. Kudrawiec, P. Poloczek, J. Misiewicz, H. P. Bae, T. Sarmiento, S. R. Bank, H. B. Yuen, M. A. Wistey, and J. S. Harris, "Contactless electroreflectance of GaInNAsSb/GaNAs/GaAs quantum wells emitting at 1. 5\—1. 65 \µm: Broadening of the fundamental transition," APL, vol. 94, no. 3, pp. 031903, Jan 2009. Digital object identifier
  13. R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, and J. Misiewicz, "On the Fermi level pinning in as-grown GaInNAs(Sb)/GaAs quantum wells with indium content of 8%\—32%," J. Appl. Phys., vol. 104, no. 3, pp. 033526, Aug 2008. Digital object identifier
  14. Y. Xin, .C . Y. Lin, Y. Li, H. P. Bae, H. B. Yuen, M. A. Wistey, J. S. Harris, S. R. Bank, and L. F. Lester, "Monolithic 1. 55 \µm GaInNAsSb quantum well passively modelocked lasers," Electron. Lett., vol. 44, no. 9, pp. 581-582, Apr 2008. Digital object identifier
  15. R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, and J. Misiewicz, "Contactless electroreflectance approach to study the Fermi level position in GaInNAs/GaAs quantum wells," J. Appl. Phys., vol. 102, no. 11, pp. 113501, Dec 2007. Digital object identifier
  16. A. M. Crook, E. Lind, Z. Griffith, M. J. Rodwell, J. D. Zimmerman, A. C. Gossard, and S. R. Bank, "Low resistance, nonalloyed Ohmic contacts to InGaAs," APL, vol. 91, no. 19, pp. 192114, Nov 2007. Digital object identifier
  17. S. R. Bank, H. P. Bae, L. L. Goddard, H. B. Yuen, M. A. Wistey, R. Kudrawiec, and J. S. Harris, "Recent Progress on 1. 55-\µm Dilute-Nitride Lasers," IEEE J. Quantum Electron., vol. 43, no. 9, pp. 773-785, Sep 2007. Digital object identifier
  18. J. S. Harris, R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, D. B. Jackrel, E. R. Pickett, T. Sarmiento, L. L. Goddard, V. Lordi, and T. Gugov, "Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications," Physica Status Solidi (b), vol. 244, no. 8, pp. 2707-2729, Jul 2007. Digital object identifier
  19. H. P. Bae, S. R. Bank, H. B. Yuen, T. Sarmiento, E. R. Pickett, M. A. Wistey, and J. S. Harris, "Temperature dependencies of annealing behaviors of GaInNAsSb/GaNAs quantum wells for long wavelength dilute-nitride lasers," APL, vol. 90, no. 23, pp. 231119, Jun 2007. Digital object identifier
  20. R. Kudrawiec, S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, L. L. Goddard, J. S. Harris, M. Gladysiewicz, M. Motyka, and J. Misiewicz, "Conduction band offset for Ga0. 62In0. 38NxAs0. 991 - xSb0. 009/GaNyAs1 - y/GaAs systems with the ground state transition at 1. 5-1. 65 \µm," APL, vol. 90, no. 13, pp. 131905, Mar 2007. Digital object identifier
  21. R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, and J. Misiewicz, "Fermi level shift in GaInNAsSb/GaAs quantum wells upon annealing studied by contactless electroreflectance," APL, vol. 90, no. 6, pp. 061902, Feb 2007. Digital object identifier
  22. R. Kudrawiec, H. B. Yuen, M. Motyka, M. Gladysiewicz, J. Misiewicz, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "Contactless electroreflectance of GaInNAsSb∕GaAs single quantum wells with indium content of 8%–32%," J. of Appl. Phys., vol. 101, no. 1, pp. 013504, Jan 2007. Digital object identifier
  23. S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, A. Moto, and J. S. Harris, "Enhanced luminescence in GaInNAsSb quantum wells through variation of the arsenic and antimony fluxes," APL, vol. 88, no. 24, pp. 241923, Jun 2006. Digital object identifier
  24. R. Kudrawiec, M. Gladysiewicz, J. Misiewicz, H. B. Yuen, S. R. Bank, M. A. Wistey, H. P. Bae, and J. S. Harris, "Interband transitions in GaN0. 02As0. 98-xSbx/GaAs (0<x<0. 11) single quantum wells studied by contactless electroreflectance spectroscopy," Phys. Rev. B, vol. 73, pp. 245413, Jun 2006. Digital object identifier
  25. S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, and J. S. Harris, "Overannealing effects in GaInNAs(Sb) alloys and their importance to laser applications," APL, vol. 88, no. 22, pp. 221115, Dec 2006. Digital object identifier
  26. H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "Effects of strain on the optimal annealing temperature of GaInNAsSb quantum wells," APL, vol. 88, no. 22, pp. 221913, May 2006. Digital object identifier
  27. R. Kudrawiec, M. Motyka, M. Gladysiewicz, J. Misiewicz, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "Band gap discontinuity in Ga0. 9In0. 1N0. 027As0. 973 - xSbx/GaAs single quantum wells with 0 ≤ x < 0. 06 studied by contactless electroreflectance spectroscopy," APL, vol. 88, no. 22, pp. 221113, May 2006. Digital object identifier
  28. M. A. Wistey, S. R. Bank, H. P. Bae, H. B. Yuen, E. R. Pickett, L. L. Goddard, and J. S. Harris, "GaInNAsSb/GaAs vertical cavity surface emitting lasers at 1534 nm," Electron. Lett., vol. 42, no. 5, pp. 282-283, Mar 2006. Digital object identifier
  29. S. R. Bank, H. P. Bae, H. B. Yuen, M. A. Wistey, L. L. Goddard, and J. S. Harris, "Room-temperature continuous-wave 1. 55 \µm GaInNAsSb laser on GaAs," Electron. Lett., vol. 42, no. 3, pp. 156-157, Feb 2006. Digital object identifier
  30. H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "The role of antimony on properties of widely varying GaInNAsSb compositions," J. Appl. Phys., vol. 99, no. 9, pp. 093504, Dec 2006. Digital object identifier
  31. S. R. Bank, H. B. Yuen, M. A. Wistey, V. Lordi, H. P. Bae, and J. S. Harris, "Effects of growth temperature on the structural and optical properties of 1. 55 \µm GaInNAsSb quantum wells grown on GaAs," APL, vol. 87, no. 2, pp. 021908, Jul 2005. Digital object identifier
  32. S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, H. P. Bae, and J. S. Harris, "Molecular-beam epitaxy growth of low-threshold cw GaInNAsSb lasers at 1. 5 \µm," J. Vac. Sci. Technol. B, vol. 23, no. 3, pp. 1337-1340, Jun 2005. Digital object identifier
  33. M. A. Wistey, S. R. Bank, H. B. Yuen, H. P. Bae, and J. S. Harris, "Nitrogen plasma optimization for high-quality dilute nitrides," J. Cryst. Growth, vol. 278, no. 1-4, pp. 229-233, May 2005. Digital object identifier
  34. R. Kudrawiec, K. Ryczko, J. Misiewicz, H. B. Yuen, S. R. Bank, M. A. Wistey, H. P. Bae, and J. S. Harris, "Band-gap discontinuity in GaN0. 02As0. 87Sb0. 11/GaAs single-quantum wells investigated by photoreflectance spectroscopy," APL, vol. 86, no. 14, pp. 141908, Mar 2005. Digital object identifier
  35. R. Kudrawiec, H. B. Yuen, K. Ryczko, J. Misiewicz, S. R. Bank, M. A. Wistey, H. P. Bae, and J. S. Harris, "Photoreflectance and photoluminescence investigations of a step-like GaInNAsSb/GaAsN/GaAs quantum well tailored at 1. 5 \µm: The energy level structure and the Stokes shift," J. Appl. Phys., vol. 97, no. 5, pp. 053515, Feb 2005. Digital object identifier
  36. H. B. Yuen, M. A. Wistey, S. R. Bank, H. P. Bae, and J. S. Harris, "Investigation of nitrogen flow variation into a radio frequency plasma cell on plasma properties and GaInNAs grown by molecular beam epitaxy," J. Vac. Sci. Technol. B, vol. 23, no. 3, pp. 1328-1332, Dec 2005. Digital object identifier
  37. S. R. Bank, M. A. Wistey, L. L. Goddard, H. B. Yuen, H. P. Bae, and J. S. Harris, "High-performance 1. 5 \µm GaInNAsSb lasers grown on GaAs," Electron. Lett., vol. 40, no. 19, pp. 1186-1187, Sep 2004. Digital object identifier

Conference Paper

  1. D. J. Ironside, A. M. Crook, A. M. Skipper, and S. R. Bank, "Optimal Integration of Rare-Earth Monopnictide Nanostructures in III-V for High Optical Quality Applications," 58th Electronic Materials Conf. (EMC), Newark, DE, Jun 2016.
  2. (Invited) S. R. Bank, S. D. Sifferman, H. P. Nair, N. T. Sheehan, R. Salas, S. J. Maddox, and A. M. Crook, "Highly strained type-I diode lasers on GaSb," SPIE Photonics West, San Francisco, CA, Feb 2016.
  3. E. M. Krivoy, H. P. Nair, A. M. Crook, S. Rahimi, Y. Jiang, S. J. Maddox, R. Salas, G. Kelp, G. Shvets, M. A. Belkin, D. Akinwande, and S. R. Bank, "Rare-earth monopnictide alloys for tunable epitaxial semimetals," North American Molecular Beam Epitaxy Conf. (NAMBE), Atlanta, GA, Oct 2012.
  4. K. W. Park, V. D. Dasika, H. P. Nair, A. M. Crook, S. R. Bank, and E. T. Yu, "Scanned Probe Characterization of ErAs/GaAs Nanostructures below the Resolution Limit via Statistical Analysis," International Symposium on Compound Semiconductors (ISCS), Santa Barbara, CA, Aug 2012.
  5. (Invited) S. R. Bank, E. M. Krivoy, A. M. Crook, H. P. Nair, R. Salas, and V. D. Dasika, "New Epitaxial Metallic Nanostructure Materials for Photonic Devices," SPIE Optics and Photonics Meeting, San Diego, CA, Aug 2012.
  6. H. P. Nair, A. M. Crook, K. M. Yu, and S. R. Bank, "Thermal Annealing Induced Optical Quality Enhancement in GaSb-Based Dilute-Nitrides," 54th Electronic Materials Conf. (EMC), University Park, PA, Jun 2012.
  7. A. M. Crook, H. P. Nair, J. H. Lee, D. A. Ferrer, D. Akinwande, and S. R. Bank, "Overgrowth of Epitaxially-Embedded ErAs Films on GaAs," 54th Electronic Materials Conf. (EMC), University Park, PA, Jun 2012.
  8. E. M. Krivoy, H. P. Nair, A. M. Crook, S. Rahimi, Y. Jiang, S. J. Maddox, R. Salas, M. A. Belkin, D. Akinwande, and S. R. Bank, "Rare-earth monopnictides films for tunable frequency transparent Ohmic contacts," 54th Electronic Materials Conf. (EMC), Jun 2012.
  9. R. Salas, A. M. Crook, H. P. Nair, E. M. Krivoy, S. J. Maddox, and S. R. Bank, "LuAs/InGaAs Photoconductive Materials for Heterodyne Terahertz Generation," 54th Electronic Materials Conf. (EMC), University Park, PA, Jun 2012.
  10. H. P. Nair, A. M. Crook, K. M. Yu, and S. R. Bank, "Dilute-Nitride Active Regions on GaSb for Mid-Infrared Semiconductor Diode Lasers," Conf. on Lasers and Electro Optics (CLEO), San Jose, CA, May 2012.
  11. A. M. Crook, H. P. Nair, D. A. Ferrer, and S. R. Bank, "Growth of semimetallic ErAs films epitaxially embedded in GaAs," SPIE NanoScience and Engineering, San Diego, CA, Aug 2011.
  12. E. M. Krivoy, S. J. Maddox, H. P. Nair, A. M. Crook, V. D. Dasika, D. A. Ferrer, and S. R. Bank, "LuAs films and nanostructures," North American Molecular Beam Epitaxy Conf. (NAMBE), San Diego, CA, Aug 2011.
  13. A. M. Crook, H. P. Nair Jong Ho Lee, D. A. Ferrer, D. Akinwande, and S. R. Bank, "Nanoparticle Seeded Growth of ErAs Films Embedded in GaAs," North American Molecular Beam Epitaxy Conf. (NAMBE), San Diego, CA, Aug 2011.