Publications
Journal Article
- D. J. Herrera, A. A. Dadey, S. D. March, S. R. Bank, and J. C. Campbell, "AlInAsSb Geige-mode SWIR and eSWIR SPADs with high avalanche probability," Optics Express, vol. 32, no. 2, pp. 2106-2113, Jan 2024.
- A. A. Dadey, A. H. Jones, S. D. March, S. R. Bank, and J. C. Campbell, "Near-unity excess noise factor of staircase avalanche photodiodes," Optica, vol. 10, no. 10, pp. 1353-1357, Oct 2023.
- J. A. McArthur, A. A. Dadey, S. D. March, A. H. Jones, X. Xue, R. Salas, J. C. Campbell, and S. R. Bank, "Demonstration of the AlInAsSb Cascaded Multiplier Avalanche Photodiode," Applied Physics Letters, vol. 123, no. 4, pp. 041106, Jul 2023.
- D. Chen, S. D. March, A. H. Jones, Y. Shen, A. A. Dadey, K. Sun, J. A. McArthur, A. M. Skipper, X. Xue, B. Guo, J. Bai, S. R. Bank, and J. C. Campbell, "Photon-trapping-enhanced avalanche photodiodes for mid-infrared applications," Nature Photonics, May 2023.
- A. H. Jones, Y. Shen, K. Sun, D. Chen, S. D. March, S. R. Bank, and J. C. Campbell, "Room-temperature bandwidth of 2-\µm AlInAsSb avalanche photodiodes," Optics Express, vol. 29, no. 23, pp. 38939-38945, Nov 2021.
- D. Chen, J. A. McArthur, S. D. March, X. Xue, A. H. Jones, A. A. Dadey, S. R. Bank, and J. C. Campbell, "Comparison and analysis of Al0. 7InAsSb avalanche photodiodes with different background doping polarities," Applied Physics Letters, vol. 119, no. 3, pp. 032101, Jul 2021.
- S. D. March, A. H. Jones, J. C. Campbell, and S. R. Bank, "Multistep staircase avalanche photodiodes with extremely low noise and deterministic amplification," Nature Photonics, pp. 1-7, May 2021.
- (Invited) S. D. March, A. H. Jones, A. J. Muhowski, S. J. Maddox, M. Ren, and S. R. Bank, "Digital Alloy Staircase Avalanche Photodetectors with Tunneling-enhanced Gain," IEEE Journal of Select Topics in Quantum Electronics, vol. 28, no. 2, pp. 1-13, Mar 2021.
- A. J. Muhowski, A. M. Skipper, S. D. March, M. J. Rodwell, and S. R. Bank, "A true hero of the trade: On the critical contributions of Art Gossard to modern device techonology," Journal of Vacuum Science \& Technology A, vol. 39, no. 2, pp. 020804, Feb 2021.
- A. J. Muhowski, S. D. March, S. J. Maddox, D. Wasserman, and S. R. Bank, "Minority carrier lifetimes in digitally-grown, narrow-gap AlInAsSb alloys," Applied Physics Letters, vol. 119, no. 25, pp. 251102, Dec 2021.
- J. Zheng, S. Z. Ahmed, Y. Yuan, A. H. Jones, Y. Tan, A. K. Rockwell, S. D. March, S. R. Bank, A. W. Ghosh, and J. C. Campbell, "Full band Monte Carlo simulation of AlInAsSb digital alloys," InfoMat, vol. 2, no. 06, pp. 1236-1240, Nov 2020.
- A. H. Jones, S. D. March, S. R. Bank, and J. C. Campbell, "Low-noise high-temperature AlInAsSb/GaSb avalanche photodiodes for 2-\µm applications," Nature Photonics, no. 14, pp. 559–563, May 2020.
- P. Kompella, B. Gracia, L. LeBlanc, S. Engelman, C. Kulkarni, N. Desai, V. June, S. D. March, S. Pattengale, G. Rodriguez-Rivera, S. Woo. Ryu, I. Strohkendl, P. Mandke, and G. Clark, "Interactive youth science workshops benefit student participants and graduate student mentors," PLOS Biology, vol. 18, no. 3, pp. 1-10, Mar 2020.
- J. Zheng, S. Z. Ahmed, Y. Yuan, A. H. Jones, Y. Tan, A. K. Rockwell, S. D. March, S. R. Bank, A. W. Ghosh, and J. C. Campbell, "Full band Monte Carlo simulation of AlInAsSb digital alloys," InfoMat, vol. 2, no. 6, pp. 1236-1240, Mar 2020.
- A. H. Jones, A. K. Rockwell, S. D. March, Y. Yuan, S. R. Bank, and J. C. Campbell, "High Gain, Low Dark Current Al0. 8In0. 2As0. 23Sb0. 77 Avalanche Photodiodes," IEEE Photonics Technology Letters, vol. 31, no. 24, pp. 1948-1951, Dec 2019.
- J. Zheng, A. H. Jones, Y. Tan, A. K. Rockwell, S. D. March, S. Z. Ahmed, C. A. Dukes, A. W. Ghosh, S. R. Bank, and J. C. Campbell, "Characterization of band offsets in AlxIn1-xAsySb1-y alloys with varying Al composition," Applied Physics Letters, vol. 115, no. 12, pp. 122105, Sep 2019.
- Y. Yuan, J. Zheng, K. Sun, A. H. Jones, A. K. Rockwell, S. D. March, Y. Shen, S. R. Bank, and J. C. Campbell, "Stark‐Localization‐Limited Franz–Keldysh Effect in InAlAs Digital Alloys," physica status solidi (RRL) – Rapid Research Letters, vol. 13, no. 9, pp. 1900272, Jun 2019.
- E. S. Walker, S. E. Muschinske, C. J. Brennan, S. Ryul. Na, T. Trivedi, S. D. March, Y. Sun, T. Yang, A. Yau, D. Jung, A. F. Briggs, E. M. Krivoy, M. L. Lee, K. M. Liechti, E. T. Yu, D. Akinwande, and S. R. Bank, "Composition-dependent structural transition in epitaxial Bi1-xSbx thin films on Si(111)," Physical Review Materials, vol. 3, no. 6, pp. 064201, Jun 2019.
- Y. Yuan, A. K. Rockwell, Y. Peng, J. Zheng, S. D. March, A. H. Jones, S. R. Bank, and J. C. Campbell, "Comparison of Different Period Digital Alloy Al0. 7InAsSb Avalanche Photodiodes," Journal of Lightwave Technology, vol. 37, no. 14, pp. 3647-3654, May 2019.
- Z. Yao, V. Semenenko, J. Zhang, S. Mills, X. Zhao, X. Chen, H. Hu, R. Mescall, T. Ciavatti, S. D. March, S. R. Bank, T. H. Tao, X. Zhang, V. Perebeinos, Q. Dai, X. Du, and M. Liu, "Photo-induced terahertz near-field dynamics of graphene/InAs heterostructures," Optix Express, vol. 27, no. 10, pp. 13611, May 2019.
- Y. Yuan, J. Zheng, A. K. Rockwell, S. D. March, S. R. Bank, and J. C. Campbell, "AlInAsSb Impact Ionization Coefficients," IEEE Photonics Technology Letters, vol. 31, no. 4, Feb 2019.
- (Invited) S. R. Bank, J. C. Campbell, S. J. Maddox, M. Ren, A. K. Rockwell, M. E. Woodson, and S. D. March, "Avalanche Photodiodes Based on the AlInAsSb Materials System," IEEE J. Sel. Top. Quantum Electron., vol. 24, Aug 2018.
- Y. Liu, J. Lee, S. D. March, N. Nookala, D. Palaferri, J. F. Klem, S. R. Bank, I. Brener, and M. A. Belkin, "Difference-Frequency Generation in Polaritonic Intersubband Nonlinear Metasurfaces," Advanced Optical Materials, vol. 6, no. 20, pp. 1800681, Aug 2018.
- A. K. Rockwell, Y. Yuan, A. H. Jones, S. D. March, S. R. Bank, and J. C. Campbell, "Al0. 8In0. 2As0. 23Sb0. 77 Avalanche Photodiodes," IEEE Photonics Technology Letters, vol. 30, pp. 1048-1051, Jun 2018.
- N. Nookala, J. Xu, O. Wolf, S. D. March, R. Sarma, S. R. Bank, J. F. Klem, I. Brener, and M. A. Belkin, "Mid-infrared second-harmonic generation in ultra-thin plasmonic metasurfaces without a full-metal backplane," Applied Physics B, vol. 124, pp. 1-7, Jun 2018.
- (Invited) S. R. Bank, J. C. Campbell, S. J. Maddox, M. Ren, A. K. Rockwell, M. E. Woodson, and S. D. March, "Avalanche Photodiodes Based on the AlInAsSb Materials System," IEEE Journal of Selected Topics in Quantum Electronics, vol. 24, pp. 1-7, Mar 2018.
- A. K. Rockwell, M. Ren, M. E. Woodson, A. H. Jones, S. D. March, Y. Tan, Y. Yuan, Y. Sun, R. Hool, S. J. Maddox, M. L. Lee, A. W. Ghosh, J. C. Campbell, and S. R. Bank, "Toward Deterministic Construction of Low Noise Avalanche Photodetector Materials," Applied Physics Letters, vol. 113, no. 10, pp. 102106, Dec 2018.
- T. Trivedi, A. Roy, H. C. P. Movva, E. S. Walker, S. R. Bank, D. P. Neikirk, and S. K. Banerjee, "Versatile Large-Area Custom-Feature van der Waals Epitaxy of Topological Insulators," ACS Nano, vol. 11, pp. 7457-7467, Jul 2017.
- E. S. Walker, S. Ryul. Na, D. Jung, S. D. March, J. Kim, T. Trivedi, W. Li, L. Tao, M. L. Lee, K. M. Liechti, D. Akinwande, and S. R. Bank, "Large-Area Dry Transfer of Single-Crystalline Epitaxial Bismuth Thin Films," Nano Letters, vol. 16, no. 11, pp. 6931-6938, Oct 2016.
- S. J. Maddox, S. D. March, and S. R. Bank, "Broadly Tunable AlInAsSb Digital Alloys Grown on GaSb," ACS Crystal Growth \& Design, vol. 16, no. 7, pp. 3582-3586, Jun 2016.
- C. S. Schulze, X. Huang, C. Prohl, V. Fullert, S. Rybank, S. J. Maddox, S. D. March, S. R. Bank, M. L. Lee, and A. Lenz, "Atomic structure and stoichiometry of In(Ga)As/GaAs quantum dots grown on an exact-oriented GaP/Si(001) substrate," APL, vol. 108, no. 14, pp. 143101, Apr 2016.
- R. Kudrawiec, P. Poloczek, J. Misiewicz, H. P. Bae, T. Sarmiento, S. R. Bank, H. B. Yuen, M. A. Wistey, and J. S. Harris, "Contactless electroreflectance of GaInNAsSb/GaNAs/GaAs quantum wells emitting at 1. 5\—1. 65 \µm: Broadening of the fundamental transition," APL, vol. 94, no. 3, pp. 031903, Jan 2009.
- R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, and J. Misiewicz, "On the Fermi level pinning in as-grown GaInNAs(Sb)/GaAs quantum wells with indium content of 8%\—32%," J. Appl. Phys., vol. 104, no. 3, pp. 033526, Aug 2008.
- Y. Xin, .C . Y. Lin, Y. Li, H. P. Bae, H. B. Yuen, M. A. Wistey, J. S. Harris, S. R. Bank, and L. F. Lester, "Monolithic 1. 55 \µm GaInNAsSb quantum well passively modelocked lasers," Electron. Lett., vol. 44, no. 9, pp. 581-582, Apr 2008.
- R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, and J. Misiewicz, "Contactless electroreflectance approach to study the Fermi level position in GaInNAs/GaAs quantum wells," J. Appl. Phys., vol. 102, no. 11, pp. 113501, Dec 2007.
- S. R. Bank, H. P. Bae, L. L. Goddard, H. B. Yuen, M. A. Wistey, R. Kudrawiec, and J. S. Harris, "Recent Progress on 1. 55-\µm Dilute-Nitride Lasers," IEEE J. Quantum Electron., vol. 43, no. 9, pp. 773-785, Sep 2007.
- J. S. Harris, R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, D. B. Jackrel, E. R. Pickett, T. Sarmiento, L. L. Goddard, V. Lordi, and T. Gugov, "Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications," Physica Status Solidi (b), vol. 244, no. 8, pp. 2707-2729, Jul 2007.
- H. P. Bae, S. R. Bank, H. B. Yuen, T. Sarmiento, E. R. Pickett, M. A. Wistey, and J. S. Harris, "Temperature dependencies of annealing behaviors of GaInNAsSb/GaNAs quantum wells for long wavelength dilute-nitride lasers," APL, vol. 90, no. 23, pp. 231119, Jun 2007.
- R. Kudrawiec, S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, L. L. Goddard, J. S. Harris, M. Gladysiewicz, M. Motyka, and J. Misiewicz, "Conduction band offset for Ga0. 62In0. 38NxAs0. 991 - xSb0. 009/GaNyAs1 - y/GaAs systems with the ground state transition at 1. 5-1. 65 \µm," APL, vol. 90, no. 13, pp. 131905, Mar 2007.
- R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, and J. Misiewicz, "Fermi level shift in GaInNAsSb/GaAs quantum wells upon annealing studied by contactless electroreflectance," APL, vol. 90, no. 6, pp. 061902, Feb 2007.
- R. Kudrawiec, H. B. Yuen, M. Motyka, M. Gladysiewicz, J. Misiewicz, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "Contactless electroreflectance of GaInNAsSb∕GaAs single quantum wells with indium content of 8%–32%," J. of Appl. Phys., vol. 101, no. 1, pp. 013504, Jan 2007.
- S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, A. Moto, and J. S. Harris, "Enhanced luminescence in GaInNAsSb quantum wells through variation of the arsenic and antimony fluxes," APL, vol. 88, no. 24, pp. 241923, Jun 2006.
- R. Kudrawiec, M. Gladysiewicz, J. Misiewicz, H. B. Yuen, S. R. Bank, M. A. Wistey, H. P. Bae, and J. S. Harris, "Interband transitions in GaN0. 02As0. 98-xSbx/GaAs (0<x<0. 11) single quantum wells studied by contactless electroreflectance spectroscopy," Phys. Rev. B, vol. 73, pp. 245413, Jun 2006.
- S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, and J. S. Harris, "Overannealing effects in GaInNAs(Sb) alloys and their importance to laser applications," APL, vol. 88, no. 22, pp. 221115, Dec 2006.
- H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "Effects of strain on the optimal annealing temperature of GaInNAsSb quantum wells," APL, vol. 88, no. 22, pp. 221913, May 2006.
- R. Kudrawiec, M. Motyka, M. Gladysiewicz, J. Misiewicz, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "Band gap discontinuity in Ga0. 9In0. 1N0. 027As0. 973 - xSbx/GaAs single quantum wells with 0 ≤ x < 0. 06 studied by contactless electroreflectance spectroscopy," APL, vol. 88, no. 22, pp. 221113, May 2006.
- M. A. Wistey, S. R. Bank, H. P. Bae, H. B. Yuen, E. R. Pickett, L. L. Goddard, and J. S. Harris, "GaInNAsSb/GaAs vertical cavity surface emitting lasers at 1534 nm," Electron. Lett., vol. 42, no. 5, pp. 282-283, Mar 2006.
- S. R. Bank, H. P. Bae, H. B. Yuen, M. A. Wistey, L. L. Goddard, and J. S. Harris, "Room-temperature continuous-wave 1. 55 \µm GaInNAsSb laser on GaAs," Electron. Lett., vol. 42, no. 3, pp. 156-157, Feb 2006.
- H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "The role of antimony on properties of widely varying GaInNAsSb compositions," J. Appl. Phys., vol. 99, no. 9, pp. 093504, Dec 2006.
- S. R. Bank, H. B. Yuen, M. A. Wistey, V. Lordi, H. P. Bae, and J. S. Harris, "Effects of growth temperature on the structural and optical properties of 1. 55 \µm GaInNAsSb quantum wells grown on GaAs," APL, vol. 87, no. 2, pp. 021908, Jul 2005.