Publications

Displaying 77 publications
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Journal Article

  1. J. A. McArthur, A. A. Dadey, S. D. March, A. H. Jones, X. Xue, R. Salas, J. C. Campbell, and S. R. Bank, "Demonstration of the AlInAsSb Cascaded Multiplier Avalanche Photodiode," Applied Physics Letters, vol. 123, no. 4, pp. 041106, Jul 2023. Digital object identifier
  2. D. Chen, S. D. March, A. H. Jones, Y. Shen, A. A. Dadey, K. Sun, J. A. McArthur, A. M. Skipper, X. Xue, B. Guo, J. Bai, S. R. Bank, and J. C. Campbell, "Photon-trapping-enhanced avalanche photodiodes for mid-infrared applications," Nature Photonics, May 2023. Digital object identifier
  3. B. Guo, S. Z. Ahmed, X. Xue, A. K. Rockwell, J. Ha, S. Lee, B. Liang, A. H. Jones, J. A. McArthur, S. H. Kodati, T. J. Ronningen, S. Krishna, J. Kim, S. R. Bank, A. W. Ghosh, and J. C. Campbell, "Temperature dependence of avalanche breakdown of AlGaAsSb and AlInAsSb avalanche photodiodes," Journal of Lightwave Technology, Jun 2022. Digital object identifier
  4. R. Wang, D. Chen, J. A. McArthur, X. Xue, A. H. Jones, S. R. Bank, and J. C. Campbell, "Al0. 3InAsSb/Al0. 7InAsSb Digital Alloy nBn Photodetectors," Journal of Lightwave Technology, vol. 40, no. 1, pp. 113-120, Oct 2021. Digital object identifier
  5. D. Chen, J. A. McArthur, S. D. March, X. Xue, A. H. Jones, A. A. Dadey, S. R. Bank, and J. C. Campbell, "Comparison and analysis of Al0. 7InAsSb avalanche photodiodes with different background doping polarities," Applied Physics Letters, vol. 119, no. 3, pp. 032101, Jul 2021. Digital object identifier
  6. D. Chen, R. Wang, J. A. McArthur, X. Xue, A. H. Jones, S. R. Bank, and J. C. Campbell, "Demonstration of infrared nBn photodetectors based on the AlInAsSb digital alloy materials system," Applied Physics Letters, vol. 119, no. 3, pp. 031101, Jul 2021. Digital object identifier
  7. Z. Dang, W. Wang, J. Chen, E. S. Walker, S. R. Bank, D. Akinwande, Z. Ni, and L. Tao, "Vis-NIR photodetector with microsecond response enabled by 2D bismuth/Si(111) heterojunction," 2D Materials, vol. 8, no. 3, pp. 035002, Mar 2021. Digital object identifier
  8. W. Zhong, Y. Zhao, B. Zhu, J. Sha, E. S. Walker, S. R. Bank, Y. Chen, D. Akinwande, and L. Tao, "Anisotropic thermoelectric effect and field-effect devices in epitaxial bismuthene on Si (111)," Nanotechnology, vol. 31, no. 47, Sep 2020. Digital object identifier
  9. F. He, E. S. Walker, Y. Zhou, R. D. Montano, S. R. Bank, and Y. Wang, "Phase transition in epitaxial bismuth nanofilms," Applied Physics Letters, vol. 117, no. 7, pp. 073103, Aug 2020. Digital object identifier
  10. F. He, E. S. Walker, Y. Zhou, S. E. Muschinske, S. R. Bank, and Y. Wang, "Quantum confinement of coherent acoustic phonons in transferred single-crystalline bismuth nanofilms," Applied Physics Letters, vol. 116, no. 26, pp. 263101, Jun 2020. Digital object identifier
  11. E. S. Walker, S. E. Muschinske, C. J. Brennan, S. Ryul. Na, T. Trivedi, S. D. March, Y. Sun, T. Yang, A. Yau, D. Jung, A. F. Briggs, E. M. Krivoy, M. L. Lee, K. M. Liechti, E. T. Yu, D. Akinwande, and S. R. Bank, "Composition-dependent structural transition in epitaxial Bi1-xSbx thin films on Si(111)," Physical Review Materials, vol. 3, no. 6, pp. 064201, Jun 2019. Digital object identifier
  12. N. Roschewsky, E. S. Walker, P. Gowtham, S. E. Muschinske, F. Hellman, S. R. Bank, and S. Salahuddin, "Spin-orbit torque and Nernst effect in Bi-Sb/Co heterostructures," Phys. Rev. B, vol. 99, pp. 195103, May 2019. Digital object identifier
  13. J. Jeong, K. Chen, E. S. Walker, N. Roy, F. He, P. Liu, G. Willson, M. Cullinan, S. R. Bank, and Y. Wang, "In-Plane Thermal Conductivity Measurement with Nanosecond Grating Imaging Technique," Nanoscale and Microscale Thermophysical Engineering, vol. 22, no. 2, pp. 83-96, Dec 2017. Digital object identifier
  14. T. Trivedi, A. Roy, H. C. P. Movva, E. S. Walker, S. R. Bank, D. P. Neikirk, and S. K. Banerjee, "Versatile Large-Area Custom-Feature van der Waals Epitaxy of Topological Insulators," ACS Nano, vol. 11, pp. 7457-7467, Jul 2017. Digital object identifier
  15. E. S. Walker, S. Ryul. Na, D. Jung, S. D. March, J. Kim, T. Trivedi, W. Li, L. Tao, M. L. Lee, K. M. Liechti, D. Akinwande, and S. R. Bank, "Large-Area Dry Transfer of Single-Crystalline Epitaxial Bismuth Thin Films," Nano Letters, vol. 16, no. 11, pp. 6931-6938, Oct 2016. Digital object identifier
  16. R. Kudrawiec, P. Poloczek, J. Misiewicz, H. P. Bae, T. Sarmiento, S. R. Bank, H. B. Yuen, M. A. Wistey, and J. S. Harris, "Contactless electroreflectance of GaInNAsSb/GaNAs/GaAs quantum wells emitting at 1. 5\—1. 65 \µm: Broadening of the fundamental transition," APL, vol. 94, no. 3, pp. 031903, Jan 2009. Digital object identifier
  17. R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, and J. Misiewicz, "On the Fermi level pinning in as-grown GaInNAs(Sb)/GaAs quantum wells with indium content of 8%\—32%," J. Appl. Phys., vol. 104, no. 3, pp. 033526, Aug 2008. Digital object identifier
  18. Y. Xin, .C . Y. Lin, Y. Li, H. P. Bae, H. B. Yuen, M. A. Wistey, J. S. Harris, S. R. Bank, and L. F. Lester, "Monolithic 1. 55 \µm GaInNAsSb quantum well passively modelocked lasers," Electron. Lett., vol. 44, no. 9, pp. 581-582, Apr 2008. Digital object identifier
  19. R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, and J. Misiewicz, "Contactless electroreflectance approach to study the Fermi level position in GaInNAs/GaAs quantum wells," J. Appl. Phys., vol. 102, no. 11, pp. 113501, Dec 2007. Digital object identifier
  20. S. R. Bank, H. P. Bae, L. L. Goddard, H. B. Yuen, M. A. Wistey, R. Kudrawiec, and J. S. Harris, "Recent Progress on 1. 55-\µm Dilute-Nitride Lasers," IEEE J. Quantum Electron., vol. 43, no. 9, pp. 773-785, Sep 2007. Digital object identifier
  21. J. S. Harris, R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, D. B. Jackrel, E. R. Pickett, T. Sarmiento, L. L. Goddard, V. Lordi, and T. Gugov, "Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications," Physica Status Solidi (b), vol. 244, no. 8, pp. 2707-2729, Jul 2007. Digital object identifier
  22. H. P. Bae, S. R. Bank, H. B. Yuen, T. Sarmiento, E. R. Pickett, M. A. Wistey, and J. S. Harris, "Temperature dependencies of annealing behaviors of GaInNAsSb/GaNAs quantum wells for long wavelength dilute-nitride lasers," APL, vol. 90, no. 23, pp. 231119, Jun 2007. Digital object identifier
  23. R. Kudrawiec, S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, L. L. Goddard, J. S. Harris, M. Gladysiewicz, M. Motyka, and J. Misiewicz, "Conduction band offset for Ga0. 62In0. 38NxAs0. 991 - xSb0. 009/GaNyAs1 - y/GaAs systems with the ground state transition at 1. 5-1. 65 \µm," APL, vol. 90, no. 13, pp. 131905, Mar 2007. Digital object identifier
  24. R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, and J. Misiewicz, "Fermi level shift in GaInNAsSb/GaAs quantum wells upon annealing studied by contactless electroreflectance," APL, vol. 90, no. 6, pp. 061902, Feb 2007. Digital object identifier
  25. R. Kudrawiec, H. B. Yuen, M. Motyka, M. Gladysiewicz, J. Misiewicz, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "Contactless electroreflectance of GaInNAsSb∕GaAs single quantum wells with indium content of 8%–32%," J. of Appl. Phys., vol. 101, no. 1, pp. 013504, Jan 2007. Digital object identifier
  26. S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, A. Moto, and J. S. Harris, "Enhanced luminescence in GaInNAsSb quantum wells through variation of the arsenic and antimony fluxes," APL, vol. 88, no. 24, pp. 241923, Jun 2006. Digital object identifier
  27. R. Kudrawiec, M. Gladysiewicz, J. Misiewicz, H. B. Yuen, S. R. Bank, M. A. Wistey, H. P. Bae, and J. S. Harris, "Interband transitions in GaN0. 02As0. 98-xSbx/GaAs (0<x<0. 11) single quantum wells studied by contactless electroreflectance spectroscopy," Phys. Rev. B, vol. 73, pp. 245413, Jun 2006. Digital object identifier
  28. S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, and J. S. Harris, "Overannealing effects in GaInNAs(Sb) alloys and their importance to laser applications," APL, vol. 88, no. 22, pp. 221115, Dec 2006. Digital object identifier
  29. H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "Effects of strain on the optimal annealing temperature of GaInNAsSb quantum wells," APL, vol. 88, no. 22, pp. 221913, May 2006. Digital object identifier
  30. R. Kudrawiec, M. Motyka, M. Gladysiewicz, J. Misiewicz, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "Band gap discontinuity in Ga0. 9In0. 1N0. 027As0. 973 - xSbx/GaAs single quantum wells with 0 ≤ x < 0. 06 studied by contactless electroreflectance spectroscopy," APL, vol. 88, no. 22, pp. 221113, May 2006. Digital object identifier
  31. M. A. Wistey, S. R. Bank, H. P. Bae, H. B. Yuen, E. R. Pickett, L. L. Goddard, and J. S. Harris, "GaInNAsSb/GaAs vertical cavity surface emitting lasers at 1534 nm," Electron. Lett., vol. 42, no. 5, pp. 282-283, Mar 2006. Digital object identifier
  32. S. R. Bank, H. P. Bae, H. B. Yuen, M. A. Wistey, L. L. Goddard, and J. S. Harris, "Room-temperature continuous-wave 1. 55 \µm GaInNAsSb laser on GaAs," Electron. Lett., vol. 42, no. 3, pp. 156-157, Feb 2006. Digital object identifier
  33. H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "The role of antimony on properties of widely varying GaInNAsSb compositions," J. Appl. Phys., vol. 99, no. 9, pp. 093504, Dec 2006. Digital object identifier
  34. S. R. Bank, H. B. Yuen, M. A. Wistey, V. Lordi, H. P. Bae, and J. S. Harris, "Effects of growth temperature on the structural and optical properties of 1. 55 \µm GaInNAsSb quantum wells grown on GaAs," APL, vol. 87, no. 2, pp. 021908, Jul 2005. Digital object identifier
  35. S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, H. P. Bae, and J. S. Harris, "Molecular-beam epitaxy growth of low-threshold cw GaInNAsSb lasers at 1. 5 \µm," J. Vac. Sci. Technol. B, vol. 23, no. 3, pp. 1337-1340, Jun 2005. Digital object identifier
  36. M. A. Wistey, S. R. Bank, H. B. Yuen, H. P. Bae, and J. S. Harris, "Nitrogen plasma optimization for high-quality dilute nitrides," J. Cryst. Growth, vol. 278, no. 1-4, pp. 229-233, May 2005. Digital object identifier
  37. R. Kudrawiec, K. Ryczko, J. Misiewicz, H. B. Yuen, S. R. Bank, M. A. Wistey, H. P. Bae, and J. S. Harris, "Band-gap discontinuity in GaN0. 02As0. 87Sb0. 11/GaAs single-quantum wells investigated by photoreflectance spectroscopy," APL, vol. 86, no. 14, pp. 141908, Mar 2005. Digital object identifier
  38. R. Kudrawiec, H. B. Yuen, K. Ryczko, J. Misiewicz, S. R. Bank, M. A. Wistey, H. P. Bae, and J. S. Harris, "Photoreflectance and photoluminescence investigations of a step-like GaInNAsSb/GaAsN/GaAs quantum well tailored at 1. 5 \µm: The energy level structure and the Stokes shift," J. Appl. Phys., vol. 97, no. 5, pp. 053515, Feb 2005. Digital object identifier
  39. H. B. Yuen, M. A. Wistey, S. R. Bank, H. P. Bae, and J. S. Harris, "Investigation of nitrogen flow variation into a radio frequency plasma cell on plasma properties and GaInNAs grown by molecular beam epitaxy," J. Vac. Sci. Technol. B, vol. 23, no. 3, pp. 1328-1332, Dec 2005. Digital object identifier
  40. S. R. Bank, M. A. Wistey, L. L. Goddard, H. B. Yuen, H. P. Bae, and J. S. Harris, "High-performance 1. 5 \µm GaInNAsSb lasers grown on GaAs," Electron. Lett., vol. 40, no. 19, pp. 1186-1187, Sep 2004. Digital object identifier

Conference Paper

  1. J. A. McArthur, A. A. Dadey, S. D. March, A. H. Jones, X. Xue, J. C. Campbell, and S. R. Bank, "The Cascaded Multiplier Avalanche Photodiode," 80th Device Research Conf. (DRC), Columbus, OH, Jun 2022.
  2. R. Wang, D. Chen, J. A. McArthur, X. Xue, S. R. Bank, and J. C. Campbell, "AlxIn1-xAsySb1-y digital alloy nBn photodetectors," 2021 IEEE Photonics Conference (IPC), Vancouver, BC, Canada, Oct 2021.
  3. A. A. Dadey, S. D. March, X. Xue, S. R. Bank, and J. C. Campbell, "Cryogenic Noise of Staircase Avalanche Photodiodes," 2021 IEEE Photonics Conference (IPC), Vancouver, BC, Canada, Oct 2021.
  4. R. H. El-Jaroudi, A. H. Jones, A. A. Dadey, B. Guo, X. Xue, J. C. Campbell, and S. R. Bank, "Growth of B-III-V alloys for GaAs-based optoelectronic devices," 62nd Electronic Materials Conf. (EMC), Virtual, Jun 2021.
  5. R. H. El-Jaroudi, A. A. Dadey, X. Xue, A. H. Jones, B. Guo, J. C. Campbell, and S. R. Bank, "Reducing III-V avalanche photodiode noise through the introduction of boron," 79th Device Research Conf. (DRC), Virtual, Jun 2021.
  6. (Invited) S. R. Bank, X. Xue, S. D. March, Y. Yuan, A. H. Jones, A. K. Rockwell, and J. C. Campbell, "Towards Single Photon Counting at Room Temperature with Digital Alloy Avalanche Photodiodes," IEEE Research and Applications of Photonics in Defense (RAPID), Miramar Beach, FL, Aug 2020.
  7. A. K. Rockwell, A. H. Jones, Y. Yuan, X. Xue, S. D. March, J. C. Campbell, and S. R. Bank, "Temperature Stability of III-V Digital Alloy Bandgaps," 62nd Electronic Materials Conf. (EMC), Columbus, OH, Jun 2020.
  8. N. Roschewsky, E. S. Walker, P. Gowtham, S. E. Muschinske, F. Hellman, S. R. Bank, and S. Salahuddin, "Spin-orbit torque and Nernst effects in Bi-Sb/ferromagnet heterostructures," American Physical Society March Meeting (APS), Boston, MA, Mar 2019.
  9. S. E. Muschinske, E. S. Walker, C. J. Brennan, Y. Sun, A. Yau, T. Trivedi, A. Roy, S. D. March, A. F. Briggs, E. M. Krivoy, D. Akinwande, M. L. Lee, E. T. Yu, and S. R. Bank, "Epitaxial Growth and Characterization of 2-D BixSb1-x Alloys on Si(111)," 60th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2018.
  10. E. S. Walker, S. Ryul. Na, Y. Sun, C. J. Brennan, F. He, R. H. Roberts, N. Yoon, S. E. Muschinske, S. D. March, A. F. Briggs, D. Wasserman, D. Akinwande, Y. Wang, E. T. Yu, M. L. Lee, K. M. Liechti, and S. R. Bank, "Epitaxial Growth and Transfer of Bismuth and Bismuth Antimonide Thin Films," SRC TECHCON, Austin, TX, Sep 2017.