Publications

Displaying 124 publications
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Journal Article

  1. H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, M. Seong, S. Yoon, R. Kudrawiec, and J. Misiewicz, "Improved optical quality of GaNAsSb in the dilute Sb limit," J. Appl. Phys., vol. 97, no. 11, pp. 113510, Dec 2005. Digital object identifier
  2. D. Gollub, M. Kamp, A. Forchel, J. Seufert, S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, and J. S. Harris, "Continuous-wave operation of GaInNAsSb distributed feedback lasers at 1. 5 \µm," Electron. Lett., vol. 40, no. 23, pp. 1487-1488, Nov 2004. Digital object identifier
  3. J. S. Harris, S. R. Bank, M. A. Wistey, and H. B. Yuen, "GaInNAs(Sb) long wavelength communications lasers," IEE Proc. Optoelectron., vol. 151, no. 5, pp. 407-416, Oct 2004. Digital object identifier
  4. S. R. Bank, M. A. Wistey, L. L. Goddard, H. B. Yuen, H. P. Bae, and J. S. Harris, "High-performance 1. 5 \µm GaInNAsSb lasers grown on GaAs," Electron. Lett., vol. 40, no. 19, pp. 1186-1187, Sep 2004. Digital object identifier
  5. V. Lordi, H. B. Yuen, S. R. Bank, and J. S. Harris, "Quantum-confined Stark effect of GaInNAs(Sb) quantum wells at 1300\—1600 nm," APL, vol. 85, no. 6, pp. 902-904, Aug 2004. Digital object identifier
  6. S. R. Bank, M. A. Wistey, L. L. Goddard, H. B. Yuen, V. Lordi, and J. S. Harris, "Low-threshold continuous-wave 1. 5-\µm GaInNAsSb lasers grown on GaAs," IEEE J. Quantum Electron., vol. 40, no. 6, pp. 656-664, Jun 2004. Digital object identifier
  7. T. Gugov, V. Gambin, M. A. Wistey, H. B. Yuen, S. R. Bank, and J. S. Harris, "Use of transmission electron microscopy in the characterization of GaInNAs(Sb) quantum well structures grown by molecular beam epitaxy," J. Vac. Sci. Technol. B, vol. 22, no. 3, pp. 1588-1592, May 2004. Digital object identifier
  8. J. Fu, S. R. Bank, M. A. Wistey, H. B. Yuen, and J. S. Harris, "Solid-source molecular-beam epitaxy growth of GaInNAsSb/InGaAs single quantum well on InP with photoluminescence peak wavelength at 2. 04 \µm," J. Vac. Sci. Technol. B, vol. 22, no. 3, pp. 1463-1467, May 2004. Digital object identifier
  9. M. A. Wistey, S. R. Bank, H. B. Yuen, L. L. Goddard, and J. S. Harris, "GaInNAs(Sb) vertical-cavity surface-emitting lasers at 1. 460 \µm," J. Vac. Sci. Technol. B, vol. 22, no. 3, pp. 1562-1564, May 2004. Digital object identifier
  10. H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, and A. Moto, "Comparison of GaNAsSb and GaNAs as quantum-well barriers for GaInNAsSb optoelectronic devices operating at 1. 3\—1. 55 \µm," J. Appl. Phys., vol. 96, no. 11, pp. 6375-6381, Dec 2004. Digital object identifier
  11. M. A. Wistey, S. R. Bank, H. B. Yuen, L. L. Goddard, and J. S. Harris, "Monolithic, GaInNAsSb VCSELs at 1. 46 \µm on GaAs by MBE," Electron. Lett., vol. 39, no. 25, pp. 1822-1823, Dec 2003. Digital object identifier
  12. S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, W. Ha, and J. S. Harris, "Low-threshold CW GaInNAsSb/GaAs laser at 1. 49 \µm," Electron. Lett., vol. 39, no. 20, pp. 1445-1446, Oct 2003. Digital object identifier
  13. S. R. Bank, W. Ha, V. Gambin, M. A. Wistey, H. B. Yuen, L. L. Goddard, S. Kim, and J. S. Harris, "1. 5 \µm GaInNAs(Sb) lasers grown on GaAs by MBE," J. Cryst. Growth, vol. 251, no. 1-4, pp. 367-371, Apr 2003. Digital object identifier
  14. K. Volz, V. Gambin, W. Ha, M. A. Wistey, H. B. Yuen, S. R. Bank, and J. S. Harris, "The role of Sb in the MBE growth of (GaIn)(NAsSb)," J. Cryst. Growth, vol. 251, no. 1-4, pp. 360-366, Apr 2003. Digital object identifier
  15. V. Gambin, H. Wonill, M. A. Wistey, H. B. Yuen, S. R. Bank, S. M. Kim, and J. S. Harris, "GaInNAsSb for 1. 3\—1. 6 \µm-long wavelength lasers grown by molecular beam epitaxy," IEEE J. Sel. Topics Quantum Electron., vol. 8, no. 4, pp. 795-800, Jul 2002. Digital object identifier
  16. W. Ha, V. Gambin, M. A. Wistey, S. R. Bank, H. B. Yuen, S. Kim, and J. S. Harris, "Long wavelength GaInNAsSb/GaNAsSb multiple quantum well lasers," Electron. Lett., vol. 38, no. 6, pp. 277-278, Mar 2002. Digital object identifier

Conference Paper

  1. J. A. McArthur, A. A. Dadey, E. Y. Wang, H. Karimi, J. C. Campbell, and S. R. Bank, "Suppressing AlInAsSb Avalanche Photodiode Dark Currents by Tuning the Absorption Region," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  2. E. Y. Wang, J. A. McArthur, H. Karimi, P. Devaney, J. C. Campbell, and S. R. Bank, "Effect of Varying Period Structure on Tunneling Current in AlInAsSb Digital Alloys," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  3. E. Y. Wang, J. A. McArthur, A. A. Dadey, M. Fetters, A. W. K. Liu, J. M. Fastenau, J. C. Campbell, and S. R. Bank, "Growth and characterization of Alx In1-x Asy Sb1-y digital alloys on InP on Si," 65th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2023.
  4. S. P. Mallick, E. Y. Wang, J. A. McArthur, C. Du, S. D. March, X. Pan, and S. R. Bank, "The effect of group-V "Blow-by" on the structural and optical properties of Alx In1-x Asy Sb1-y digital alloys grown by molecular beam epitaxy," 65th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2023.
  5. J. A. McArthur, H. Karimi, L. Sauer, J. C. Campbell, and S. R. Bank, "Manipulating the opto-electronic properties of AlInAsSb digital alloys by adjusting the period thickness," 65th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2023.
  6. A. A. Dadey, J. A. McArthur, S. R. Bank, and J. C. Campbell, "Separate Absorption, Charge, and, Multiplication Avalanche Photodiode with a Digital Alloy Al0. 05In0. 95As0. 93Sb0. 07 Absorber for Mid-IR Detection," 2022 IEEE Photonics Conferennce (IPC), Vancouver, BC, Canada, Nov 2022.
  7. J. A. McArthur, A. A. Dadey, S. D. March, A. H. Jones, X. Xue, J. C. Campbell, and S. R. Bank, "The Cascaded Multiplier Avalanche Photodiode," 80th Device Research Conf. (DRC), Columbus, OH, Jun 2022.
  8. E. Y. Wang, J. A. McArthur, A. K. Rockwell, and S. R. Bank, "Growth and characterization of AlxIn1-xAsySb1-y digital alloys grown on InP," 64th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2022.
  9. R. Wang, D. Chen, J. A. McArthur, X. Xue, S. R. Bank, and J. C. Campbell, "AlxIn1-xAsySb1-y digital alloy nBn photodetectors," 2021 IEEE Photonics Conference (IPC), Vancouver, BC, Canada, Oct 2021.
  10. J. A. McArthur, S. D. March, D. Chen, A. A. Dadey, A. H. Jones, J. C. Campbell, and S. R. Bank, "Background Carrier Polarity Switching in AlInAsSb Digital Alloys," 63nd Electronic Materials Conf. (EMC), Virtual, Jun 2021.
  11. N. D. Foster, A. K. Rockwell, J. A. McArthur, M. Santoyo, S. R. Bank, and M. C. Downer, "Measurement of chi(2) of III-V quantum well structures," Bulletin of the American Physical Society, Mar 2021.
  12. J. A. McArthur, S. D. March, A. K. Rockwell, A. F. Briggs, and S. R. Bank, "Characterizing the Optical and Electrical Properties of AlxIn1-xAsySb1-y Digital Alloys," 62nd Electronic Materials Conf. (EMC), Columbus, OH, Jun 2020.
  13. R. H. El-Jaroudi, K. M. McNicholas, B. A. Bouslog, I. E. Olivares, R. C. White, J. A. McArthur, and S. R. Bank, "Boron Alloys for GaAs-based 1. 3μm Semiconductor Lasers," Conf. on Lasers and Electro Optics (CLEO), San Jose, CA, May 2019.
  14. A. M. Mintairov, K. Sun, J. L. Merz, H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, G. Peake, A. Egorov, V. Ustinov, R. Kudrawiec, and J. Misiewicz, "Atomic arrangement and emission properties of GaAs(In,Sb)N dilute nitride quantum wells," 13th Advanced Hereostructures and Nanostructures Workshop (AHNW), Jun 2008.
  15. Y. Lin, L. F. Lester, S. R. Bank, H. P. Bae, H. B. Yuen, M. A. Wistey, and J. S. Harris, "Monolithic 1. 55-µm GaInNAsSb Quantum Well Mode-Locked Lasers," Conf. on Lasers and Electro Optics (CLEO), Baltimore, MD, May 2007.
  16. E. R. Pickett, S. R. Bank, H. B. Yuen, H. P. Bae, T. Sarmiento, A. Marshall, and J. S. Harris, "Thermally Induced Relaxation in GaInNAsSb Quantum Well Structures," Materials Research Symposium (MRS), San Francisco, CA, Apr 2007.
  17. S. R. Bank, H. P. Bae, H. B. Yuen, E. R. Pickett, M. A. Wistey, and J. S. Harris, "Strong Luminescence Enhancement in GaInNAsSb Quantum Wells Through Variation of the Group-V Fluxes," 48th Electronic Materials Conf. (EMC), University Park, PA, Jun 2006.
  18. S. R. Bank, H. P. Bae, L. L. Goddard, H. B. Yuen, M. A. Wistey, and J. S. Harris, "Very Low-Threshold 1. 55-\µm Dilute-Nitride Lasers," 64th Device Research Conf. (DRC), Jun 2006.
  19. E. R. Pickett, S. R. Bank, H. B. Yuen, H. P. Bae, and J. S. Harris, "TEM Analysis of Growth and Annealing Temperature Effects on GaInNAsSb Quantum Wells," 48th Electronic Materials Conf. (EMC), University Park, PA, Jun 2006.
  20. H. P. Bae, S. R. Bank, H. B. Yuen, E. R. Pickett, M. A. Wistey, and J. S. Harris, "Analysis of Relative Speed and Temperature Dependence of Constituent Processes in the Annealing of GaInNAs(Sb)," 48th Electronic Materials Conf. (EMC), University Park, PA, Jun 2006.
  21. S. R. Bank, H. P. Bae, H. B. Yuen, M. A. Wistey, L. L. Goddard, J. S. Harris, R. Kudrawiec, M. Gladysiewicz, M. Motyka, and J. Misiewicz, "Low-Threshold Continuous-Wave 1. 55-\µm GaInNAsSb lasers," Conf. on Lasers and Electro Optics (CLEO), Long Beach, CA, May 2006.
  22. S. R. Bank, H. P. Bae, H. B. Yuen, L. L. Goddard, M. A. Wistey, T. Sarmiento, and J. S. Harris, "Low-Threshold CW 1. 55-\µm GaAs-Based Lasers," Optical Fiber Communication Conf. (OFC), Anaheim, CA, Mar 2006.
  23. S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, and J. S. Harris, "MBE Growth of High-Efficiency GaInNAsSb Quantum Wells from 1. 45 - 1. 55 \µm," North American Molecular Beam Epitaxy Conf. (NAMBE), Keystone, Colorado, Sep 2005.
  24. S. R. Bank, H. B. Yuen, M. A. Wistey, V. Lordi, H. P. Bae, and J. S. Harris, "Effects of Growth Temperature on the Optical Behavior of GaInNAsSb Alloys," 47th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2005.
  25. S. R. Bank, M. A. Wistey, L. L. Goddard, H. B. Yuen, H. P. Bae, and J. S. Harris, "1. 55 \µm GaInNAsSb Lasers on GaAs," Conf. on Lasers and Electro-Optics (CLEO), Baltimore, MD, May 2005.
  26. L. L. Goddard, S. R. Bank, M. A. Wistey, H. B. Yuen, H. P. Bae, and J. S. Harris, "Differential Gain and Nonlinear Gain Compression of GaInNAsSb/GaAs Lasers at 1. 5 \µm," Conf. on Lasers and ElectroOptics (CLEO), Baltimore, MD, May 2005.
  27. S. R. Bank, M. A. Wistey, H. B. Yuen, H. P. Bae, L. L. Goddard, and J. S. Harris, "Defect Modification in GaInNAsSb Growth with Insertion of GaAs Prelayers," Materials Research Symposium (MRS), San Francisco, CA, Apr 2005.
  28. L. L. Goddard, S. R. Bank, M. A. Wistey, H. B. Yuen, and J. S. Harris, "High performance GaInNAsSb/GaAs lasers at 1. 5 \µm," SPIE Photonics West, San Jose, CA, Jan 2005.
  29. H. B. Yuen, M. Seong, S. Yoon, R. Kudrawiec, S. R. Bank, M. A. Wistey, J. Misiewicz, A. Mascarenhas, and J. S. Harris, "Improved Optical Quality from Indium-Free GaNAsSb in the Dilute Sb (<3%) Limit," Materials Research Symposium (MRS), Boston, MA, Dec 2004.
  30. M. A. Wistey, S. R. Bank, H. B. Yuen, T. Gugov, and J. S. Harris, "Protecting Wafer Surface During GaInNAs Plasma Ignition by Use of an Arsenic Cap," North American Molecular Beam Epitaxy Conf. (NAMBE), Banff, Alberta, Canada, Oct 2004.
  31. S. R. Bank, M. A. Wistey, H. B. Yuen, V. Lordi, V. Gambin, and J. S. Harris, "Effects of Antimony and Ion Damage on Carrier Localization in MBE-Grown GaInNAs," North American Molecular Beam Epitaxy Conf. (NAMBE), Banff, Alberta, Canada, Oct 2004.
  32. S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, H. P. Bae, and J. S. Harris, "MBE Growth of Low Threshold CW GaInNAsSb Lasers at 1. 5 \µm," North American Molecular Beam Epitaxy Conf. (NAMBE), Banff, Alberta, Canada, Oct 2004.
  33. H. B. Yuen, M. A. Wistey, S. R. Bank, H. P. Bae, and J. S. Harris, "Effects of N2 Flow into a RF Plasma Cell on GaInNAs Grown by MBE," North American Molecular Beam Epitaxy Conf. (NAMBE), Bannf, Alberta, Canada, Oct 2004.
  34. T. Gugov, V. Gambin, M. A. Wistey, H. B. Yuen, S. R. Bank, and J. S. Harris, "TEM Structural Characterization of GaInNAs and GaInNAsSb Quantum Wells Grown by Molecular Beam Epitaxy," 46th Electronic Materials Conf. (EMC), Notre Dame, IN, Jun 2004.