Publications

Displaying 116 publications
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Journal Article

  1. H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, and A. Moto, "Comparison of GaNAsSb and GaNAs as quantum-well barriers for GaInNAsSb optoelectronic devices operating at 1. 3\—1. 55 \µm," J. Appl. Phys., vol. 96, no. 11, pp. 6375-6381, Dec 2004. Digital object identifier
  2. M. A. Wistey, S. R. Bank, H. B. Yuen, L. L. Goddard, and J. S. Harris, "Monolithic, GaInNAsSb VCSELs at 1. 46 \µm on GaAs by MBE," Electron. Lett., vol. 39, no. 25, pp. 1822-1823, Dec 2003. Digital object identifier
  3. S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, W. Ha, and J. S. Harris, "Low-threshold CW GaInNAsSb/GaAs laser at 1. 49 \µm," Electron. Lett., vol. 39, no. 20, pp. 1445-1446, Oct 2003. Digital object identifier
  4. S. R. Bank, W. Ha, V. Gambin, M. A. Wistey, H. B. Yuen, L. L. Goddard, S. Kim, and J. S. Harris, "1. 5 \µm GaInNAs(Sb) lasers grown on GaAs by MBE," J. Cryst. Growth, vol. 251, no. 1-4, pp. 367-371, Apr 2003. Digital object identifier
  5. K. Volz, V. Gambin, W. Ha, M. A. Wistey, H. B. Yuen, S. R. Bank, and J. S. Harris, "The role of Sb in the MBE growth of (GaIn)(NAsSb)," J. Cryst. Growth, vol. 251, no. 1-4, pp. 360-366, Apr 2003. Digital object identifier
  6. V. Gambin, H. Wonill, M. A. Wistey, H. B. Yuen, S. R. Bank, S. M. Kim, and J. S. Harris, "GaInNAsSb for 1. 3\—1. 6 \µm-long wavelength lasers grown by molecular beam epitaxy," IEEE J. Sel. Topics Quantum Electron., vol. 8, no. 4, pp. 795-800, Jul 2002. Digital object identifier
  7. W. Ha, V. Gambin, M. A. Wistey, S. R. Bank, H. B. Yuen, S. Kim, and J. S. Harris, "Long wavelength GaInNAsSb/GaNAsSb multiple quantum well lasers," Electron. Lett., vol. 38, no. 6, pp. 277-278, Mar 2002. Digital object identifier

Conference Paper

  1. Q. Meng, R. H. El-Jaroudi, R. C. White, H. S. Maczko, T. Dey, R. Kudrawiec, S. R. Bank, and M. A. Wistey, "Bandgap Evolution in B-III-V Alloys," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  2. Q. Meng, R. C. White, R. H. El-Jaroudi, T. Dey, L. Gelczuk, R. Kudrawiec, S. R. Bank, and M. A. Wistey, "Improvement in Optical Quality Upon Annealing in B-III-V Alloys," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  3. K. C. Wen, P. Devaney, R. Ramesh, A. F. Ricks, Q. Meng, Z. Sakotic, D. Wasserman, J. B. Khurgin, and S. R. Bank, "Semiconductor Quantum Well Structures with Large Third-order Interband Optical Nonlinearities," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  4. T. Dey, A. W. Arbogast, Q. Meng, M. Reaz. Munna, K. Alam, S. R. Bank, and M. A. Wistey, "Influences of Carbon Tetrabromide (CBr4) and Tin Fluxes on GeCSn Growth," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  5. A. F. Ricks, R. C. White, Q. Meng, H. Hijazi, M. A. Wistey, and S. R. Bank, "Bismuth Incorporation in AlInSb for an Improved Barrier Layer Material," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  6. A. F. Ricks, R. C. White, Q. Meng, M. K. Bergthold, M. A. Wistey, D. Wasserman, and S. R. Bank, "Bismuth Incorporation in AlInSb for Wide-Bandgap Barriers on InSb," 65th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2023.
  7. R. Ramesh, T. Hsieh, A. M. Skipper, Q. Meng, K. C. Wen, M. A. Wistey, F. Shafiei, M. W. Downer, J. B. Khurgin, and S. R. Bank, "Engineering of the Interband Second Order Optical Nonlinearity with Asymmetric Coupled Quantum Wells," 65th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2023.
  8. Q. Meng, R. C. White, R. H. El-Jaroudi, T. Dey, S. R. Bank, and M. A. Wistey, "Atom Rearrangement in BGa(In)As Alloys Under Annealing," 65th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2023.
  9. A. F. Ricks, R. C. White, Q. Meng, M. K. Bergthold, M. A. Wistey, and S. R. Bank, "Growth and characterization of AlInSbBi for wide-bandgap barriers on InSb," 64th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2022.
  10. R. C. White, Q. Meng, M. Lopez, A. Ponnekanti, L. J. Nordin, A. J. Muhowski, D. Wasserman, S. R. Bank, and M. A. Wistey, "Growth and Characterization of InSbBi: A (Potentially) Not So Highly Mismatched Alloy for Wavelength Extension on InSb," 21st International Conference on Molecular Beam Epitaxy (ICMBE), Virtual, Sep 2021.
  11. Q. Meng, R. H. El-Jaroudi, R. C. White, T. Dey, M. Shamim. Reza, S. R. Bank, and M. A. Wistey, "Effect of B Distribution on the Band Structure of BGa(In)As Alloys," 63nd Electronic Materials Conf. (EMC), Virtual, Jun 2021.
  12. R. H. El-Jaroudi, K. M. McNicholas, P. Dhingra, R. C. White, Q. Meng, M. A. Wistey, M. L. Lee, and S. R. Bank, "B-III-V/GaAs quantum wells: towards 1. 55 \&microm emitters on GaAs," 62nd Electronic Materials Conf. (EMC), Columbus, OH, Jun 2020.
  13. R. C. White, R. H. El-Jaroudi, Q. Meng, P. Dhingra, M. L. Lee, S. R. Bank, and M. A. Wistey, "Mechanism for Blueshift with Annealing in Near-Infrared B-III-V Alloys on GaAs," 62nd Electronic Materials Conf. (EMC), Columbus, OH, Jun 2020.
  14. Q. Meng, R. H. El-Jaroudi, I. A. Gulyas, R. C. White, K. M. McNicholas, T. Dey, S. R. Bank, and M. A. Wistey, "Effect of B-In interactions on the band structure and optical properties of BGa(In)As," 62nd Electronic Materials Conf. (EMC), Columbus, OH, Jun 2020.
  15. A. M. Mintairov, K. Sun, J. L. Merz, H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, G. Peake, A. Egorov, V. Ustinov, R. Kudrawiec, and J. Misiewicz, "Atomic arrangement and emission properties of GaAs(In,Sb)N dilute nitride quantum wells," 13th Advanced Hereostructures and Nanostructures Workshop (AHNW), Jun 2008.
  16. Y. Lin, L. F. Lester, S. R. Bank, H. P. Bae, H. B. Yuen, M. A. Wistey, and J. S. Harris, "Monolithic 1. 55-µm GaInNAsSb Quantum Well Mode-Locked Lasers," Conf. on Lasers and Electro Optics (CLEO), Baltimore, MD, May 2007.
  17. E. R. Pickett, S. R. Bank, H. B. Yuen, H. P. Bae, T. Sarmiento, A. Marshall, and J. S. Harris, "Thermally Induced Relaxation in GaInNAsSb Quantum Well Structures," Materials Research Symposium (MRS), San Francisco, CA, Apr 2007.
  18. H. P. Bae, S. R. Bank, H. B. Yuen, E. R. Pickett, M. A. Wistey, and J. S. Harris, "Analysis of Relative Speed and Temperature Dependence of Constituent Processes in the Annealing of GaInNAs(Sb)," 48th Electronic Materials Conf. (EMC), University Park, PA, Jun 2006.
  19. S. R. Bank, H. P. Bae, H. B. Yuen, E. R. Pickett, M. A. Wistey, and J. S. Harris, "Strong Luminescence Enhancement in GaInNAsSb Quantum Wells Through Variation of the Group-V Fluxes," 48th Electronic Materials Conf. (EMC), University Park, PA, Jun 2006.
  20. S. R. Bank, H. P. Bae, L. L. Goddard, H. B. Yuen, M. A. Wistey, and J. S. Harris, "Very Low-Threshold 1. 55-\µm Dilute-Nitride Lasers," 64th Device Research Conf. (DRC), Jun 2006.
  21. E. R. Pickett, S. R. Bank, H. B. Yuen, H. P. Bae, and J. S. Harris, "TEM Analysis of Growth and Annealing Temperature Effects on GaInNAsSb Quantum Wells," 48th Electronic Materials Conf. (EMC), University Park, PA, Jun 2006.
  22. S. R. Bank, H. P. Bae, H. B. Yuen, M. A. Wistey, L. L. Goddard, J. S. Harris, R. Kudrawiec, M. Gladysiewicz, M. Motyka, and J. Misiewicz, "Low-Threshold Continuous-Wave 1. 55-\µm GaInNAsSb lasers," Conf. on Lasers and Electro Optics (CLEO), Long Beach, CA, May 2006.
  23. S. R. Bank, H. P. Bae, H. B. Yuen, L. L. Goddard, M. A. Wistey, T. Sarmiento, and J. S. Harris, "Low-Threshold CW 1. 55-\µm GaAs-Based Lasers," Optical Fiber Communication Conf. (OFC), Anaheim, CA, Mar 2006.
  24. S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, and J. S. Harris, "MBE Growth of High-Efficiency GaInNAsSb Quantum Wells from 1. 45 - 1. 55 \µm," North American Molecular Beam Epitaxy Conf. (NAMBE), Keystone, Colorado, Sep 2005.
  25. S. R. Bank, H. B. Yuen, M. A. Wistey, V. Lordi, H. P. Bae, and J. S. Harris, "Effects of Growth Temperature on the Optical Behavior of GaInNAsSb Alloys," 47th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2005.
  26. L. L. Goddard, S. R. Bank, M. A. Wistey, H. B. Yuen, H. P. Bae, and J. S. Harris, "Differential Gain and Nonlinear Gain Compression of GaInNAsSb/GaAs Lasers at 1. 5 \µm," Conf. on Lasers and ElectroOptics (CLEO), Baltimore, MD, May 2005.
  27. S. R. Bank, M. A. Wistey, L. L. Goddard, H. B. Yuen, H. P. Bae, and J. S. Harris, "1. 55 \µm GaInNAsSb Lasers on GaAs," Conf. on Lasers and Electro-Optics (CLEO), Baltimore, MD, May 2005.
  28. S. R. Bank, M. A. Wistey, H. B. Yuen, H. P. Bae, L. L. Goddard, and J. S. Harris, "Defect Modification in GaInNAsSb Growth with Insertion of GaAs Prelayers," Materials Research Symposium (MRS), San Francisco, CA, Apr 2005.
  29. L. L. Goddard, S. R. Bank, M. A. Wistey, H. B. Yuen, and J. S. Harris, "High performance GaInNAsSb/GaAs lasers at 1. 5 \µm," SPIE Photonics West, San Jose, CA, Jan 2005.
  30. H. B. Yuen, M. Seong, S. Yoon, R. Kudrawiec, S. R. Bank, M. A. Wistey, J. Misiewicz, A. Mascarenhas, and J. S. Harris, "Improved Optical Quality from Indium-Free GaNAsSb in the Dilute Sb (<3%) Limit," Materials Research Symposium (MRS), Boston, MA, Dec 2004.
  31. H. B. Yuen, M. A. Wistey, S. R. Bank, H. P. Bae, and J. S. Harris, "Effects of N2 Flow into a RF Plasma Cell on GaInNAs Grown by MBE," North American Molecular Beam Epitaxy Conf. (NAMBE), Bannf, Alberta, Canada, Oct 2004.
  32. M. A. Wistey, S. R. Bank, H. B. Yuen, T. Gugov, and J. S. Harris, "Protecting Wafer Surface During GaInNAs Plasma Ignition by Use of an Arsenic Cap," North American Molecular Beam Epitaxy Conf. (NAMBE), Banff, Alberta, Canada, Oct 2004.
  33. S. R. Bank, M. A. Wistey, H. B. Yuen, V. Lordi, V. Gambin, and J. S. Harris, "Effects of Antimony and Ion Damage on Carrier Localization in MBE-Grown GaInNAs," North American Molecular Beam Epitaxy Conf. (NAMBE), Banff, Alberta, Canada, Oct 2004.
  34. S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, H. P. Bae, and J. S. Harris, "MBE Growth of Low Threshold CW GaInNAsSb Lasers at 1. 5 \µm," North American Molecular Beam Epitaxy Conf. (NAMBE), Banff, Alberta, Canada, Oct 2004.
  35. S. R. Bank, V. Lordi, M. A. Wistey, H. B. Yuen, and J. S. Harris, "Temperature Dependent Behavior of GaInNAs(Sb) Alloys Grown on GaAs," 46th Electronic Materials Conf. (EMC), Notre Dame, IN, Jun 2004.
  36. T. Gugov, V. Gambin, M. A. Wistey, H. B. Yuen, S. R. Bank, and J. S. Harris, "TEM Structural Characterization of GaInNAs and GaInNAsSb Quantum Wells Grown by Molecular Beam Epitaxy," 46th Electronic Materials Conf. (EMC), Notre Dame, IN, Jun 2004.
  37. V. Lordi, S. R. Bank, H. B. Yuen, M. A. Wistey, and J. S. Harris, "Electroabsorption and Band Edge Optical Properties of GaInNAsSb Quantum Wells Around 1550nm," 46th Electronic Materials Conf. (EMC), Notre Dame, IN, Jun 2004.
  38. M. A. Wistey, S. R. Bank, H. B. Yuen, V. Gambin, and J. S. Harris, "Low-Voltage Deflection Plates Reduce Plasma Damage in MBE Dilute Nitride Growth," 46th Electronic Materials Conf. (EMC), Notre Dame, IN, Jun 2004.
  39. S. R. Bank, M. A. Wistey, L. L. Goddard, H. B. Yuen, and J. S. Harris, "The Role and Suppression of Carrier Leakage in 1. 5 \µm GaInNAsSb/GaAs Lasers," 62nd Device Research Conf. (DRC), Notre Dame, IN, Jun 2004.
  40. V. Lordi, H. B. Yuen, S. R. Bank, M. A. Wistey, and J. S. Harris, "Electroabsorption Properties of GaInNAs(Sb) Quantum Wells at 1300-1600nm," Materials Research Symposium (MRS), San Francisco, CA, May 2004.
  41. S. R. Bank, L. L. Goddard, M. A. Wistey, H. B. Yuen, and J. S. Harris, "The Temperature Sensitivity of 1. 5 \µm GaInNAsSb Lasers on GaAs," Conf. on Lasers and Electro-Optics (CLEO), May 2004.
  42. M. A. Wistey, S. R. Bank, H. B. Yuen, H. P. Bae, and J. S. Harris, "Nitrogen Plasma Optimization for High Quality Dilute Nitrides," International Conf. on Molecular Beam Epitaxy (MBE), May 2004.
  43. L. L. Goddard, S. R. Bank, M. A. Wistey, H. B. Yuen, and J. S. Harris, "Measurements of Intrinsic Properties of High Power CW Single Quantum Well GaInNAsSb/GaAs Lasers at 1. 5 \µm," Conf. on Lasers and Electro-Optics (CLEO), May 2004.