Publications

Displaying 126 publications
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Journal Article

  1. T. Gugov, V. Gambin, M. A. Wistey, H. B. Yuen, S. R. Bank, and J. S. Harris, "Use of transmission electron microscopy in the characterization of GaInNAs(Sb) quantum well structures grown by molecular beam epitaxy," J. Vac. Sci. Technol. B, vol. 22, no. 3, pp. 1588-1592, May 2004. Digital object identifier
  2. H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, and A. Moto, "Comparison of GaNAsSb and GaNAs as quantum-well barriers for GaInNAsSb optoelectronic devices operating at 1. 3\—1. 55 \µm," J. Appl. Phys., vol. 96, no. 11, pp. 6375-6381, Dec 2004. Digital object identifier
  3. M. A. Wistey, S. R. Bank, H. B. Yuen, L. L. Goddard, and J. S. Harris, "Monolithic, GaInNAsSb VCSELs at 1. 46 \µm on GaAs by MBE," Electron. Lett., vol. 39, no. 25, pp. 1822-1823, Dec 2003. Digital object identifier
  4. S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, W. Ha, and J. S. Harris, "Low-threshold CW GaInNAsSb/GaAs laser at 1. 49 \µm," Electron. Lett., vol. 39, no. 20, pp. 1445-1446, Oct 2003. Digital object identifier
  5. S. R. Bank, W. Ha, V. Gambin, M. A. Wistey, H. B. Yuen, L. L. Goddard, S. Kim, and J. S. Harris, "1. 5 \µm GaInNAs(Sb) lasers grown on GaAs by MBE," J. Cryst. Growth, vol. 251, no. 1-4, pp. 367-371, Apr 2003. Digital object identifier
  6. K. Volz, V. Gambin, W. Ha, M. A. Wistey, H. B. Yuen, S. R. Bank, and J. S. Harris, "The role of Sb in the MBE growth of (GaIn)(NAsSb)," J. Cryst. Growth, vol. 251, no. 1-4, pp. 360-366, Apr 2003. Digital object identifier
  7. V. Gambin, H. Wonill, M. A. Wistey, H. B. Yuen, S. R. Bank, S. M. Kim, and J. S. Harris, "GaInNAsSb for 1. 3\—1. 6 \µm-long wavelength lasers grown by molecular beam epitaxy," IEEE J. Sel. Topics Quantum Electron., vol. 8, no. 4, pp. 795-800, Jul 2002. Digital object identifier
  8. W. Ha, V. Gambin, M. A. Wistey, S. R. Bank, H. B. Yuen, S. Kim, and J. S. Harris, "Long wavelength GaInNAsSb/GaNAsSb multiple quantum well lasers," Electron. Lett., vol. 38, no. 6, pp. 277-278, Mar 2002. Digital object identifier

Conference Paper

  1. A. F. Briggs, K. J. Underwood, S. D. Sifferman, J. T. Gopinath, and S. R. Bank, "Comparison of Auger Recombination Across Material Systems with Externally Applied Biaxial Strain," 62nd Electronic Materials Conf. (EMC), Columbus, OH, Jun 2020.
  2. S. D. Sifferman, A. F. Briggs, S. J. Maddox, H. P. Nair, and S. R. Bank, "Highly strained, high indium content III-V materials toward 4-micron type-I emitters," Optical Materials Express, 62nd Electronic Materials Conf. (EMC), Columbus, OH, Jun 2020.
  3. K. J. Underwood, A. F. Briggs, S. D. Sifferman, V. B. Verma, N. S. Sirica, R. P. Prasankumar, S. Woo. Nam, K. L. Silverman, S. R. Bank, and J. T. Gopinath, "Auger Recombination in Strained Mid-Infrared Quantum Wells," Conf. on Lasers and Electro Optics (CLEO), Washington, DC, May 2020.
  4. A. F. Briggs, S. D. Sifferman, K. J. Underwood, J. T. Gopinath, and S. R. Bank, "Externally Applied Strain on GaSb Based InGaAsSb Quantum Well Membranes," 61st Electronic Materials Conf. (EMC), Ann Arbor, MI, Jun 2019.
  5. R. H. El-Jaroudi, N. T. Sheehan, K. M. McNicholas, D. J. Ironside, A. F. Briggs, A. M. Skipper, S. D. Sifferman, and S. R. Bank, "Strain Engineering of Nanomembranes with Amorphous Silicon," 60th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2018.
  6. K. M. McNicholas, D. J. Ironside, R. H. El-Jaroudi, H. S. Maczko, G. Cossio, L. J. Nordin, S. D. Sifferman, R. Kudrawiec, E. T. Yu, D. Wasserman, and S. R. Bank, "BGaAs/GaP heteroepitaxy for strain-free luminescent layers on Si," 60th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2018.
  7. A. K. Rockwell, Y. Yuan, S. D. March, A. H. Jones, M. E. Woodson, M. Ren, S. D. Sifferman, S. J. Maddox, J. C. Campbell, and S. R. Bank, "III-V Digital Alloys for Mid-IR Photodetectors," 60th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2018.
  8. K. J. Underwood, A. F. Briggs, S. D. Sifferman, S. R. Bank, and J. T. Gopinath, "Auger Recombination in Mid-Infrared Active Regions," Conf. on Lasers and Electro Optics (CLEO), San Jose, CA, May 2018.
  9. S. D. Sifferman, M. Motyka, A. F. Briggs, K. J. Underwood, K. M. McNicholas, R. Kudrawiec, J. T. Gopinath, and S. R. Bank, "Dilute-Bismide Alloys for GaSb-based Mid-Infrared Semiconductor Lasers," Conf. on Lasers and Electro Optics (CLEO), San Jose, CA, May 2018.
  10. K. M. McNicholas, R. Salas, S. D. Sifferman, D. Jung, M. L. Lee, and S. R. Bank, "Growth rate dependent surface morphology of rare earth arsenide films," 59th Electronic Materials Conf. (EMC), South Bend, IN, Jun 2017.
  11. A. K. Rockwell, M. E. Woodson, M. Ren, K. M. McNicholas, S. D. Sifferman, S. J. Maddox, J. C. Campbell, and S. R. Bank, "Surfactant-Mediated Epitaxy of III-V Digital Alloys," 59th Electronic Materials Conf. (EMC), South Bend, IN, Jun 2017.
  12. S. D. Sifferman, A. K. Rockwell, K. M. McNicholas, Y. Sun, R. Salas, S. J. Maddox, H. P. Nair, M. L. Lee, and S. R. Bank, "The effects of a bismuth flux on strained-layer III-V optical materials," 59th Electronic Materials Conf. (EMC), South Bend, IN, Jun 2017.
  13. K. M. McNicholas, R. H. El-Jaroudi, A. F. Briggs, S. D. March, S. D. Sifferman, and S. R. Bank, "Growth and properties of B-III-V alloys," 59th Electronic Materials Conf. (EMC), South Bend, IN, Jun 2017.
  14. A. K. Rockwell, S. J. Maddox, Y. Sun, D. Jung, S. D. Sifferman, S. D. March, M. L. Lee, and S. R. Bank, "Growth and Properties of Broadly-Tunable AlInAsSb Digital Alloys on GaSb," 32nd North American Conference on Molecular Beam Epitaxy (NAMBE), Saratoga Springs, NY, Sep 2016.
  15. A. K. Rockwell, S. J. Maddox, D. Jung, Y. Sun, S. D. Sifferman, W. Sun, M. Ren, J. Guo, J. C. Campbell, M. L. Lee, and S. R. Bank, "The Effect of Period Thickness on AlInAsSb Digital Alloys on GaSb," 58th Electronic Materials Conf. (EMC), Newark, DE, Jun 2016.
  16. (Invited) S. R. Bank, S. D. Sifferman, H. P. Nair, N. T. Sheehan, R. Salas, S. J. Maddox, and A. M. Crook, "Highly strained type-I diode lasers on GaSb," SPIE Photonics West, San Francisco, CA, Feb 2016.
  17. S. D. Sifferman, R. Salas, S. J. Maddox, H. P. Nair, N. T. Sheehan, E. M. Krivoy, E. S. Walker, and S. R. Bank, "Surfactant-mediated growth of highly strained materials for mid-infrared applications," 57th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2015.
  18. K. M. McNicholas, E. M. Krivoy, R. Salas, S. D. Sifferman, and S. R. Bank, "Tunable, lattice-matched, epitaxial semimetals," 57th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2015.
  19. R. Salas, N. T. Sheehan, S. Guchhait, K. M. McNicholas, S. D. Sifferman, V. D. Dasika, E. M. Krivoy, and S. R. Bank, "Properties of Growth Enhanced ErAs:InGaAs Nanocomposites," 57th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2015.
  20. R. Salas, S. Guchhait, S. D. Sifferman, K. M. McNicholas, V. D. Dasika, D. Jung, M. L. Lee, and S. R. Bank, "Surfactant-Mediated Growth of RE-As:InGaAs Nanocomposites," International Molecular Beam Epitaxy Conf. (IMBE), Flagstaff, AZ, Sep 2014.
  21. R. Salas, S. Guchhait, S. D. Sifferman, K. M. McNicholas, V. D. Dasika, D. J. Ironside, E. M. Krivoy, S. J. Maddox, D. Jung, M. L. Lee, and S. R. Bank, "Properties of RE-As:InGaAs Nanocomposites," 56th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2014.
  22. S. D. Sifferman, J. W. Schwede, D. C. Riley, R. T. Howe, Z. Shen, N. A. Melosh, and S. R. Bank, "Compositionally-Graded Structures for Photon-Enhanced Thermionic Emitters," 56th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2014.
  23. A. M. Mintairov, K. Sun, J. L. Merz, H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, G. Peake, A. Egorov, V. Ustinov, R. Kudrawiec, and J. Misiewicz, "Atomic arrangement and emission properties of GaAs(In,Sb)N dilute nitride quantum wells," 13th Advanced Hereostructures and Nanostructures Workshop (AHNW), Jun 2008.
  24. Y. Lin, L. F. Lester, S. R. Bank, H. P. Bae, H. B. Yuen, M. A. Wistey, and J. S. Harris, "Monolithic 1. 55-µm GaInNAsSb Quantum Well Mode-Locked Lasers," Conf. on Lasers and Electro Optics (CLEO), Baltimore, MD, May 2007.
  25. E. R. Pickett, S. R. Bank, H. B. Yuen, H. P. Bae, T. Sarmiento, A. Marshall, and J. S. Harris, "Thermally Induced Relaxation in GaInNAsSb Quantum Well Structures," Materials Research Symposium (MRS), San Francisco, CA, Apr 2007.
  26. S. Vaithilingam, I. O. Wygant, S. D. Sifferman, X. Zhuang, Y. Furukawa, O. Oralkan, S. Keren, S. S. Gambhir, and B. T. Khuri-Yakub, "Tomographic Photoacoustic Imaging Using Capacitive Micromachined Ultrasonic Transducer (CMUT) Technology," 2006 IEEE Ultrasonics Symposium, Ultrasonics Symposium, 2006. IEEE, pp. 397-400, Oct 2006.
  27. E. R. Pickett, S. R. Bank, H. B. Yuen, H. P. Bae, and J. S. Harris, "TEM Analysis of Growth and Annealing Temperature Effects on GaInNAsSb Quantum Wells," 48th Electronic Materials Conf. (EMC), University Park, PA, Jun 2006.
  28. H. P. Bae, S. R. Bank, H. B. Yuen, E. R. Pickett, M. A. Wistey, and J. S. Harris, "Analysis of Relative Speed and Temperature Dependence of Constituent Processes in the Annealing of GaInNAs(Sb)," 48th Electronic Materials Conf. (EMC), University Park, PA, Jun 2006.
  29. S. R. Bank, H. P. Bae, H. B. Yuen, E. R. Pickett, M. A. Wistey, and J. S. Harris, "Strong Luminescence Enhancement in GaInNAsSb Quantum Wells Through Variation of the Group-V Fluxes," 48th Electronic Materials Conf. (EMC), University Park, PA, Jun 2006.
  30. S. R. Bank, H. P. Bae, L. L. Goddard, H. B. Yuen, M. A. Wistey, and J. S. Harris, "Very Low-Threshold 1. 55-\µm Dilute-Nitride Lasers," 64th Device Research Conf. (DRC), Jun 2006.
  31. S. R. Bank, H. P. Bae, H. B. Yuen, M. A. Wistey, L. L. Goddard, J. S. Harris, R. Kudrawiec, M. Gladysiewicz, M. Motyka, and J. Misiewicz, "Low-Threshold Continuous-Wave 1. 55-\µm GaInNAsSb lasers," Conf. on Lasers and Electro Optics (CLEO), Long Beach, CA, May 2006.
  32. S. R. Bank, H. P. Bae, H. B. Yuen, L. L. Goddard, M. A. Wistey, T. Sarmiento, and J. S. Harris, "Low-Threshold CW 1. 55-\µm GaAs-Based Lasers," Optical Fiber Communication Conf. (OFC), Anaheim, CA, Mar 2006.
  33. S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, and J. S. Harris, "MBE Growth of High-Efficiency GaInNAsSb Quantum Wells from 1. 45 - 1. 55 \µm," North American Molecular Beam Epitaxy Conf. (NAMBE), Keystone, Colorado, Sep 2005.
  34. S. R. Bank, H. B. Yuen, M. A. Wistey, V. Lordi, H. P. Bae, and J. S. Harris, "Effects of Growth Temperature on the Optical Behavior of GaInNAsSb Alloys," 47th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2005.
  35. S. R. Bank, M. A. Wistey, L. L. Goddard, H. B. Yuen, H. P. Bae, and J. S. Harris, "1. 55 \µm GaInNAsSb Lasers on GaAs," Conf. on Lasers and Electro-Optics (CLEO), Baltimore, MD, May 2005.
  36. L. L. Goddard, S. R. Bank, M. A. Wistey, H. B. Yuen, H. P. Bae, and J. S. Harris, "Differential Gain and Nonlinear Gain Compression of GaInNAsSb/GaAs Lasers at 1. 5 \µm," Conf. on Lasers and ElectroOptics (CLEO), Baltimore, MD, May 2005.
  37. S. R. Bank, M. A. Wistey, H. B. Yuen, H. P. Bae, L. L. Goddard, and J. S. Harris, "Defect Modification in GaInNAsSb Growth with Insertion of GaAs Prelayers," Materials Research Symposium (MRS), San Francisco, CA, Apr 2005.
  38. L. L. Goddard, S. R. Bank, M. A. Wistey, H. B. Yuen, and J. S. Harris, "High performance GaInNAsSb/GaAs lasers at 1. 5 \µm," SPIE Photonics West, San Jose, CA, Jan 2005.
  39. H. B. Yuen, M. Seong, S. Yoon, R. Kudrawiec, S. R. Bank, M. A. Wistey, J. Misiewicz, A. Mascarenhas, and J. S. Harris, "Improved Optical Quality from Indium-Free GaNAsSb in the Dilute Sb (<3%) Limit," Materials Research Symposium (MRS), Boston, MA, Dec 2004.
  40. H. B. Yuen, M. A. Wistey, S. R. Bank, H. P. Bae, and J. S. Harris, "Effects of N2 Flow into a RF Plasma Cell on GaInNAs Grown by MBE," North American Molecular Beam Epitaxy Conf. (NAMBE), Bannf, Alberta, Canada, Oct 2004.
  41. M. A. Wistey, S. R. Bank, H. B. Yuen, T. Gugov, and J. S. Harris, "Protecting Wafer Surface During GaInNAs Plasma Ignition by Use of an Arsenic Cap," North American Molecular Beam Epitaxy Conf. (NAMBE), Banff, Alberta, Canada, Oct 2004.
  42. S. R. Bank, M. A. Wistey, H. B. Yuen, V. Lordi, V. Gambin, and J. S. Harris, "Effects of Antimony and Ion Damage on Carrier Localization in MBE-Grown GaInNAs," North American Molecular Beam Epitaxy Conf. (NAMBE), Banff, Alberta, Canada, Oct 2004.