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Journal Article

  1. R. Kudrawiec, P. Poloczek, J. Misiewicz, H. P. Bae, T. Sarmiento, S. R. Bank, H. B. Yuen, M. A. Wistey, and J. S. Harris, "Contactless electroreflectance of GaInNAsSb/GaNAs/GaAs quantum wells emitting at 1. 5\—1. 65 \µm: Broadening of the fundamental transition," APL, vol. 94, no. 3, pp. 031903, Jan 2009. Digital object identifier
  2. H. P. Bae, S. R. Bank, H. B. Yuen, T. Sarmiento, E. R. Pickett, M. A. Wistey, and J. S. Harris, "Temperature dependencies of annealing behaviors of GaInNAsSb/GaNAs quantum wells for long wavelength dilute-nitride lasers," APL, vol. 90, no. 23, pp. 231119, Jun 2007. Digital object identifier
  3. S. R. Bank, H. B. Yuen, M. A. Wistey, V. Lordi, H. P. Bae, and J. S. Harris, "Effects of growth temperature on the structural and optical properties of 1. 55 \µm GaInNAsSb quantum wells grown on GaAs," APL, vol. 87, no. 2, pp. 021908, Jul 2005. Digital object identifier
  4. V. Lordi, H. B. Yuen, S. R. Bank, and J. S. Harris, "Quantum-confined Stark effect of GaInNAs(Sb) quantum wells at 1300\—1600 nm," APL, vol. 85, no. 6, pp. 902-904, Aug 2004. Digital object identifier