Publications

Displaying 43 publications
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Journal Article

  1. R. H. El-Jaroudi, K. M. McNicholas, H. S. Maczko, R. Kudrawiec, and S. R. Bank, "Growth advancement of GaAs-based BGaInAs alloys emitting at 1. 3 um by molecular beam epitaxy," Journal of Crystal Growth and Design, May 2022. Digital object identifier
  2. H. S. Maczko, R. H. El-Jaroudi, J. Kopaczek, S. R. Bank, and R. Kudrawiec, "Photoreflectance studies of the band gap alignments in boron diluted BGaInAs/GaAs quantum wells," Optical Materials Express, vol. 12, no. 8, pp. 3118-3131, Dec 2022. Digital object identifier
  3. D. J. Ironside, A. M. Skipper, T. A. Leonard, M. Radulaski, T. Sarmiento, P. Dhingra, M. L. Lee, J. Vuckovic, and S. R. Bank, "High-quality GaAs planar coalescence over embedded dielectric microstructures using an all-MBE approach," Crystal Growth and Design, vol. 19, no. 6, pp. 3085-3091, Apr 2019. Digital object identifier
  4. R. Kudrawiec, P. Poloczek, J. Misiewicz, H. P. Bae, T. Sarmiento, S. R. Bank, H. B. Yuen, M. A. Wistey, and J. S. Harris, "Contactless electroreflectance of GaInNAsSb/GaNAs/GaAs quantum wells emitting at 1. 5\—1. 65 \µm: Broadening of the fundamental transition," APL, vol. 94, no. 3, pp. 031903, Jan 2009. Digital object identifier
  5. S. R. Bank, H. P. Bae, L. L. Goddard, H. B. Yuen, M. A. Wistey, R. Kudrawiec, and J. S. Harris, "Recent Progress on 1. 55-\µm Dilute-Nitride Lasers," IEEE J. Quantum Electron., vol. 43, no. 9, pp. 773-785, Sep 2007. Digital object identifier
  6. J. S. Harris, R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, D. B. Jackrel, E. R. Pickett, T. Sarmiento, L. L. Goddard, V. Lordi, and T. Gugov, "Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications," Physica Status Solidi (b), vol. 244, no. 8, pp. 2707-2729, Jul 2007. Digital object identifier
  7. H. P. Bae, S. R. Bank, H. B. Yuen, T. Sarmiento, E. R. Pickett, M. A. Wistey, and J. S. Harris, "Temperature dependencies of annealing behaviors of GaInNAsSb/GaNAs quantum wells for long wavelength dilute-nitride lasers," APL, vol. 90, no. 23, pp. 231119, Jun 2007. Digital object identifier
  8. R. Kudrawiec, S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, L. L. Goddard, J. S. Harris, M. Gladysiewicz, M. Motyka, and J. Misiewicz, "Conduction band offset for Ga0. 62In0. 38NxAs0. 991 - xSb0. 009/GaNyAs1 - y/GaAs systems with the ground state transition at 1. 5-1. 65 \µm," APL, vol. 90, no. 13, pp. 131905, Mar 2007. Digital object identifier
  9. M. A. Wistey, S. R. Bank, H. P. Bae, H. B. Yuen, E. R. Pickett, L. L. Goddard, and J. S. Harris, "GaInNAsSb/GaAs vertical cavity surface emitting lasers at 1534 nm," Electron. Lett., vol. 42, no. 5, pp. 282-283, Mar 2006. Digital object identifier
  10. S. R. Bank, H. P. Bae, H. B. Yuen, M. A. Wistey, L. L. Goddard, and J. S. Harris, "Room-temperature continuous-wave 1. 55 \µm GaInNAsSb laser on GaAs," Electron. Lett., vol. 42, no. 3, pp. 156-157, Feb 2006. Digital object identifier
  11. S. R. Bank, L. L. Goddard, M. A. Wistey, H. B. Yuen, and J. S. Harris, "On the temperature sensitivity of 1. 5-\µm GaInNAsSb lasers," IEEE J. Sel. Topics Quantum Electron., vol. 11, no. 5, pp. 1089-1098, Sep 2005. Digital object identifier
  12. S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, H. P. Bae, and J. S. Harris, "Molecular-beam epitaxy growth of low-threshold cw GaInNAsSb lasers at 1. 5 \µm," J. Vac. Sci. Technol. B, vol. 23, no. 3, pp. 1337-1340, Jun 2005. Digital object identifier
  13. M. A. Wistey, S. R. Bank, H. B. Yuen, L. L. Goddard, T. Gugov, and J. S. Harris, "Protecting wafer surface during plasma ignition using an arsenic cap," J. Vac. Sci. Technol. B, vol. 23, no. 3, pp. 1324-1327, May 2005. Digital object identifier
  14. L. L. Goddard, S. R. Bank, M. A. Wistey, H. B. Yuen, and J. S. Harris, "High performance GaInNAsSb/GaAs lasers at 1. 5 \µm," Proc. SPIE, vol. 2, pp. 2-5, Apr 2005. Digital object identifier
  15. L. L. Goddard, S. R. Bank, M. A. Wistey, H. B. Yuen, Z. Rao, and J. S. Harris, "Recombination, gain, band structure, efficiency, and reliability of 1. 5-\µm GaInNAsSb/GaAs lasers," J. Appl. Phys., vol. 97, no. 8, pp. 083101, Apr 2005. Digital object identifier
  16. D. Gollub, M. Kamp, A. Forchel, J. Seufert, S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, and J. S. Harris, "Continuous-wave operation of GaInNAsSb distributed feedback lasers at 1. 5 \µm," Electron. Lett., vol. 40, no. 23, pp. 1487-1488, Nov 2004. Digital object identifier
  17. S. R. Bank, M. A. Wistey, L. L. Goddard, H. B. Yuen, H. P. Bae, and J. S. Harris, "High-performance 1. 5 \µm GaInNAsSb lasers grown on GaAs," Electron. Lett., vol. 40, no. 19, pp. 1186-1187, Sep 2004. Digital object identifier
  18. S. R. Bank, M. A. Wistey, L. L. Goddard, H. B. Yuen, V. Lordi, and J. S. Harris, "Low-threshold continuous-wave 1. 5-\µm GaInNAsSb lasers grown on GaAs," IEEE J. Quantum Electron., vol. 40, no. 6, pp. 656-664, Jun 2004. Digital object identifier
  19. M. A. Wistey, S. R. Bank, H. B. Yuen, L. L. Goddard, and J. S. Harris, "GaInNAs(Sb) vertical-cavity surface-emitting lasers at 1. 460 \µm," J. Vac. Sci. Technol. B, vol. 22, no. 3, pp. 1562-1564, May 2004. Digital object identifier
  20. M. A. Wistey, S. R. Bank, H. B. Yuen, L. L. Goddard, and J. S. Harris, "Monolithic, GaInNAsSb VCSELs at 1. 46 \µm on GaAs by MBE," Electron. Lett., vol. 39, no. 25, pp. 1822-1823, Dec 2003. Digital object identifier
  21. S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, W. Ha, and J. S. Harris, "Low-threshold CW GaInNAsSb/GaAs laser at 1. 49 \µm," Electron. Lett., vol. 39, no. 20, pp. 1445-1446, Oct 2003. Digital object identifier
  22. S. R. Bank, W. Ha, V. Gambin, M. A. Wistey, H. B. Yuen, L. L. Goddard, S. Kim, and J. S. Harris, "1. 5 \µm GaInNAs(Sb) lasers grown on GaAs by MBE," J. Cryst. Growth, vol. 251, no. 1-4, pp. 367-371, Apr 2003. Digital object identifier

Conference Paper

  1. Q. Meng, R. H. El-Jaroudi, R. C. White, H. S. Maczko, T. Dey, R. Kudrawiec, S. R. Bank, and M. A. Wistey, "Bandgap Evolution in B-III-V Alloys," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  2. H. S. Maczko, J. Kopaczek, S. J. Maddox, A. K. Rockwell, S. D. March, M. Gladysiewicz, S. R. Bank, and R. Kudrawiec, "An AlInAsSb/GaSb Superlattice Analysis–The Digital Alloy Iduced Conduction Band States," International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Hong Kong, China, Nov 2018. Digital object identifier
  3. K. M. McNicholas, D. J. Ironside, R. H. El-Jaroudi, H. S. Maczko, G. Cossio, L. J. Nordin, S. D. Sifferman, R. Kudrawiec, E. T. Yu, D. Wasserman, and S. R. Bank, "BGaAs/GaP heteroepitaxy for strain-free luminescent layers on Si," 60th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2018.
  4. E. R. Pickett, S. R. Bank, H. B. Yuen, H. P. Bae, T. Sarmiento, A. Marshall, and J. S. Harris, "Thermally Induced Relaxation in GaInNAsSb Quantum Well Structures," Materials Research Symposium (MRS), San Francisco, CA, Apr 2007.
  5. S. R. Bank, H. P. Bae, L. L. Goddard, H. B. Yuen, M. A. Wistey, and J. S. Harris, "Very Low-Threshold 1. 55-\µm Dilute-Nitride Lasers," 64th Device Research Conf. (DRC), Jun 2006.
  6. S. R. Bank, H. P. Bae, H. B. Yuen, M. A. Wistey, L. L. Goddard, J. S. Harris, R. Kudrawiec, M. Gladysiewicz, M. Motyka, and J. Misiewicz, "Low-Threshold Continuous-Wave 1. 55-\µm GaInNAsSb lasers," Conf. on Lasers and Electro Optics (CLEO), Long Beach, CA, May 2006.
  7. S. R. Bank, H. P. Bae, H. B. Yuen, L. L. Goddard, M. A. Wistey, T. Sarmiento, and J. S. Harris, "Low-Threshold CW 1. 55-\µm GaAs-Based Lasers," Optical Fiber Communication Conf. (OFC), Anaheim, CA, Mar 2006.
  8. L. L. Goddard, S. R. Bank, M. A. Wistey, H. B. Yuen, H. P. Bae, and J. S. Harris, "Differential Gain and Nonlinear Gain Compression of GaInNAsSb/GaAs Lasers at 1. 5 \µm," Conf. on Lasers and ElectroOptics (CLEO), Baltimore, MD, May 2005.
  9. S. R. Bank, M. A. Wistey, L. L. Goddard, H. B. Yuen, H. P. Bae, and J. S. Harris, "1. 55 \µm GaInNAsSb Lasers on GaAs," Conf. on Lasers and Electro-Optics (CLEO), Baltimore, MD, May 2005.
  10. S. R. Bank, M. A. Wistey, H. B. Yuen, H. P. Bae, L. L. Goddard, and J. S. Harris, "Defect Modification in GaInNAsSb Growth with Insertion of GaAs Prelayers," Materials Research Symposium (MRS), San Francisco, CA, Apr 2005.
  11. L. L. Goddard, S. R. Bank, M. A. Wistey, H. B. Yuen, and J. S. Harris, "High performance GaInNAsSb/GaAs lasers at 1. 5 \µm," SPIE Photonics West, San Jose, CA, Jan 2005.
  12. S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, H. P. Bae, and J. S. Harris, "MBE Growth of Low Threshold CW GaInNAsSb Lasers at 1. 5 \µm," North American Molecular Beam Epitaxy Conf. (NAMBE), Banff, Alberta, Canada, Oct 2004.
  13. S. R. Bank, M. A. Wistey, L. L. Goddard, H. B. Yuen, and J. S. Harris, "The Role and Suppression of Carrier Leakage in 1. 5 \µm GaInNAsSb/GaAs Lasers," 62nd Device Research Conf. (DRC), Notre Dame, IN, Jun 2004.
  14. L. L. Goddard, S. R. Bank, M. A. Wistey, H. B. Yuen, and J. S. Harris, "Measurements of Intrinsic Properties of High Power CW Single Quantum Well GaInNAsSb/GaAs Lasers at 1. 5 \µm," Conf. on Lasers and Electro-Optics (CLEO), May 2004.
  15. S. R. Bank, L. L. Goddard, M. A. Wistey, H. B. Yuen, and J. S. Harris, "The Temperature Sensitivity of 1. 5 \µm GaInNAsSb Lasers on GaAs," Conf. on Lasers and Electro-Optics (CLEO), May 2004.
  16. S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, and J. S. Harris, "Progress Towards High Power 1. 5 \µm GaInNAsSb/GaAs Lasers for Raman Amplifiers," Optical Fiber Communication Conf. (OFC), Los Angeles, CA, Feb 2004.
  17. M. A. Wistey, S. R. Bank, H. B. Yuen, L. L. Goddard, and J. S. Harris, "Real-Time Ion Count from Nitrogen Plasma Source," North American Molecular Beam Epitaxy Conf. (NAMBE), Keystone, CO, Oct 2003.
  18. S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, and J. S. Harris, "Low Threshold, CW, Room Temperature 1. 49 \µm GaAs-Based Lasers," International Symposium on Compound Semiconductors (ISCS), San Diego, CA, Aug 2003.
  19. S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, and J. S. Harris, "Low Threshold, CW, Room Temperature 1. 49 \µm GaAs-Based Lasers," 61st Device Research Conf. (DRC) Late News, Salt Lake City, UT, Jun 2003.
  20. D. S. Gardner, S. R. Bank, L. L. Goddard, P. Griffin, J. S. Harris, R. Swanson, and J. R. Patel, "On the Luminescence Efficiency of Silicon Diodes," Materials Research Society (MRS) Spring Meeting, San Francisco, CA, Apr 2003.
  21. W. Ha, V. Gambin, S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, S. Kim, and J. S. Harris, "A 1. 5 \µm GaInNAs(Sb) Laser Grown on GaAs by MBE," International Conf. on Molecular Beam Epitaxy (MBE), San Francisco, CA, Sep 2002.