Publications

Displaying 29 publications
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Journal Article

  1. D. J. Ironside, A. M. Skipper, T. A. Leonard, M. Radulaski, T. Sarmiento, P. Dhingra, M. L. Lee, J. Vuckovic, and S. R. Bank, "High-quality GaAs planar coalescence over embedded dielectric microstructures using an all-MBE approach," Crystal Growth and Design, vol. 19, no. 6, pp. 3085-3091, Apr 2019. Digital object identifier
  2. T. Trivedi, A. Roy, H. C. P. Movva, E. S. Walker, S. R. Bank, D. P. Neikirk, and S. K. Banerjee, "Versatile Large-Area Custom-Feature van der Waals Epitaxy of Topological Insulators," ACS Nano, vol. 11, pp. 7457-7467, Jul 2017. Digital object identifier
  3. R. Kudrawiec, P. Poloczek, J. Misiewicz, H. P. Bae, T. Sarmiento, S. R. Bank, H. B. Yuen, M. A. Wistey, and J. S. Harris, "Contactless electroreflectance of GaInNAsSb/GaNAs/GaAs quantum wells emitting at 1. 5\—1. 65 \µm: Broadening of the fundamental transition," APL, vol. 94, no. 3, pp. 031903, Jan 2009. Digital object identifier
  4. J. S. Harris, R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, D. B. Jackrel, E. R. Pickett, T. Sarmiento, L. L. Goddard, V. Lordi, and T. Gugov, "Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications," Physica Status Solidi (b), vol. 244, no. 8, pp. 2707-2729, Jul 2007. Digital object identifier
  5. H. P. Bae, S. R. Bank, H. B. Yuen, T. Sarmiento, E. R. Pickett, M. A. Wistey, and J. S. Harris, "Temperature dependencies of annealing behaviors of GaInNAsSb/GaNAs quantum wells for long wavelength dilute-nitride lasers," APL, vol. 90, no. 23, pp. 231119, Jun 2007. Digital object identifier
  6. S. R. Bank, M. A. Wistey, H. B. Yuen, V. Lordi, V. Gambin, and J. S. Harris, "Effects of antimony and ion damage on carrier localization in molecular-beam-epitaxy-grown GaInNAs," J. Vac. Sci. Technol. B, vol. 23, no. 3, pp. 1320-1323, Jun 2005. Digital object identifier
  7. T. Gugov, V. Gambin, M. A. Wistey, H. B. Yuen, S. R. Bank, and J. S. Harris, "Use of transmission electron microscopy in the characterization of GaInNAs(Sb) quantum well structures grown by molecular beam epitaxy," J. Vac. Sci. Technol. B, vol. 22, no. 3, pp. 1588-1592, May 2004. Digital object identifier
  8. K. Volz, V. Gambin, W. Ha, M. A. Wistey, H. B. Yuen, S. R. Bank, and J. S. Harris, "The role of Sb in the MBE growth of (GaIn)(NAsSb)," J. Cryst. Growth, vol. 251, no. 1-4, pp. 360-366, Apr 2003. Digital object identifier
  9. S. R. Bank, W. Ha, V. Gambin, M. A. Wistey, H. B. Yuen, L. L. Goddard, S. Kim, and J. S. Harris, "1. 5 \µm GaInNAs(Sb) lasers grown on GaAs by MBE," J. Cryst. Growth, vol. 251, no. 1-4, pp. 367-371, Apr 2003. Digital object identifier
  10. V. Gambin, H. Wonill, M. A. Wistey, H. B. Yuen, S. R. Bank, S. M. Kim, and J. S. Harris, "GaInNAsSb for 1. 3\—1. 6 \µm-long wavelength lasers grown by molecular beam epitaxy," IEEE J. Sel. Topics Quantum Electron., vol. 8, no. 4, pp. 795-800, Jul 2002. Digital object identifier
  11. W. Ha, V. Gambin, M. A. Wistey, S. R. Bank, S. Kim, and J. S. Harris, "Multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes operating out to 1. 4 mu;m," PTL, vol. 14, no. 5, pp. 591-593, May 2002. Digital object identifier
  12. W. Ha, V. Gambin, M. A. Wistey, S. R. Bank, H. B. Yuen, S. Kim, and J. S. Harris, "Long wavelength GaInNAsSb/GaNAsSb multiple quantum well lasers," Electron. Lett., vol. 38, no. 6, pp. 277-278, Mar 2002. Digital object identifier

Conference Paper

  1. S. E. Muschinske, E. S. Walker, C. J. Brennan, Y. Sun, A. Yau, T. Trivedi, A. Roy, S. D. March, A. F. Briggs, E. M. Krivoy, D. Akinwande, M. L. Lee, E. T. Yu, and S. R. Bank, "Epitaxial Growth and Characterization of 2-D BixSb1-x Alloys on Si(111)," 60th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2018.
  2. E. R. Pickett, S. R. Bank, H. B. Yuen, H. P. Bae, T. Sarmiento, A. Marshall, and J. S. Harris, "Thermally Induced Relaxation in GaInNAsSb Quantum Well Structures," Materials Research Symposium (MRS), San Francisco, CA, Apr 2007.
  3. S. R. Bank, H. P. Bae, H. B. Yuen, L. L. Goddard, M. A. Wistey, T. Sarmiento, and J. S. Harris, "Low-Threshold CW 1. 55-\µm GaAs-Based Lasers," Optical Fiber Communication Conf. (OFC), Anaheim, CA, Mar 2006.
  4. S. R. Bank, M. A. Wistey, H. B. Yuen, V. Lordi, V. Gambin, and J. S. Harris, "Effects of Antimony and Ion Damage on Carrier Localization in MBE-Grown GaInNAs," North American Molecular Beam Epitaxy Conf. (NAMBE), Banff, Alberta, Canada, Oct 2004.
  5. T. Gugov, V. Gambin, M. A. Wistey, H. B. Yuen, S. R. Bank, and J. S. Harris, "TEM Structural Characterization of GaInNAs and GaInNAsSb Quantum Wells Grown by Molecular Beam Epitaxy," 46th Electronic Materials Conf. (EMC), Notre Dame, IN, Jun 2004.
  6. M. A. Wistey, S. R. Bank, H. B. Yuen, V. Gambin, and J. S. Harris, "Low-Voltage Deflection Plates Reduce Plasma Damage in MBE Dilute Nitride Growth," 46th Electronic Materials Conf. (EMC), Notre Dame, IN, Jun 2004.
  7. T. Gugov, V. Gambin, M. A. Wistey, H. B. Yuen, S. R. Bank, and J. S. Harris, "Use of Transmission Electron Microscopy in the Characterization of GaInNAs(Sb) Quantum Well Structures Grown by Molecular Beam Epitaxy," North American Molecular Beam Epitaxy Conf. (NAMBE), Keystone, CO, Oct 2003.
  8. S. R. Bank, H. B. Yuen, W. Ha, V. Gambin, M. A. Wistey, and J. S. Harris, "Strong Photoluminescence Enhancement of 1. 3 \µm GaInNAs Active Layers by Introduction of Antimony," 45th Electronic Materials Conf. (EMC), Salt Lake City, UT, Jun 2003.
  9. W. Ha, V. Gambin, S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, S. Kim, and J. S. Harris, "A 1. 5 \µm GaInNAs(Sb) Laser Grown on GaAs by MBE," International Conf. on Molecular Beam Epitaxy (MBE), San Francisco, CA, Sep 2002.
  10. V. Gambin, V. Lordi, W. Ha, M. A. Wistey, K. Volz, S. R. Bank, H. B. Yuen, and J. S. Harris, "High Intensity 1. 3\—1. 6 \µm Luminescence and Structural Changes on Anneal from MBE Grown (Ga,In)(N,As,Sb)," International Conf. on Molecular Beam Epitaxy (MBE), San Fancisco, CA, Sep 2002.
  11. W. Ha, V. Gambin, S. R. Bank, M. A. Wistey, H. B. Yuen, S. Kim, and J. S. Harris, "A 1. 5 \µm GaInNAs(Sb) Laser Grown on GaAs by MBE," Proc. 18th IEEE International Semiconductor Laser Conf. (ISLC), Garmisch, Germany, Sep 2002.
  12. W. Ha, V. Gambin, S. R. Bank, M. A. Wistey, S. Kim, and J. S. Harris, "A 1. 5 \µm GaInNAs(Sb) Laser Grown on GaAs by MBE," 60th Device Research Conf. (DRC), Santa Barbara, CA, Jun 2002.
  13. V. Gambin, W. Ha, M. A. Wistey, S. R. Bank, H. B. Yuen, S. Kim, and J. S. Harris, "Long Wavelength, High Efficiency Photoluminescence from MBE Grown GaInNAsSb," 44th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2002.
  14. W. Ha, V. Gambin, S. R. Bank, M. A. Wistey, S. Kim, and J. S. Harris, "Long Wavelength GaInNAs(Sb) Lasers on GaAs," 14th International Conf. on Indium-Phosphide and Related Materials (IPRM), Stockholm, Sweden, May 2002.
  15. W. Ha, V. Gambin, S. R. Bank, M. A. Wistey, J. S. Harris, and S. Kim, "Long wavelength GaInNAs(Sb) lasers on GaAs," Lasers and Electro-Optics, 2002. CLEO 02. Technical Digest. Summaries of Papers Presented at the, Long Beach, CA, pp. 269-270, May 2002. Digital object identifier
  16. W. Ha, V. Gambin, S. R. Bank, M. A. Wistey, S. Kim, and J. S. Harris, "Long Wavelength GaInNAs(Sb) Lasers on GaAs," Conf. on Lasers and Electro-Optics (CLEO), Long Beach, CA, May 2002.
  17. V. Lordi, V. Gambin, W. Ha, S. R. Bank, and J. S. Harris, "Examination of N Incorporation into GaInNAs," Materials Research Symposium (MRS), April, Apr 2002.