Publications

Displaying 19 publications
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Journal Article

  1. D. J. Ironside, A. M. Skipper, T. A. Leonard, M. Radulaski, T. Sarmiento, P. Dhingra, M. L. Lee, J. Vuckovic, and S. R. Bank, "High-quality GaAs planar coalescence over embedded dielectric microstructures using an all-MBE approach," Crystal Growth and Design, vol. 19, no. 6, pp. 3085-3091, Apr 2019. Digital object identifier
  2. W. Sun, Z. Lu, X. Zheng, J. C. Campbell, S. J. Maddox, H. P. Nair, and S. R. Bank, "High-Gain InAs Avalanche Photodiodes," IEEE J. of Quantum Electron., vol. 49, no. 2, pp. 154, Feb 2013. Digital object identifier
  3. S. J. Maddox, W. Sun, Z. Lu, H. P. Nair, J. C. Campbell, and S. R. Bank, "Enhanced Low-Noise Gain from InAs Avalanche Photodiodes with Reduced Dark Current and Background Doping," APL, vol. 101, no. 15, pp. 151124, Oct 2012. Digital object identifier
  4. R. Kudrawiec, P. Poloczek, J. Misiewicz, H. P. Bae, T. Sarmiento, S. R. Bank, H. B. Yuen, M. A. Wistey, and J. S. Harris, "Contactless electroreflectance of GaInNAsSb/GaNAs/GaAs quantum wells emitting at 1. 5\—1. 65 \µm: Broadening of the fundamental transition," APL, vol. 94, no. 3, pp. 031903, Jan 2009. Digital object identifier
  5. J. S. Harris, R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, D. B. Jackrel, E. R. Pickett, T. Sarmiento, L. L. Goddard, V. Lordi, and T. Gugov, "Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications," Physica Status Solidi (b), vol. 244, no. 8, pp. 2707-2729, Jul 2007. Digital object identifier
  6. H. P. Bae, S. R. Bank, H. B. Yuen, T. Sarmiento, E. R. Pickett, M. A. Wistey, and J. S. Harris, "Temperature dependencies of annealing behaviors of GaInNAsSb/GaNAs quantum wells for long wavelength dilute-nitride lasers," APL, vol. 90, no. 23, pp. 231119, Jun 2007. Digital object identifier

Conference Paper

  1. J. Zhang, X. Zhao, R. Ul. Haque, F. Deng, C. Chen, Y. Zhang, S. D. March, S. J. Maddox, S. R. Bank, X. Zhang, and R. D. Averitt, "Ultrafast broadband tuninng of InAs THz plasmonic arrays," Frontiers in Optics + Laser Science 2021, Washington, DC United States, Nov 2021.
  2. (Invited) S. R. Bank, A. K. Rockwell, S. J. Maddox, W. Sun, and J. C. Campbell, "Digital Alloy Growth of AlInAsSb for Low Noise Avalanche Photodetectors," 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), Nagoya, Japan, Aug 2016.
  3. A. K. Rockwell, S. J. Maddox, D. Jung, Y. Sun, S. D. Sifferman, W. Sun, M. Ren, J. Guo, J. C. Campbell, M. L. Lee, and S. R. Bank, "The Effect of Period Thickness on AlInAsSb Digital Alloys on GaSb," 58th Electronic Materials Conf. (EMC), Newark, DE, Jun 2016.
  4. (Invited) S. R. Bank, S. J. Maddox, S. D. March, W. Sun, M. Ren, and J. C. Campbell, "Advances in IR APD materials research," SPIE Defense and Commercial Sensing, Baltimore, MD, Apr 2016.
  5. (Invited) S. R. Bank, S. J. Maddox, W. Sun, H. P. Nair, and J. C. Campbell, "Recent progress in high gain InAs avalanche photodiodes (Presentation Recording)," Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications (SPIE), San Diego, CA, vol. 9555, pp. 955509, Aug 2015. Digital object identifier
  6. (Invited) S. R. Bank, S. J. Maddox, W. Sun, H. P. Nair, and J. C. Campbell, "Recent progress in high gain InAs avalanche photodiodes," SPIE Optics and Photonics Meeting (SPIE_OPM), San Diego, CA, Aug 2015.
  7. S. J. Maddox, S. D. March, W. Sun, J. C. Campbell, and S. R. Bank, "Growth and Properties of Broadly Tunable AlInAsSb Digital Alloys on GaSb," 57th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2015.
  8. W. Sun, S. J. Maddox, S. R. Bank, and J. C. Campbell, "Room Temperature High-Gain InAs/AlAsSb Avalanche Photodiode," IEEE Photonics Conf. (IPC), San Diego, CA, Oct 2014.
  9. W. Sun, S. J. Maddox, S. R. Bank, and J. C. Campbell, "Record High Gain from InAs Avalanche Photodiodes at Room Temperature," 72nd Device Research Conf. (DRC), Santa Barbara, Ca, Jun 2014.
  10. W. Sun, S. J. Maddox, Z. Lu, H. P. Nair, X. Zheng, S. R. Bank, and J. C. Campbell, "Charge-Compensated High Gain InAs Avalanche Photodiodes," IEEE Photonics Conf. (IPC), Burlingame, CA, Sep 2012.
  11. S. J. Maddox, W. Sun, Z. Lu, H. P. Nair, J. C. Campbell, and S. R. Bank, "InAs Avalanche Photodiode with Improved Electric Field Uniformity," 70th Device Research Conf. (DRC), State College, PA, Jun 2012.
  12. E. R. Pickett, S. R. Bank, H. B. Yuen, H. P. Bae, T. Sarmiento, A. Marshall, and J. S. Harris, "Thermally Induced Relaxation in GaInNAsSb Quantum Well Structures," Materials Research Symposium (MRS), San Francisco, CA, Apr 2007.
  13. S. R. Bank, H. P. Bae, H. B. Yuen, L. L. Goddard, M. A. Wistey, T. Sarmiento, and J. S. Harris, "Low-Threshold CW 1. 55-\µm GaAs-Based Lasers," Optical Fiber Communication Conf. (OFC), Anaheim, CA, Mar 2006.