Publications

Displaying 4 publications
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Journal Article

  1. D. Jung, D. J. Ironside, S. R. Bank, A. C. Gossard, and J. E. Bowers, "Effect of growth interruption in 1. 55 μm InAs/InAlGaAs quantum dots on InP grown by molecular beam epitaxy," Journal of Applied Physics, vol. 123, no. 20, pp. 205302, Dec 2018. Digital object identifier
  2. A. M. Mintairov, K. Sun, J. L. Merz, H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, G. Peake, A. Egorov, V. Ustinov, R. Kudrawiec, and J. Misiewicz, "Atomic arrangement and emission properties of GaAs(In, Sb)N quantum wells," Semic. Sci. Technol., vol. 24, no. 7, pp. 075013, Jul 2009. Digital object identifier

Conference Paper

  1. A. K. Rockwell, S. J. Maddox, D. Jung, Y. Sun, S. D. Sifferman, W. Sun, M. Ren, J. Guo, J. C. Campbell, M. L. Lee, and S. R. Bank, "The Effect of Period Thickness on AlInAsSb Digital Alloys on GaSb," 58th Electronic Materials Conf. (EMC), Newark, DE, Jun 2016.
  2. A. M. Mintairov, K. Sun, J. L. Merz, H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, G. Peake, A. Egorov, V. Ustinov, R. Kudrawiec, and J. Misiewicz, "Atomic arrangement and emission properties of GaAs(In,Sb)N dilute nitride quantum wells," 13th Advanced Hereostructures and Nanostructures Workshop (AHNW), Jun 2008.