Publications
Journal Article
- D. Jung, D. J. Ironside, S. R. Bank, A. C. Gossard, and J. E. Bowers, "Effect of growth interruption in 1. 55 μm InAs/InAlGaAs quantum dots on InP grown by molecular beam epitaxy," Journal of Applied Physics, vol. 123, no. 20, pp. 205302, Dec 2018.
- Y. Xin, A. Stintz, H. Cao, L. Zhang, A. Gray, S. R. Bank, M. Osinski, J. S. Harris, and L. F. Lester, "Monolithic passively mode-locked lasers using quantum-dot or quantum-well materials grown on GaAs substrates," Proc. SPIE, Proc. SPIE, San Jose, CA, vol. 6468, pp. 46, Jan 2007.
- M. M. Oye, M. A. Wistey, J. M. Reifsnider, S. Agarwal, T. J. Mattord, S. Govindaraju, G. A. Hallock, A. L. Holmes Jr., S. R. Bank, H. B. Yuen, and J. S. Harris, "Ion damage effects from negative deflector plate voltages during the plasma-assisted molecular-beam epitaxy growth of dilute nitrides," APL, vol. 86, no. 22, pp. 221902, May 2005.