Publications

Displaying 25 publications
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Journal Article

  1. J. A. McArthur, A. A. Dadey, S. D. March, A. H. Jones, X. Xue, R. Salas, J. C. Campbell, and S. R. Bank, "Demonstration of the AlInAsSb Cascaded Multiplier Avalanche Photodiode," Applied Physics Letters, vol. 123, no. 4, pp. 041106, Jul 2023. Digital object identifier
  2. D. Chen, S. D. March, A. H. Jones, Y. Shen, A. A. Dadey, K. Sun, J. A. McArthur, A. M. Skipper, X. Xue, B. Guo, J. Bai, S. R. Bank, and J. C. Campbell, "Photon-trapping-enhanced avalanche photodiodes for mid-infrared applications," Nature Photonics, May 2023. Digital object identifier
  3. B. Guo, S. Z. Ahmed, X. Xue, A. K. Rockwell, J. Ha, S. Lee, B. Liang, A. H. Jones, J. A. McArthur, S. H. Kodati, T. J. Ronningen, S. Krishna, J. Kim, S. R. Bank, A. W. Ghosh, and J. C. Campbell, "Temperature dependence of avalanche breakdown of AlGaAsSb and AlInAsSb avalanche photodiodes," Journal of Lightwave Technology, Jun 2022. Digital object identifier
  4. R. Wang, D. Chen, J. A. McArthur, X. Xue, A. H. Jones, S. R. Bank, and J. C. Campbell, "Al0. 3InAsSb/Al0. 7InAsSb Digital Alloy nBn Photodetectors," Journal of Lightwave Technology, vol. 40, no. 1, pp. 113-120, Oct 2021. Digital object identifier
  5. D. Chen, R. Wang, J. A. McArthur, X. Xue, A. H. Jones, S. R. Bank, and J. C. Campbell, "Demonstration of infrared nBn photodetectors based on the AlInAsSb digital alloy materials system," Applied Physics Letters, vol. 119, no. 3, pp. 031101, Jul 2021. Digital object identifier
  6. D. Chen, J. A. McArthur, S. D. March, X. Xue, A. H. Jones, A. A. Dadey, S. R. Bank, and J. C. Campbell, "Comparison and analysis of Al0. 7InAsSb avalanche photodiodes with different background doping polarities," Applied Physics Letters, vol. 119, no. 3, pp. 032101, Jul 2021. Digital object identifier
  7. J. S. Harris, R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, D. B. Jackrel, E. R. Pickett, T. Sarmiento, L. L. Goddard, V. Lordi, and T. Gugov, "Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications," Physica Status Solidi (b), vol. 244, no. 8, pp. 2707-2729, Jul 2007. Digital object identifier
  8. H. P. Bae, S. R. Bank, H. B. Yuen, T. Sarmiento, E. R. Pickett, M. A. Wistey, and J. S. Harris, "Temperature dependencies of annealing behaviors of GaInNAsSb/GaNAs quantum wells for long wavelength dilute-nitride lasers," APL, vol. 90, no. 23, pp. 231119, Jun 2007. Digital object identifier
  9. S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, A. Moto, and J. S. Harris, "Enhanced luminescence in GaInNAsSb quantum wells through variation of the arsenic and antimony fluxes," APL, vol. 88, no. 24, pp. 241923, Jun 2006. Digital object identifier
  10. M. A. Wistey, S. R. Bank, H. P. Bae, H. B. Yuen, E. R. Pickett, L. L. Goddard, and J. S. Harris, "GaInNAsSb/GaAs vertical cavity surface emitting lasers at 1534 nm," Electron. Lett., vol. 42, no. 5, pp. 282-283, Mar 2006. Digital object identifier
  11. H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, and A. Moto, "Comparison of GaNAsSb and GaNAs as quantum-well barriers for GaInNAsSb optoelectronic devices operating at 1. 3\—1. 55 \µm," J. Appl. Phys., vol. 96, no. 11, pp. 6375-6381, Dec 2004. Digital object identifier

Conference Paper

  1. J. A. McArthur, A. A. Dadey, S. D. March, A. H. Jones, X. Xue, J. C. Campbell, and S. R. Bank, "The Cascaded Multiplier Avalanche Photodiode," 80th Device Research Conf. (DRC), Columbus, OH, Jun 2022.
  2. R. Wang, D. Chen, J. A. McArthur, X. Xue, S. R. Bank, and J. C. Campbell, "AlxIn1-xAsySb1-y digital alloy nBn photodetectors," 2021 IEEE Photonics Conference (IPC), Vancouver, BC, Canada, Oct 2021.
  3. A. A. Dadey, S. D. March, X. Xue, S. R. Bank, and J. C. Campbell, "Cryogenic Noise of Staircase Avalanche Photodiodes," 2021 IEEE Photonics Conference (IPC), Vancouver, BC, Canada, Oct 2021.
  4. R. H. El-Jaroudi, A. H. Jones, A. A. Dadey, B. Guo, X. Xue, J. C. Campbell, and S. R. Bank, "Growth of B-III-V alloys for GaAs-based optoelectronic devices," 62nd Electronic Materials Conf. (EMC), Virtual, Jun 2021.
  5. R. H. El-Jaroudi, A. A. Dadey, X. Xue, A. H. Jones, B. Guo, J. C. Campbell, and S. R. Bank, "Reducing III-V avalanche photodiode noise through the introduction of boron," 79th Device Research Conf. (DRC), Virtual, Jun 2021.
  6. (Invited) S. R. Bank, X. Xue, S. D. March, Y. Yuan, A. H. Jones, A. K. Rockwell, and J. C. Campbell, "Towards Single Photon Counting at Room Temperature with Digital Alloy Avalanche Photodiodes," IEEE Research and Applications of Photonics in Defense (RAPID), Miramar Beach, FL, Aug 2020.
  7. A. K. Rockwell, A. H. Jones, Y. Yuan, X. Xue, S. D. March, J. C. Campbell, and S. R. Bank, "Temperature Stability of III-V Digital Alloy Bandgaps," 62nd Electronic Materials Conf. (EMC), Columbus, OH, Jun 2020.
  8. E. R. Pickett, S. R. Bank, H. B. Yuen, H. P. Bae, T. Sarmiento, A. Marshall, and J. S. Harris, "Thermally Induced Relaxation in GaInNAsSb Quantum Well Structures," Materials Research Symposium (MRS), San Francisco, CA, Apr 2007.
  9. E. R. Pickett, S. R. Bank, H. B. Yuen, H. P. Bae, and J. S. Harris, "TEM Analysis of Growth and Annealing Temperature Effects on GaInNAsSb Quantum Wells," 48th Electronic Materials Conf. (EMC), University Park, PA, Jun 2006.
  10. S. R. Bank, H. P. Bae, H. B. Yuen, E. R. Pickett, M. A. Wistey, and J. S. Harris, "Strong Luminescence Enhancement in GaInNAsSb Quantum Wells Through Variation of the Group-V Fluxes," 48th Electronic Materials Conf. (EMC), University Park, PA, Jun 2006.
  11. H. P. Bae, S. R. Bank, H. B. Yuen, E. R. Pickett, M. A. Wistey, and J. S. Harris, "Analysis of Relative Speed and Temperature Dependence of Constituent Processes in the Annealing of GaInNAs(Sb)," 48th Electronic Materials Conf. (EMC), University Park, PA, Jun 2006.
  12. H. B. Yuen, S. R. Bank, M. A. Wistey, H. P. Bae, J. S. Harris, and A. Moto, "Effects of N2 Flow on GaInNAs Grown by a RF Plasma cell in MBE," Materials Research Symposium (MRS), San Franciso, CA, Apr 2004.
  13. H. B. Yuen, V. Lordi, S. R. Bank, M. A. Wistey, J. S. Harris, and A. Moto, "Analysis of Material Properties of GaNAs(Sb) Grown by MBE," Materials Research Symposium (MRS), Boston, MA, Dec 2003.
  14. H. B. Yuen, S. R. Bank, M. A. Wistey, A. Moto, and J. S. Harris, "An Investigation of GaNAs(Sb) for Strain Compensated Active Regions at 1. 3 and 1. 55 \µm," 45th Electronic Materials Conf. (EMC), Salt Lake City, UT, Jun 2003.