Publications
Journal Article
- J. S. Harris, R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, D. B. Jackrel, E. R. Pickett, T. Sarmiento, L. L. Goddard, V. Lordi, and T. Gugov, "Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications," Physica Status Solidi (b), vol. 244, no. 8, pp. 2707-2729, Jul 2007.
- H. P. Bae, S. R. Bank, H. B. Yuen, T. Sarmiento, E. R. Pickett, M. A. Wistey, and J. S. Harris, "Temperature dependencies of annealing behaviors of GaInNAsSb/GaNAs quantum wells for long wavelength dilute-nitride lasers," APL, vol. 90, no. 23, pp. 231119, Jun 2007.
- M. A. Wistey, S. R. Bank, H. P. Bae, H. B. Yuen, E. R. Pickett, L. L. Goddard, and J. S. Harris, "GaInNAsSb/GaAs vertical cavity surface emitting lasers at 1534 nm," Electron. Lett., vol. 42, no. 5, pp. 282-283, Mar 2006.
- S. R. Bank, M. A. Wistey, H. B. Yuen, V. Lordi, V. Gambin, and J. S. Harris, "Effects of antimony and ion damage on carrier localization in molecular-beam-epitaxy-grown GaInNAs," J. Vac. Sci. Technol. B, vol. 23, no. 3, pp. 1320-1323, Jun 2005.
- T. Gugov, V. Gambin, M. A. Wistey, H. B. Yuen, S. R. Bank, and J. S. Harris, "Use of transmission electron microscopy in the characterization of GaInNAs(Sb) quantum well structures grown by molecular beam epitaxy," J. Vac. Sci. Technol. B, vol. 22, no. 3, pp. 1588-1592, May 2004.
- K. Volz, V. Gambin, W. Ha, M. A. Wistey, H. B. Yuen, S. R. Bank, and J. S. Harris, "The role of Sb in the MBE growth of (GaIn)(NAsSb)," J. Cryst. Growth, vol. 251, no. 1-4, pp. 360-366, Apr 2003.
- S. R. Bank, W. Ha, V. Gambin, M. A. Wistey, H. B. Yuen, L. L. Goddard, S. Kim, and J. S. Harris, "1. 5 \µm GaInNAs(Sb) lasers grown on GaAs by MBE," J. Cryst. Growth, vol. 251, no. 1-4, pp. 367-371, Apr 2003.
- V. Gambin, H. Wonill, M. A. Wistey, H. B. Yuen, S. R. Bank, S. M. Kim, and J. S. Harris, "GaInNAsSb for 1. 3\—1. 6 \µm-long wavelength lasers grown by molecular beam epitaxy," IEEE J. Sel. Topics Quantum Electron., vol. 8, no. 4, pp. 795-800, Jul 2002.
- W. Ha, V. Gambin, M. A. Wistey, S. R. Bank, S. Kim, and J. S. Harris, "Multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes operating out to 1. 4 mu;m," PTL, vol. 14, no. 5, pp. 591-593, May 2002.
- W. Ha, V. Gambin, M. A. Wistey, S. R. Bank, H. B. Yuen, S. Kim, and J. S. Harris, "Long wavelength GaInNAsSb/GaNAsSb multiple quantum well lasers," Electron. Lett., vol. 38, no. 6, pp. 277-278, Mar 2002.