Publications

Displaying 13 publications
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Journal Article

  1. R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, and J. Misiewicz, "Contactless electroreflectance approach to study the Fermi level position in GaInNAs/GaAs quantum wells," J. Appl. Phys., vol. 102, no. 11, pp. 113501, Dec 2007. Digital object identifier
  2. M. M. Oye, T. J. Mattord, G. A. Hallock, S. R. Bank, M. A. Wistey, J. M. Reifsnider, A. J. Ptak, H. B. Yuen, J. S. Harris, and A. L. Holmes Jr., "Effects of different plasma species (atomic N, metastable N2*, and ions) on the optical properties of dilute nitride materials grown by plasma-assisted molecular-beam epitaxy," APL, vol. 91, no. 19, pp. 191903, Sep 2007. Digital object identifier
  3. S. R. Bank, H. P. Bae, L. L. Goddard, H. B. Yuen, M. A. Wistey, R. Kudrawiec, and J. S. Harris, "Recent Progress on 1. 55-\µm Dilute-Nitride Lasers," IEEE J. Quantum Electron., vol. 43, no. 9, pp. 773-785, Sep 2007. Digital object identifier
  4. J. S. Harris, R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, D. B. Jackrel, E. R. Pickett, T. Sarmiento, L. L. Goddard, V. Lordi, and T. Gugov, "Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications," Physica Status Solidi (b), vol. 244, no. 8, pp. 2707-2729, Jul 2007. Digital object identifier
  5. D. B. Jackrel, S. R. Bank, H. B. Yuen, M. A. Wistey, J. S. Harris, A. J. Ptak, S. W. Johnston, D. J. Friedman, and S. R. Kurtz, "Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy," J. Appl. Phys., vol. 101, pp. 114916-1, Jun 2007. Digital object identifier
  6. H. P. Bae, S. R. Bank, H. B. Yuen, T. Sarmiento, E. R. Pickett, M. A. Wistey, and J. S. Harris, "Temperature dependencies of annealing behaviors of GaInNAsSb/GaNAs quantum wells for long wavelength dilute-nitride lasers," APL, vol. 90, no. 23, pp. 231119, Jun 2007. Digital object identifier
  7. R. Kudrawiec, S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, L. L. Goddard, J. S. Harris, M. Gladysiewicz, M. Motyka, and J. Misiewicz, "Conduction band offset for Ga0. 62In0. 38NxAs0. 991 - xSb0. 009/GaNyAs1 - y/GaAs systems with the ground state transition at 1. 5-1. 65 \µm," APL, vol. 90, no. 13, pp. 131905, Mar 2007. Digital object identifier
  8. R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, and J. Misiewicz, "Fermi level shift in GaInNAsSb/GaAs quantum wells upon annealing studied by contactless electroreflectance," APL, vol. 90, no. 6, pp. 061902, Feb 2007. Digital object identifier
  9. R. Kudrawiec, H. B. Yuen, M. Motyka, M. Gladysiewicz, J. Misiewicz, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "Contactless electroreflectance of GaInNAsSb∕GaAs single quantum wells with indium content of 8%–32%," J. of Appl. Phys., vol. 101, no. 1, pp. 013504, Jan 2007. Digital object identifier

Conference Paper

  1. M. J. Rodwell, E. Lind, Z. Griffith, A. M. Crook, S. R. Bank, U. Singisetti, M. A. Wistey, G. J. Burek, and A. C. Gossard, "On the Feasibility of few-THz Bipolar Transistors," Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM 07. IEEE, pp. 17-21, Sep 2007. Digital object identifier
  2. U. Singisetti, A. M. Crook, E. Lind, M. A. Wistey, J. D. Zimmerman, A. C. Gossard, M. J. Rodwell, and S. R. Bank, "Ultra-Low Resistance Ohmic Contacts to InGaAs/InP," 65th Device Research Conf. (DRC), South Bend, IN, Jun 2007.
  3. Y. Lin, L. F. Lester, S. R. Bank, H. P. Bae, H. B. Yuen, M. A. Wistey, and J. S. Harris, "Monolithic 1. 55-µm GaInNAsSb Quantum Well Mode-Locked Lasers," Conf. on Lasers and Electro Optics (CLEO), Baltimore, MD, May 2007.
  4. (Plenary) M. J. Rodwell, E. Lind, Z. Griffith, S. R. Bank, A. M. Crook, U. Singisetti, M. A. Wistey, G. J. Burek, and A. C. Gossard, "Frequency limits of InP-based integrated circuits," 19th International Conf. on Indium-Phosphide and Related Materials (IPRM), Matsue, Japan, pp. 9-13, May 2007. Digital object identifier