Publications

Displaying 202 publications
Quote related keywords (e.g. "66th Electronic Materials Conf.")

Journal Article

  1. (Invited) S. D. March, A. H. Jones, A. J. Muhowski, S. J. Maddox, M. Ren, and S. R. Bank, "Digital Alloy Staircase Avalanche Photodetectors with Tunneling-enhanced Gain," IEEE Journal of Select Topics in Quantum Electronics, vol. 28, no. 2, pp. 1-13, Mar 2021. Digital object identifier
  2. A. J. Muhowski, S. D. March, S. J. Maddox, D. Wasserman, and S. R. Bank, "Minority carrier lifetimes in digitally-grown, narrow-gap AlInAsSb alloys," Applied Physics Letters, vol. 119, no. 25, pp. 251102, Dec 2021. Digital object identifier
  3. F. He, E. S. Walker, Y. Zhou, R. D. Montano, S. R. Bank, and Y. Wang, "Phase transition in epitaxial bismuth nanofilms," Applied Physics Letters, vol. 117, no. 7, pp. 073103, Aug 2020. Digital object identifier
  4. F. He, E. S. Walker, Y. Zhou, S. E. Muschinske, S. R. Bank, and Y. Wang, "Quantum confinement of coherent acoustic phonons in transferred single-crystalline bismuth nanofilms," Applied Physics Letters, vol. 116, no. 26, pp. 263101, Jun 2020. Digital object identifier
  5. D. Wei, S. J. Maddox, P. Sohr, S. R. Bank, and S. Law, "Enlarged growth window for plasmonic silicon-doped InAs using a bismuth surfactant," Optical Materials Express, vol. 10, no. 2, pp. 302-311, Feb 2020. Digital object identifier
  6. F. He, N. T. Sheehan, S. R. Bank, and Y. Wang, "Giant electron-phonon coupling detected under surface plasmon resonance in Au film," Opt. Lett., vol. 44, no. 18, pp. 4590-4593, Sep 2019. Digital object identifier
  7. J. Park, J. Kang, X. Liu, S. J. Maddox, K. Tang, P. C. McIntrye, S. R. Bank, and M. L. Brongersma, "Dynamic thermal emission control with InAs-based plasmonic metasurfaces," Science Advances, vol. 4, no. 12, Dec 2018. Digital object identifier
  8. (Invited) S. R. Bank, J. C. Campbell, S. J. Maddox, M. Ren, A. K. Rockwell, M. E. Woodson, and S. D. March, "Avalanche Photodiodes Based on the AlInAsSb Materials System," IEEE J. Sel. Top. Quantum Electron., vol. 24, Aug 2018. Digital object identifier
  9. K. Chen, X. Meng, F. He, Y. Zhou, J. Jeong, N. T. Sheehan, S. R. Bank, and Y. Wang, "Comparison between Grating Imaging and Transient Grating Techniques on Measuring Carrier Diffusion in Semiconductor," Nanoscale and Microscale Thermophysical Engineering, vol. 22, no. 4, pp. 348-359, Aug 2018. Digital object identifier
  10. (Invited) S. R. Bank, J. C. Campbell, S. J. Maddox, M. Ren, A. K. Rockwell, M. E. Woodson, and S. D. March, "Avalanche Photodiodes Based on the AlInAsSb Materials System," IEEE Journal of Selected Topics in Quantum Electronics, vol. 24, pp. 1-7, Mar 2018. Digital object identifier
  11. A. K. Rockwell, M. Ren, M. E. Woodson, A. H. Jones, S. D. March, Y. Tan, Y. Yuan, Y. Sun, R. Hool, S. J. Maddox, M. L. Lee, A. W. Ghosh, J. C. Campbell, and S. R. Bank, "Toward Deterministic Construction of Low Noise Avalanche Photodetector Materials," Applied Physics Letters, vol. 113, no. 10, pp. 102106, Dec 2018. Digital object identifier
  12. J. Jeong, K. Chen, E. S. Walker, N. Roy, F. He, P. Liu, G. Willson, M. Cullinan, S. R. Bank, and Y. Wang, "In-Plane Thermal Conductivity Measurement with Nanosecond Grating Imaging Technique," Nanoscale and Microscale Thermophysical Engineering, vol. 22, no. 2, pp. 83-96, Dec 2017. Digital object identifier
  13. A. H. Jones, Y. Yuan, M. Ren, S. J. Maddox, S. R. Bank, and J. C. Campbell, "AlxIn1-xAsySb1-y photodiodes with low avalanche breakdown temperature dependence," Optics Express, vol. 25, no. 20, pp. 24340–24345, Oct 2017. Digital object identifier
  14. M. Ren, S. J. Maddox, M. E. Woodson, J. Chen, S. R. Bank, and J. C. Campbell, "Characteristics of AlxIn1-xAsySb1-y (x:0. 3~0. 7) Avalanche Photodiodes," IEEE/OSA Journal of Lightwave Technology, vol. 35, pp. 2380, Jun 2017. Digital object identifier
  15. K. Chen, N. T. Sheehan, F. He, X. Meng, S. C. Mason, S. R. Bank, and Y. Wang, "Measurement of Ambipolar Diffusion Coefficient of Photoexcited Carriers with Ultrafast Reflective Grating-Imaging Technique," ACS Photonics, vol. 4, pp. 1440-1446, May 2017. Digital object identifier
  16. K. Chen, M. N. Yogeesh, Y. Huang, S. Zhang, F. He, X. Meng, S. Fang, N. T. Sheehan, T. H. Tao, S. R. Bank, J. Lin, D. Akinwande, P. Sutter, T. Lai, and Y. Wang, "Non-destructive measurement of photoexcited carrier transport in graphene with ultrafast grating imaging technique," Carbon, vol. 107, pp. 233-239, Oct 2016. Digital object identifier
  17. S. J. Maddox, S. D. March, and S. R. Bank, "Broadly Tunable AlInAsSb Digital Alloys Grown on GaSb," ACS Crystal Growth \& Design, vol. 16, no. 7, pp. 3582-3586, Jun 2016. Digital object identifier
  18. H. R. Seren, J. Zhang, G. R. Keiser, S. J. Maddox, X. Zhao, K. Fan, S. R. Bank, X. Zhang, and R. D. Averitt, "Nonlinear terahertz devices utilizing semiconducting plasmonic metamaterials," Light: Science & Applications, vol. 5, no. 5, pp. e16078, May 2016. Digital object identifier
  19. M. Ren, S. J. Maddox, M. E. Woodson, Y. Chen, S. R. Bank, and J. C. Campbell, "AlInAsSb separate absorption, charge, and multiplication avalanche photodiodes," Applied Physics Letters, vol. 108, no. 19, pp. 191108, May 2016. Digital object identifier
  20. (Invited) S. J. Maddox, M. Ren, M. E. Woodson, S. R. Bank, and J. C. Campbell, "Recent progress in avalanche photodiodes for sensing in the IR spectrum," Proc. SPIE, vol. 9854, pp. 985405-985405, Apr 2016. Digital object identifier
  21. C. S. Schulze, X. Huang, C. Prohl, V. Fullert, S. Rybank, S. J. Maddox, S. D. March, S. R. Bank, M. L. Lee, and A. Lenz, "Atomic structure and stoichiometry of In(Ga)As/GaAs quantum dots grown on an exact-oriented GaP/Si(001) substrate," APL, vol. 108, no. 14, pp. 143101, Apr 2016. Digital object identifier
  22. M. E. Woodson, M. Ren, S. J. Maddox, Y. Chen, S. R. Bank, and J. C. Campbell, "Low-noise AlInAsSb avalanche photodiode," APL, vol. 108, no. 8, pp. 081102, Feb 2016. Digital object identifier
  23. M. Ren, S. J. Maddox, Y. Chen, M. E. Woodson, J. C. Campbell, and S. R. Bank, "AlInAsSb/GaSb staircase avalanche photodiode," APL, vol. 108, no. 8, pp. 081101, Feb 2016. Digital object identifier
  24. (Invited) S. D. Sifferman, H. P. Nair, R. Salas, N. T. Sheehan, S. J. Maddox, A. M. Crook, and S. R. Bank, "Highly strained mid-infrared type-I diode lasers on GaSb," IEEE J. Sel. Top. Quantum Electron., vol. 21, no. 6, pp. 248-257, Nov 2015. Digital object identifier
  25. V. D. Dasika, E. M. Krivoy, H. P. Nair, S. J. Maddox, K. W. Park, D. Jung, M. L. Lee, E. T. Yu, and S. R. Bank, "Increased InAs Quantum Dot Size and Density using Bismuth as a Surfactant," APL, vol. 105, no. 25, pp. 253104, Dec 2014. Digital object identifier
  26. M. Wagner, A. S. McLeod, S. J. Maddox, Z. Fei, M. Liu, R. D. Averitt, M. M. Fogler, S. R. Bank, F. Keilmann, and D. N. Basov, "Ultrafast Dynamics of Surface Plasmons in InAs by Time-Resolved Infrared Nanospectroscopy," Nano Lett., vol. 14, no. 8, pp. 4529, Aug 2014. Digital object identifier
  27. W. Sun, Z. Lu, X. Zheng, J. C. Campbell, S. J. Maddox, H. P. Nair, and S. R. Bank, "High-Gain InAs Avalanche Photodiodes," IEEE J. of Quantum Electron., vol. 49, no. 2, pp. 154, Feb 2013. Digital object identifier
  28. E. M. Krivoy, S. Rahimi, H. P. Nair, R. Salas, S. J. Maddox, D. J. Ironside, Y. Jiang, G. Kelp, G. Shvets, D. Akinwande, and S. R. Bank, "Growth and characterization of single crystal rocksalt LaAs using LuAs barrier layers," APL, vol. 101, no. 22, pp. 221908, Nov 2012. Digital object identifier
  29. S. J. Maddox, W. Sun, Z. Lu, H. P. Nair, J. C. Campbell, and S. R. Bank, "Enhanced Low-Noise Gain from InAs Avalanche Photodiodes with Reduced Dark Current and Background Doping," APL, vol. 101, no. 15, pp. 151124, Oct 2012. Digital object identifier
  30. E. M. Krivoy, H. P. Nair, A. M. Crook, S. Rahimi, S. J. Maddox, R. Salas, D. A. Ferrer, V. D. Dasika, D. Akinwande, and S. R. Bank, "Growth and characterization of LuAs films and nanostructures," APL, vol. 101, no. 14, pp. 141910, Oct 2012. Digital object identifier
  31. A. M. Mintairov, K. Sun, J. L. Merz, H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, G. Peake, A. Egorov, V. Ustinov, R. Kudrawiec, and J. Misiewicz, "Atomic arrangement and emission properties of GaAs(In, Sb)N quantum wells," Semic. Sci. Technol., vol. 24, no. 7, pp. 075013, Jul 2009. Digital object identifier
  32. R. Kudrawiec, P. Poloczek, J. Misiewicz, H. P. Bae, T. Sarmiento, S. R. Bank, H. B. Yuen, M. A. Wistey, and J. S. Harris, "Contactless electroreflectance of GaInNAsSb/GaNAs/GaAs quantum wells emitting at 1. 5\—1. 65 \µm: Broadening of the fundamental transition," APL, vol. 94, no. 3, pp. 031903, Jan 2009. Digital object identifier
  33. R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, and J. Misiewicz, "On the Fermi level pinning in as-grown GaInNAs(Sb)/GaAs quantum wells with indium content of 8%\—32%," J. Appl. Phys., vol. 104, no. 3, pp. 033526, Aug 2008. Digital object identifier
  34. Y. Xin, .C . Y. Lin, Y. Li, H. P. Bae, H. B. Yuen, M. A. Wistey, J. S. Harris, S. R. Bank, and L. F. Lester, "Monolithic 1. 55 \µm GaInNAsSb quantum well passively modelocked lasers," Electron. Lett., vol. 44, no. 9, pp. 581-582, Apr 2008. Digital object identifier
  35. R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, and J. Misiewicz, "Contactless electroreflectance approach to study the Fermi level position in GaInNAs/GaAs quantum wells," J. Appl. Phys., vol. 102, no. 11, pp. 113501, Dec 2007. Digital object identifier
  36. S. R. Bank, H. P. Bae, L. L. Goddard, H. B. Yuen, M. A. Wistey, R. Kudrawiec, and J. S. Harris, "Recent Progress on 1. 55-\µm Dilute-Nitride Lasers," IEEE J. Quantum Electron., vol. 43, no. 9, pp. 773-785, Sep 2007. Digital object identifier
  37. M. M. Oye, T. J. Mattord, G. A. Hallock, S. R. Bank, M. A. Wistey, J. M. Reifsnider, A. J. Ptak, H. B. Yuen, J. S. Harris, and A. L. Holmes Jr., "Effects of different plasma species (atomic N, metastable N2*, and ions) on the optical properties of dilute nitride materials grown by plasma-assisted molecular-beam epitaxy," APL, vol. 91, no. 19, pp. 191903, Sep 2007. Digital object identifier
  38. J. S. Harris, R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, D. B. Jackrel, E. R. Pickett, T. Sarmiento, L. L. Goddard, V. Lordi, and T. Gugov, "Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications," Physica Status Solidi (b), vol. 244, no. 8, pp. 2707-2729, Jul 2007. Digital object identifier
  39. H. P. Bae, S. R. Bank, H. B. Yuen, T. Sarmiento, E. R. Pickett, M. A. Wistey, and J. S. Harris, "Temperature dependencies of annealing behaviors of GaInNAsSb/GaNAs quantum wells for long wavelength dilute-nitride lasers," APL, vol. 90, no. 23, pp. 231119, Jun 2007. Digital object identifier
  40. D. B. Jackrel, S. R. Bank, H. B. Yuen, M. A. Wistey, J. S. Harris, A. J. Ptak, S. W. Johnston, D. J. Friedman, and S. R. Kurtz, "Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy," J. Appl. Phys., vol. 101, pp. 114916-1, Jun 2007. Digital object identifier
  41. R. Kudrawiec, S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, L. L. Goddard, J. S. Harris, M. Gladysiewicz, M. Motyka, and J. Misiewicz, "Conduction band offset for Ga0. 62In0. 38NxAs0. 991 - xSb0. 009/GaNyAs1 - y/GaAs systems with the ground state transition at 1. 5-1. 65 \µm," APL, vol. 90, no. 13, pp. 131905, Mar 2007. Digital object identifier
  42. R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, and J. Misiewicz, "Fermi level shift in GaInNAsSb/GaAs quantum wells upon annealing studied by contactless electroreflectance," APL, vol. 90, no. 6, pp. 061902, Feb 2007. Digital object identifier
  43. Y. Xin, A. Stintz, H. Cao, L. Zhang, A. Gray, S. R. Bank, M. Osinski, J. S. Harris, and L. F. Lester, "Monolithic passively mode-locked lasers using quantum-dot or quantum-well materials grown on GaAs substrates," Proc. SPIE, Proc. SPIE, San Jose, CA, vol. 6468, pp. 46, Jan 2007.
  44. R. Kudrawiec, H. B. Yuen, M. Motyka, M. Gladysiewicz, J. Misiewicz, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "Contactless electroreflectance of GaInNAsSb∕GaAs single quantum wells with indium content of 8%–32%," J. of Appl. Phys., vol. 101, no. 1, pp. 013504, Jan 2007. Digital object identifier
  45. S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, A. Moto, and J. S. Harris, "Enhanced luminescence in GaInNAsSb quantum wells through variation of the arsenic and antimony fluxes," APL, vol. 88, no. 24, pp. 241923, Jun 2006. Digital object identifier
  46. R. Kudrawiec, M. Gladysiewicz, J. Misiewicz, H. B. Yuen, S. R. Bank, M. A. Wistey, H. P. Bae, and J. S. Harris, "Interband transitions in GaN0. 02As0. 98-xSbx/GaAs (0<x<0. 11) single quantum wells studied by contactless electroreflectance spectroscopy," Phys. Rev. B, vol. 73, pp. 245413, Jun 2006. Digital object identifier
  47. S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, and J. S. Harris, "Overannealing effects in GaInNAs(Sb) alloys and their importance to laser applications," APL, vol. 88, no. 22, pp. 221115, Dec 2006. Digital object identifier
  48. R. Kudrawiec, M. Motyka, M. Gladysiewicz, J. Misiewicz, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "Band gap discontinuity in Ga0. 9In0. 1N0. 027As0. 973 - xSbx/GaAs single quantum wells with 0 ≤ x < 0. 06 studied by contactless electroreflectance spectroscopy," APL, vol. 88, no. 22, pp. 221113, May 2006. Digital object identifier
  49. H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "Effects of strain on the optimal annealing temperature of GaInNAsSb quantum wells," APL, vol. 88, no. 22, pp. 221913, May 2006. Digital object identifier
  50. M. A. Wistey, S. R. Bank, H. P. Bae, H. B. Yuen, E. R. Pickett, L. L. Goddard, and J. S. Harris, "GaInNAsSb/GaAs vertical cavity surface emitting lasers at 1534 nm," Electron. Lett., vol. 42, no. 5, pp. 282-283, Mar 2006. Digital object identifier