Publications

Displaying 36 publications
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Journal Article

  1. Q. Meng, S. R. Bank, and M. A. Wistey, "Undoing Band Anticrossing in Highly Mismatched Alloys by Atom Arrangement," Journal of Applied Physics, vol. 135, no. 11, Mar 2024. Digital object identifier
  2. R. Ramesh, T. Hsieh, A. M. Skipper, Q. Meng, K. C. Wen, F. Shafiei, M. A. Wistey, M. C. Downer, J. B. Khurgin, and S. R. Bank, "Interband second-order nonlinear optical susceptibility of asymmetric coupled quantum wells," Applied Physics Letters, vol. 123, no. 25, Dec 2023. Digital object identifier
  3. T. Dey, A. W. Arbogast, Q. Meng, M. Shamim. Reza, A. J. Muhowski, J. J. P. Cooper, E. Ozdemir, F. U. Naab, T. Borrely, J. Anderson, R. S. Goldman, D. Wasserman, S. R. Bank, M. W. Holtz, E. L. Piner, and M. A. Wistey, "Influence of H on Sn incorporation in GeSnC alloys grown using molecular beam epitaxy," Journal of Applied Physics, vol. 134, no. 19, Nov 2023. Digital object identifier
  4. Q. Meng, R. H. El-Jaroudi, R. C. White, T. Dey, M. Shamim. Reza, S. R. Bank, and M. A. Wistey, "Effects of B and In on the Band Structure of BGa(In)As Alloys," Journal of Applied Physics, vol. 132, no. 19, pp. 193104, Nov 2022. Digital object identifier
  5. I. A. Gulyas, C. A. Stephenson, Q. Meng, S. R. Bank, and M. A. Wistey, "The Carbon State in Dilute Germanium Carbides," Journal of Applied Physics, vol. 129, no. 5, pp. 055701, Feb 2021. Digital object identifier
  6. J. S. Harris, R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, D. B. Jackrel, E. R. Pickett, T. Sarmiento, L. L. Goddard, V. Lordi, and T. Gugov, "Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications," Physica Status Solidi (b), vol. 244, no. 8, pp. 2707-2729, Jul 2007. Digital object identifier
  7. S. R. Bank, H. B. Yuen, M. A. Wistey, V. Lordi, H. P. Bae, and J. S. Harris, "Effects of growth temperature on the structural and optical properties of 1. 55 \µm GaInNAsSb quantum wells grown on GaAs," APL, vol. 87, no. 2, pp. 021908, Jul 2005. Digital object identifier
  8. S. R. Bank, M. A. Wistey, H. B. Yuen, V. Lordi, V. Gambin, and J. S. Harris, "Effects of antimony and ion damage on carrier localization in molecular-beam-epitaxy-grown GaInNAs," J. Vac. Sci. Technol. B, vol. 23, no. 3, pp. 1320-1323, Jun 2005. Digital object identifier
  9. V. Lordi, H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, and S. Friedrich, "Nearest-neighbor distributions in Ga1-xInxNyAs1-y and Ga1-xInxNyAs1-y-zSbz thin films upon annealing," Phys. Rev. B, vol. 71, no. 12, pp. 125309, Mar 2005. Digital object identifier
  10. V. Lordi, H. B. Yuen, S. R. Bank, and J. S. Harris, "Quantum-confined Stark effect of GaInNAs(Sb) quantum wells at 1300\—1600 nm," APL, vol. 85, no. 6, pp. 902-904, Aug 2004. Digital object identifier
  11. S. R. Bank, M. A. Wistey, L. L. Goddard, H. B. Yuen, V. Lordi, and J. S. Harris, "Low-threshold continuous-wave 1. 5-\µm GaInNAsSb lasers grown on GaAs," IEEE J. Quantum Electron., vol. 40, no. 6, pp. 656-664, Jun 2004. Digital object identifier
  12. T. Chung, S. R. Bank, J. Epple, and K. Chien. Hsieh, "Current gain dependence on subcollector and etch-stop doping in InGaP/GaAs HBTs," IEEE Trans. Electron Devices, vol. 48, no. 5, pp. 835-839, May 2001. Digital object identifier
  13. T. Chung, S. R. Bank, and K. Chien. Hsieh, "High DC current gain InGaP/GaAs HBTs grown by LP-MOCVD," Electron. Lett., vol. 36, no. 22, pp. 1885-1886, Oct 2000. Digital object identifier

Conference Paper

  1. Q. Meng, R. H. El-Jaroudi, R. C. White, H. S. Maczko, T. Dey, R. Kudrawiec, S. R. Bank, and M. A. Wistey, "Bandgap Evolution in B-III-V Alloys," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  2. Q. Meng, R. C. White, R. H. El-Jaroudi, T. Dey, L. Gelczuk, R. Kudrawiec, S. R. Bank, and M. A. Wistey, "Improvement in Optical Quality Upon Annealing in B-III-V Alloys," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  3. T. Dey, A. W. Arbogast, Q. Meng, M. Reaz. Munna, K. Alam, S. R. Bank, and M. A. Wistey, "Influences of Carbon Tetrabromide (CBr4) and Tin Fluxes on GeCSn Growth," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  4. K. C. Wen, P. Devaney, R. Ramesh, A. F. Ricks, Q. Meng, Z. Sakotic, D. Wasserman, J. B. Khurgin, and S. R. Bank, "Semiconductor Quantum Well Structures with Large Third-order Interband Optical Nonlinearities," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  5. A. F. Ricks, R. C. White, Q. Meng, H. Hijazi, M. A. Wistey, and S. R. Bank, "Bismuth Incorporation in AlInSb for an Improved Barrier Layer Material," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  6. A. F. Ricks, R. C. White, Q. Meng, M. K. Bergthold, M. A. Wistey, D. Wasserman, and S. R. Bank, "Bismuth Incorporation in AlInSb for Wide-Bandgap Barriers on InSb," 65th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2023.
  7. R. Ramesh, T. Hsieh, A. M. Skipper, Q. Meng, K. C. Wen, M. A. Wistey, F. Shafiei, M. W. Downer, J. B. Khurgin, and S. R. Bank, "Engineering of the Interband Second Order Optical Nonlinearity with Asymmetric Coupled Quantum Wells," 65th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2023.
  8. Q. Meng, R. C. White, R. H. El-Jaroudi, T. Dey, S. R. Bank, and M. A. Wistey, "Atom Rearrangement in BGa(In)As Alloys Under Annealing," 65th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2023.
  9. A. F. Ricks, R. C. White, Q. Meng, M. K. Bergthold, M. A. Wistey, and S. R. Bank, "Growth and characterization of AlInSbBi for wide-bandgap barriers on InSb," 64th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2022.
  10. R. C. White, Q. Meng, M. Lopez, A. Ponnekanti, L. J. Nordin, A. J. Muhowski, D. Wasserman, S. R. Bank, and M. A. Wistey, "Growth and Characterization of InSbBi: A (Potentially) Not So Highly Mismatched Alloy for Wavelength Extension on InSb," 21st International Conference on Molecular Beam Epitaxy (ICMBE), Virtual, Sep 2021.
  11. Q. Meng, R. H. El-Jaroudi, R. C. White, T. Dey, M. Shamim. Reza, S. R. Bank, and M. A. Wistey, "Effect of B Distribution on the Band Structure of BGa(In)As Alloys," 63nd Electronic Materials Conf. (EMC), Virtual, Jun 2021.
  12. R. H. El-Jaroudi, K. M. McNicholas, P. Dhingra, R. C. White, Q. Meng, M. A. Wistey, M. L. Lee, and S. R. Bank, "B-III-V/GaAs quantum wells: towards 1. 55 \&microm emitters on GaAs," 62nd Electronic Materials Conf. (EMC), Columbus, OH, Jun 2020.
  13. R. C. White, R. H. El-Jaroudi, Q. Meng, P. Dhingra, M. L. Lee, S. R. Bank, and M. A. Wistey, "Mechanism for Blueshift with Annealing in Near-Infrared B-III-V Alloys on GaAs," 62nd Electronic Materials Conf. (EMC), Columbus, OH, Jun 2020.
  14. Q. Meng, R. H. El-Jaroudi, I. A. Gulyas, R. C. White, K. M. McNicholas, T. Dey, S. R. Bank, and M. A. Wistey, "Effect of B-In interactions on the band structure and optical properties of BGa(In)As," 62nd Electronic Materials Conf. (EMC), Columbus, OH, Jun 2020.
  15. S. R. Bank, H. B. Yuen, M. A. Wistey, V. Lordi, H. P. Bae, and J. S. Harris, "Effects of Growth Temperature on the Optical Behavior of GaInNAsSb Alloys," 47th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2005.
  16. S. R. Bank, M. A. Wistey, H. B. Yuen, V. Lordi, V. Gambin, and J. S. Harris, "Effects of Antimony and Ion Damage on Carrier Localization in MBE-Grown GaInNAs," North American Molecular Beam Epitaxy Conf. (NAMBE), Banff, Alberta, Canada, Oct 2004.
  17. S. R. Bank, V. Lordi, M. A. Wistey, H. B. Yuen, and J. S. Harris, "Temperature Dependent Behavior of GaInNAs(Sb) Alloys Grown on GaAs," 46th Electronic Materials Conf. (EMC), Notre Dame, IN, Jun 2004.
  18. V. Lordi, S. R. Bank, H. B. Yuen, M. A. Wistey, and J. S. Harris, "Electroabsorption and Band Edge Optical Properties of GaInNAsSb Quantum Wells Around 1550nm," 46th Electronic Materials Conf. (EMC), Notre Dame, IN, Jun 2004.
  19. V. Lordi, H. B. Yuen, S. R. Bank, M. A. Wistey, and J. S. Harris, "Electroabsorption of GaInNAs and GaInNAsSb quantum wells at 1300 and 1550 nm," Conf. on Lasers and Electro-Optics (CLEO), San Francisco, CA, May 2004.
  20. V. Lordi, H. B. Yuen, S. R. Bank, M. A. Wistey, and J. S. Harris, "Electroabsorption Properties of GaInNAs(Sb) Quantum Wells at 1300-1600nm," Materials Research Symposium (MRS), San Francisco, CA, May 2004.
  21. H. B. Yuen, V. Lordi, S. R. Bank, M. A. Wistey, J. S. Harris, and A. Moto, "Analysis of Material Properties of GaNAs(Sb) Grown by MBE," Materials Research Symposium (MRS), Boston, MA, Dec 2003.
  22. V. Gambin, V. Lordi, W. Ha, M. A. Wistey, K. Volz, S. R. Bank, H. B. Yuen, and J. S. Harris, "High Intensity 1. 3\—1. 6 \µm Luminescence and Structural Changes on Anneal from MBE Grown (Ga,In)(N,As,Sb)," International Conf. on Molecular Beam Epitaxy (MBE), San Fancisco, CA, Sep 2002.
  23. V. Lordi, V. Gambin, W. Ha, S. R. Bank, and J. S. Harris, "Examination of N Incorporation into GaInNAs," Materials Research Symposium (MRS), April, Apr 2002.