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Displaying 66 publications
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Journal Article

  1. J. Zheng, S. Z. Ahmed, Y. Yuan, A. H. Jones, Y. Tan, A. K. Rockwell, S. D. March, S. R. Bank, A. W. Ghosh, and J. C. Campbell, "Full band Monte Carlo simulation of AlInAsSb digital alloys," InfoMat, vol. 2, no. 06, pp. 1236-1240, Nov 2020. Digital object identifier
  2. J. Zheng, S. Z. Ahmed, Y. Yuan, A. H. Jones, Y. Tan, A. K. Rockwell, S. D. March, S. R. Bank, A. W. Ghosh, and J. C. Campbell, "Full band Monte Carlo simulation of AlInAsSb digital alloys," InfoMat, vol. 2, no. 6, pp. 1236-1240, Mar 2020. Digital object identifier
  3. A. H. Jones, A. K. Rockwell, S. D. March, Y. Yuan, S. R. Bank, and J. C. Campbell, "High Gain, Low Dark Current Al0. 8In0. 2As0. 23Sb0. 77 Avalanche Photodiodes," IEEE Photonics Technology Letters, vol. 31, no. 24, pp. 1948-1951, Dec 2019. Digital object identifier
  4. J. Zheng, Y. Yuan, Y. Tan, Y. Peng, A. K. Rockwell, S. R. Bank, A. W. Ghosh, and J. C. Campbell, "Simulations for InAlAs digital alloy avalanche photodiodes," Applied Physics Letters, vol. 115, no. 17, pp. 171106, Oct 2019. Digital object identifier
  5. Y. Yuan, J. Zheng, K. Sun, A. H. Jones, A. K. Rockwell, S. D. March, Y. Shen, S. R. Bank, and J. C. Campbell, "Stark‐Localization‐Limited Franz–Keldysh Effect in InAlAs Digital Alloys," physica status solidi (RRL) – Rapid Research Letters, vol. 13, no. 9, pp. 1900272, Jun 2019. Digital object identifier
  6. Y. Yuan, A. K. Rockwell, Y. Peng, J. Zheng, S. D. March, A. H. Jones, S. R. Bank, and J. C. Campbell, "Comparison of Different Period Digital Alloy Al0. 7InAsSb Avalanche Photodiodes," Journal of Lightwave Technology, vol. 37, no. 14, pp. 3647-3654, May 2019. Digital object identifier
  7. Y. Yuan, J. Zheng, A. K. Rockwell, S. D. March, S. R. Bank, and J. C. Campbell, "AlInAsSb Impact Ionization Coefficients," IEEE Photonics Technology Letters, vol. 31, no. 4, Feb 2019. Digital object identifier
  8. J. Zheng, Y. Yuan, Y. Tan, Y. Peng, A. K. Rockwell, S. R. Bank, A. W. Ghosh, and J. C. Campbell, "Digital Alloy InAlAs Avalanche Photodiodes," Journal of Lightwave Technology, vol. 36, no. 17, pp. 3580-3585, Sep 2018. Digital object identifier
  9. Y. Yuan, J. Zheng, Y. Tan, Y. Peng, A. K. Rockwell, S. R. Bank, A. W. Ghosh, and J. C. Campbell, "Temperature dependence of the ionization coefficients of InAlAs and AlGaAs digital alloys," Photon. Res., vol. 6, no. 8, pp. 794-799, Aug 2018. Digital object identifier
  10. A. K. Rockwell, Y. Yuan, A. H. Jones, S. D. March, S. R. Bank, and J. C. Campbell, "Al0. 8In0. 2As0. 23Sb0. 77 Avalanche Photodiodes," IEEE Photonics Technology Letters, vol. 30, pp. 1048-1051, Jun 2018. Digital object identifier
  11. A. K. Rockwell, M. Ren, M. E. Woodson, A. H. Jones, S. D. March, Y. Tan, Y. Yuan, Y. Sun, R. Hool, S. J. Maddox, M. L. Lee, A. W. Ghosh, J. C. Campbell, and S. R. Bank, "Toward Deterministic Construction of Low Noise Avalanche Photodetector Materials," Applied Physics Letters, vol. 113, no. 10, pp. 102106, Dec 2018. Digital object identifier
  12. A. H. Jones, Y. Yuan, M. Ren, S. J. Maddox, S. R. Bank, and J. C. Campbell, "AlxIn1-xAsySb1-y photodiodes with low avalanche breakdown temperature dependence," Optics Express, vol. 25, no. 20, pp. 24340–24345, Oct 2017. Digital object identifier
  13. S. R. Bank, H. P. Bae, L. L. Goddard, H. B. Yuen, M. A. Wistey, R. Kudrawiec, and J. S. Harris, "Recent Progress on 1. 55-\µm Dilute-Nitride Lasers," IEEE J. Quantum Electron., vol. 43, no. 9, pp. 773-785, Sep 2007. Digital object identifier
  14. J. S. Harris, R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, D. B. Jackrel, E. R. Pickett, T. Sarmiento, L. L. Goddard, V. Lordi, and T. Gugov, "Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications," Physica Status Solidi (b), vol. 244, no. 8, pp. 2707-2729, Jul 2007. Digital object identifier
  15. R. Kudrawiec, S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, L. L. Goddard, J. S. Harris, M. Gladysiewicz, M. Motyka, and J. Misiewicz, "Conduction band offset for Ga0. 62In0. 38NxAs0. 991 - xSb0. 009/GaNyAs1 - y/GaAs systems with the ground state transition at 1. 5-1. 65 \µm," APL, vol. 90, no. 13, pp. 131905, Mar 2007. Digital object identifier
  16. M. A. Wistey, S. R. Bank, H. P. Bae, H. B. Yuen, E. R. Pickett, L. L. Goddard, and J. S. Harris, "GaInNAsSb/GaAs vertical cavity surface emitting lasers at 1534 nm," Electron. Lett., vol. 42, no. 5, pp. 282-283, Mar 2006. Digital object identifier
  17. S. R. Bank, H. P. Bae, H. B. Yuen, M. A. Wistey, L. L. Goddard, and J. S. Harris, "Room-temperature continuous-wave 1. 55 \µm GaInNAsSb laser on GaAs," Electron. Lett., vol. 42, no. 3, pp. 156-157, Feb 2006. Digital object identifier
  18. S. R. Bank, L. L. Goddard, M. A. Wistey, H. B. Yuen, and J. S. Harris, "On the temperature sensitivity of 1. 5-\µm GaInNAsSb lasers," IEEE J. Sel. Topics Quantum Electron., vol. 11, no. 5, pp. 1089-1098, Sep 2005. Digital object identifier
  19. S. R. Bank, H. B. Yuen, M. A. Wistey, V. Lordi, H. P. Bae, and J. S. Harris, "Effects of growth temperature on the structural and optical properties of 1. 55 \µm GaInNAsSb quantum wells grown on GaAs," APL, vol. 87, no. 2, pp. 021908, Jul 2005. Digital object identifier
  20. S. R. Bank, M. A. Wistey, H. B. Yuen, V. Lordi, V. Gambin, and J. S. Harris, "Effects of antimony and ion damage on carrier localization in molecular-beam-epitaxy-grown GaInNAs," J. Vac. Sci. Technol. B, vol. 23, no. 3, pp. 1320-1323, Jun 2005. Digital object identifier
  21. S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, H. P. Bae, and J. S. Harris, "Molecular-beam epitaxy growth of low-threshold cw GaInNAsSb lasers at 1. 5 \µm," J. Vac. Sci. Technol. B, vol. 23, no. 3, pp. 1337-1340, Jun 2005. Digital object identifier
  22. M. A. Wistey, S. R. Bank, H. B. Yuen, L. L. Goddard, T. Gugov, and J. S. Harris, "Protecting wafer surface during plasma ignition using an arsenic cap," J. Vac. Sci. Technol. B, vol. 23, no. 3, pp. 1324-1327, May 2005. Digital object identifier
  23. L. L. Goddard, S. R. Bank, M. A. Wistey, H. B. Yuen, and J. S. Harris, "High performance GaInNAsSb/GaAs lasers at 1. 5 \µm," Proc. SPIE, vol. 2, pp. 2-5, Apr 2005. Digital object identifier
  24. L. L. Goddard, S. R. Bank, M. A. Wistey, H. B. Yuen, Z. Rao, and J. S. Harris, "Recombination, gain, band structure, efficiency, and reliability of 1. 5-\µm GaInNAsSb/GaAs lasers," J. Appl. Phys., vol. 97, no. 8, pp. 083101, Apr 2005. Digital object identifier
  25. V. Lordi, H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, and S. Friedrich, "Nearest-neighbor distributions in Ga1-xInxNyAs1-y and Ga1-xInxNyAs1-y-zSbz thin films upon annealing," Phys. Rev. B, vol. 71, no. 12, pp. 125309, Mar 2005. Digital object identifier
  26. D. Gollub, M. Kamp, A. Forchel, J. Seufert, S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, and J. S. Harris, "Continuous-wave operation of GaInNAsSb distributed feedback lasers at 1. 5 \µm," Electron. Lett., vol. 40, no. 23, pp. 1487-1488, Nov 2004. Digital object identifier
  27. S. R. Bank, M. A. Wistey, L. L. Goddard, H. B. Yuen, H. P. Bae, and J. S. Harris, "High-performance 1. 5 \µm GaInNAsSb lasers grown on GaAs," Electron. Lett., vol. 40, no. 19, pp. 1186-1187, Sep 2004. Digital object identifier
  28. V. Lordi, H. B. Yuen, S. R. Bank, and J. S. Harris, "Quantum-confined Stark effect of GaInNAs(Sb) quantum wells at 1300\—1600 nm," APL, vol. 85, no. 6, pp. 902-904, Aug 2004. Digital object identifier
  29. S. R. Bank, M. A. Wistey, L. L. Goddard, H. B. Yuen, V. Lordi, and J. S. Harris, "Low-threshold continuous-wave 1. 5-\µm GaInNAsSb lasers grown on GaAs," IEEE J. Quantum Electron., vol. 40, no. 6, pp. 656-664, Jun 2004. Digital object identifier
  30. M. A. Wistey, S. R. Bank, H. B. Yuen, L. L. Goddard, and J. S. Harris, "GaInNAs(Sb) vertical-cavity surface-emitting lasers at 1. 460 \µm," J. Vac. Sci. Technol. B, vol. 22, no. 3, pp. 1562-1564, May 2004. Digital object identifier
  31. M. A. Wistey, S. R. Bank, H. B. Yuen, L. L. Goddard, and J. S. Harris, "Monolithic, GaInNAsSb VCSELs at 1. 46 \µm on GaAs by MBE," Electron. Lett., vol. 39, no. 25, pp. 1822-1823, Dec 2003. Digital object identifier
  32. S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, W. Ha, and J. S. Harris, "Low-threshold CW GaInNAsSb/GaAs laser at 1. 49 \µm," Electron. Lett., vol. 39, no. 20, pp. 1445-1446, Oct 2003. Digital object identifier
  33. S. R. Bank, W. Ha, V. Gambin, M. A. Wistey, H. B. Yuen, L. L. Goddard, S. Kim, and J. S. Harris, "1. 5 \µm GaInNAs(Sb) lasers grown on GaAs by MBE," J. Cryst. Growth, vol. 251, no. 1-4, pp. 367-371, Apr 2003. Digital object identifier

Conference Paper

  1. (Invited) S. R. Bank, X. Xue, S. D. March, Y. Yuan, A. H. Jones, A. K. Rockwell, and J. C. Campbell, "Towards Single Photon Counting at Room Temperature with Digital Alloy Avalanche Photodiodes," IEEE Research and Applications of Photonics in Defense (RAPID), Miramar Beach, FL, Aug 2020.
  2. A. K. Rockwell, A. H. Jones, Y. Yuan, X. Xue, S. D. March, J. C. Campbell, and S. R. Bank, "Temperature Stability of III-V Digital Alloy Bandgaps," 62nd Electronic Materials Conf. (EMC), Columbus, OH, Jun 2020.
  3. A. K. Rockwell, M. Ren, M. E. Woodson, A. H. Jones, S. D. March, Y. Tan, Y. Yuan, S. J. Maddox, A. W. Ghosh, J. C. Campbell, and S. R. Bank, "Band Structure Influence on Noise Properties of III-V Digital Alloys," 61st Electronic Materials Conf. (EMC), Ann Arbor, MI, Jun 2019.
  4. S. R. Bank, J. C. Campbell, S. J. Maddox, A. K. Rockwell, M. E. Woodson, M. Ren, A. H. Jones, S. D. March, J. Zheng, and Y. Yuan, "Digital alloy growth of low-noise avalanche photodiodes," IEEE RAPID, Miramar Beach, FL, Aug 2018.
  5. (Invited) S. R. Bank, J. C. Campbell, S. J. Maddox, M. Ren, A. K. Rockwell, M. E. Woodson, A. H. Jones, S. D. March, J. Zheng, and Y. Yuan, "Low-Noise Staircase and Conventional Avalanche Photodiodes," International Nano-Optoelectronics Workshop (iNOW), Berkeley, CA, Jul 2018.
  6. A. K. Rockwell, Y. Yuan, S. D. March, A. H. Jones, M. E. Woodson, M. Ren, S. D. Sifferman, S. J. Maddox, J. C. Campbell, and S. R. Bank, "III-V Digital Alloys for Mid-IR Photodetectors," 60th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2018.
  7. M. Ren, Y. Yuan, A. H. Jones, S. J. Maddox, M. E. Woodson, S. R. Bank, and J. C. Campbell, "Operation stability study of AlInAsSb avalanche photodiodes," 2017 IEEE Photonics Conference (IPC), Orlando, FL, Oct 2017.
  8. S. R. Bank, H. P. Bae, L. L. Goddard, H. B. Yuen, M. A. Wistey, and J. S. Harris, "Very Low-Threshold 1. 55-\µm Dilute-Nitride Lasers," 64th Device Research Conf. (DRC), Jun 2006.
  9. S. R. Bank, H. P. Bae, H. B. Yuen, M. A. Wistey, L. L. Goddard, J. S. Harris, R. Kudrawiec, M. Gladysiewicz, M. Motyka, and J. Misiewicz, "Low-Threshold Continuous-Wave 1. 55-\µm GaInNAsSb lasers," Conf. on Lasers and Electro Optics (CLEO), Long Beach, CA, May 2006.
  10. S. R. Bank, H. P. Bae, H. B. Yuen, L. L. Goddard, M. A. Wistey, T. Sarmiento, and J. S. Harris, "Low-Threshold CW 1. 55-\µm GaAs-Based Lasers," Optical Fiber Communication Conf. (OFC), Anaheim, CA, Mar 2006.
  11. S. R. Bank, H. B. Yuen, M. A. Wistey, V. Lordi, H. P. Bae, and J. S. Harris, "Effects of Growth Temperature on the Optical Behavior of GaInNAsSb Alloys," 47th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2005.
  12. S. R. Bank, M. A. Wistey, L. L. Goddard, H. B. Yuen, H. P. Bae, and J. S. Harris, "1. 55 \µm GaInNAsSb Lasers on GaAs," Conf. on Lasers and Electro-Optics (CLEO), Baltimore, MD, May 2005.
  13. L. L. Goddard, S. R. Bank, M. A. Wistey, H. B. Yuen, H. P. Bae, and J. S. Harris, "Differential Gain and Nonlinear Gain Compression of GaInNAsSb/GaAs Lasers at 1. 5 \µm," Conf. on Lasers and ElectroOptics (CLEO), Baltimore, MD, May 2005.
  14. S. R. Bank, M. A. Wistey, H. B. Yuen, H. P. Bae, L. L. Goddard, and J. S. Harris, "Defect Modification in GaInNAsSb Growth with Insertion of GaAs Prelayers," Materials Research Symposium (MRS), San Francisco, CA, Apr 2005.
  15. L. L. Goddard, S. R. Bank, M. A. Wistey, H. B. Yuen, and J. S. Harris, "High performance GaInNAsSb/GaAs lasers at 1. 5 \µm," SPIE Photonics West, San Jose, CA, Jan 2005.
  16. S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, H. P. Bae, and J. S. Harris, "MBE Growth of Low Threshold CW GaInNAsSb Lasers at 1. 5 \µm," North American Molecular Beam Epitaxy Conf. (NAMBE), Banff, Alberta, Canada, Oct 2004.
  17. S. R. Bank, M. A. Wistey, H. B. Yuen, V. Lordi, V. Gambin, and J. S. Harris, "Effects of Antimony and Ion Damage on Carrier Localization in MBE-Grown GaInNAs," North American Molecular Beam Epitaxy Conf. (NAMBE), Banff, Alberta, Canada, Oct 2004.