Publications

Displaying 19 publications
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Journal Article

  1. R. H. El-Jaroudi, K. M. McNicholas, H. S. Maczko, R. Kudrawiec, and S. R. Bank, "Growth advancement of GaAs-based BGaInAs alloys emitting at 1. 3 um by molecular beam epitaxy," Journal of Crystal Growth and Design, May 2022. Digital object identifier
  2. H. S. Maczko, R. H. El-Jaroudi, J. Kopaczek, S. R. Bank, and R. Kudrawiec, "Photoreflectance studies of the band gap alignments in boron diluted BGaInAs/GaAs quantum wells," Optical Materials Express, vol. 12, no. 8, pp. 3118-3131, Dec 2022. Digital object identifier
  3. E. M. Krivoy, H. P. Nair, A. M. Crook, S. Rahimi, S. J. Maddox, R. Salas, D. A. Ferrer, V. D. Dasika, D. Akinwande, and S. R. Bank, "Growth and characterization of LuAs films and nanostructures," APL, vol. 101, no. 14, pp. 141910, Oct 2012. Digital object identifier
  4. A. M. Crook, H. P. Nair, D. A. Ferrer, and S. R. Bank, "Suppression of planar defects in the molecular beam epitaxy of GaAs/ErAs/GaAs heterostructures," APL, vol. 99, pp. 072120, Aug 2011. Digital object identifier
  5. S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, A. Moto, and J. S. Harris, "Enhanced luminescence in GaInNAsSb quantum wells through variation of the arsenic and antimony fluxes," APL, vol. 88, no. 24, pp. 241923, Jun 2006. Digital object identifier
  6. H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, and A. Moto, "Comparison of GaNAsSb and GaNAs as quantum-well barriers for GaInNAsSb optoelectronic devices operating at 1. 3\—1. 55 \µm," J. Appl. Phys., vol. 96, no. 11, pp. 6375-6381, Dec 2004. Digital object identifier

Conference Paper

  1. Q. Meng, R. H. El-Jaroudi, R. C. White, H. S. Maczko, T. Dey, R. Kudrawiec, S. R. Bank, and M. A. Wistey, "Bandgap Evolution in B-III-V Alloys," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  2. H. S. Maczko, J. Kopaczek, S. J. Maddox, A. K. Rockwell, S. D. March, M. Gladysiewicz, S. R. Bank, and R. Kudrawiec, "An AlInAsSb/GaSb Superlattice Analysis–The Digital Alloy Iduced Conduction Band States," International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Hong Kong, China, Nov 2018. Digital object identifier
  3. K. M. McNicholas, D. J. Ironside, R. H. El-Jaroudi, H. S. Maczko, G. Cossio, L. J. Nordin, S. D. Sifferman, R. Kudrawiec, E. T. Yu, D. Wasserman, and S. R. Bank, "BGaAs/GaP heteroepitaxy for strain-free luminescent layers on Si," 60th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2018.
  4. A. M. Crook, H. P. Nair, J. H. Lee, D. A. Ferrer, D. Akinwande, and S. R. Bank, "Overgrowth of Epitaxially-Embedded ErAs Films on GaAs," 54th Electronic Materials Conf. (EMC), University Park, PA, Jun 2012.
  5. A. M. Crook, H. P. Nair, D. A. Ferrer, and S. R. Bank, "Growth of semimetallic ErAs films epitaxially embedded in GaAs," SPIE NanoScience and Engineering, San Diego, CA, Aug 2011.
  6. A. M. Crook, H. P. Nair Jong Ho Lee, D. A. Ferrer, D. Akinwande, and S. R. Bank, "Nanoparticle Seeded Growth of ErAs Films Embedded in GaAs," North American Molecular Beam Epitaxy Conf. (NAMBE), San Diego, CA, Aug 2011.
  7. E. M. Krivoy, S. J. Maddox, H. P. Nair, A. M. Crook, V. D. Dasika, D. A. Ferrer, and S. R. Bank, "LuAs films and nanostructures," North American Molecular Beam Epitaxy Conf. (NAMBE), San Diego, CA, Aug 2011.
  8. A. M. Crook, H. P. Nair, D. A. Ferrer, and S. R. Bank, "Growth of Epitaxially-Embedded ErAs Films in GaAs," 53rd Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2011.
  9. A. M. Crook, H. P. Nair, D. A. Ferrer, and S. R. Bank, "Growth of Rare-Earth Monopnictide Films via Epitaxial Embedding for Plasmonics," International Symposium on Compount Semiconductors (ISCS), Berlin, Germany, May 2011.
  10. H. P. Nair, A. M. Crook, K. W. Park, D. A. Ferrer, S. K. Banerjee, E. T. Yu, and S. R. Bank, "Investigation of MBE-grown ErAs nanoparticle morphology for high-performance optical and electronic devices," North American Molecular Beam Epitaxy Conference (NAMBE), Breckenridge, CO, Sep 2010.
  11. H. B. Yuen, S. R. Bank, M. A. Wistey, H. P. Bae, J. S. Harris, and A. Moto, "Effects of N2 Flow on GaInNAs Grown by a RF Plasma cell in MBE," Materials Research Symposium (MRS), San Franciso, CA, Apr 2004.
  12. H. B. Yuen, V. Lordi, S. R. Bank, M. A. Wistey, J. S. Harris, and A. Moto, "Analysis of Material Properties of GaNAs(Sb) Grown by MBE," Materials Research Symposium (MRS), Boston, MA, Dec 2003.
  13. H. B. Yuen, S. R. Bank, M. A. Wistey, A. Moto, and J. S. Harris, "An Investigation of GaNAs(Sb) for Strain Compensated Active Regions at 1. 3 and 1. 55 \µm," 45th Electronic Materials Conf. (EMC), Salt Lake City, UT, Jun 2003.