Publications

Displaying 15 publications
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Journal Article

  1. R. Ramesh, T. Hsieh, A. M. Skipper, Q. Meng, K. C. Wen, F. Shafiei, M. A. Wistey, M. C. Downer, J. B. Khurgin, and S. R. Bank, "Interband second-order nonlinear optical susceptibility of asymmetric coupled quantum wells," Applied Physics Letters, vol. 123, no. 25, Dec 2023. Digital object identifier
  2. E. S. Walker, S. E. Muschinske, C. J. Brennan, S. Ryul. Na, T. Trivedi, S. D. March, Y. Sun, T. Yang, A. Yau, D. Jung, A. F. Briggs, E. M. Krivoy, M. L. Lee, K. M. Liechti, E. T. Yu, D. Akinwande, and S. R. Bank, "Composition-dependent structural transition in epitaxial Bi1-xSbx thin films on Si(111)," Physical Review Materials, vol. 3, no. 6, pp. 064201, Jun 2019. Digital object identifier
  3. T. Trivedi, A. Roy, H. C. P. Movva, E. S. Walker, S. R. Bank, D. P. Neikirk, and S. K. Banerjee, "Versatile Large-Area Custom-Feature van der Waals Epitaxy of Topological Insulators," ACS Nano, vol. 11, pp. 7457-7467, Jul 2017. Digital object identifier
  4. E. S. Walker, S. Ryul. Na, D. Jung, S. D. March, J. Kim, T. Trivedi, W. Li, L. Tao, M. L. Lee, K. M. Liechti, D. Akinwande, and S. R. Bank, "Large-Area Dry Transfer of Single-Crystalline Epitaxial Bismuth Thin Films," Nano Letters, vol. 16, no. 11, pp. 6931-6938, Oct 2016. Digital object identifier
  5. S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, A. Moto, and J. S. Harris, "Enhanced luminescence in GaInNAsSb quantum wells through variation of the arsenic and antimony fluxes," APL, vol. 88, no. 24, pp. 241923, Jun 2006. Digital object identifier
  6. H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, and A. Moto, "Comparison of GaNAsSb and GaNAs as quantum-well barriers for GaInNAsSb optoelectronic devices operating at 1. 3\—1. 55 \µm," J. Appl. Phys., vol. 96, no. 11, pp. 6375-6381, Dec 2004. Digital object identifier

Conference Paper

  1. P. Devaney, K. C. Wen, R. Ramesh, N. Irwin, A. F. Ricks, S. Shakkottai, and S. R. Bank, "Blackbox Machine Learning for Nonlinear Materials Design," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  2. K. C. Wen, P. Devaney, R. Ramesh, A. F. Ricks, Q. Meng, Z. Sakotic, D. Wasserman, J. B. Khurgin, and S. R. Bank, "Semiconductor Quantum Well Structures with Large Third-order Interband Optical Nonlinearities," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  3. A. F. Ricks, K. C. Wen, M. Brown, Z. Sakotic, M. Waqar, X. Pan, D. Wasserman, and S. R. Bank, "Coupled Quantum Well Interface Quality and Second-Harmonic Generation Effects," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  4. R. Ramesh, T. Hsieh, A. M. Skipper, Q. Meng, K. C. Wen, M. A. Wistey, F. Shafiei, M. W. Downer, J. B. Khurgin, and S. R. Bank, "Engineering of the Interband Second Order Optical Nonlinearity with Asymmetric Coupled Quantum Wells," 65th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2023.
  5. S. E. Muschinske, E. S. Walker, C. J. Brennan, Y. Sun, A. Yau, T. Trivedi, A. Roy, S. D. March, A. F. Briggs, E. M. Krivoy, D. Akinwande, M. L. Lee, E. T. Yu, and S. R. Bank, "Epitaxial Growth and Characterization of 2-D BixSb1-x Alloys on Si(111)," 60th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2018.
  6. E. S. Walker, S. Ryul. Na, D. Jung, S. D. March, Y. Liu, T. Trivedi, W. Li, L. Tao, M. L. Lee, K. M. Liechti, D. Akinwande, and S. R. Bank, "Growth and Transfer of Epitaxial Bismuth Films for Flexible Electronics," 58th Electronic Materials Conf. (EMC), Newark, DE, Jun 2016.
  7. H. B. Yuen, S. R. Bank, M. A. Wistey, H. P. Bae, J. S. Harris, and A. Moto, "Effects of N2 Flow on GaInNAs Grown by a RF Plasma cell in MBE," Materials Research Symposium (MRS), San Franciso, CA, Apr 2004.
  8. H. B. Yuen, V. Lordi, S. R. Bank, M. A. Wistey, J. S. Harris, and A. Moto, "Analysis of Material Properties of GaNAs(Sb) Grown by MBE," Materials Research Symposium (MRS), Boston, MA, Dec 2003.
  9. H. B. Yuen, S. R. Bank, M. A. Wistey, A. Moto, and J. S. Harris, "An Investigation of GaNAs(Sb) for Strain Compensated Active Regions at 1. 3 and 1. 55 \µm," 45th Electronic Materials Conf. (EMC), Salt Lake City, UT, Jun 2003.