Publications

Displaying 7 publications
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Journal Article

  1. T. Dey, A. W. Arbogast, Q. Meng, M. Shamim. Reza, A. J. Muhowski, J. J. P. Cooper, E. Ozdemir, F. U. Naab, T. Borrely, J. Anderson, R. S. Goldman, D. Wasserman, S. R. Bank, M. W. Holtz, E. L. Piner, and M. A. Wistey, "Influence of H on Sn incorporation in GeSnC alloys grown using molecular beam epitaxy," Journal of Applied Physics, vol. 134, no. 19, Nov 2023. Digital object identifier
  2. W. Zhong, Y. Zhao, B. Zhu, J. Sha, E. S. Walker, S. R. Bank, Y. Chen, D. Akinwande, and L. Tao, "Anisotropic thermoelectric effect and field-effect devices in epitaxial bismuthene on Si (111)," Nanotechnology, vol. 31, no. 47, Sep 2020. Digital object identifier
  3. S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, A. Moto, and J. S. Harris, "Enhanced luminescence in GaInNAsSb quantum wells through variation of the arsenic and antimony fluxes," APL, vol. 88, no. 24, pp. 241923, Jun 2006. Digital object identifier
  4. H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, and A. Moto, "Comparison of GaNAsSb and GaNAs as quantum-well barriers for GaInNAsSb optoelectronic devices operating at 1. 3\—1. 55 \µm," J. Appl. Phys., vol. 96, no. 11, pp. 6375-6381, Dec 2004. Digital object identifier

Conference Paper

  1. H. B. Yuen, S. R. Bank, M. A. Wistey, H. P. Bae, J. S. Harris, and A. Moto, "Effects of N2 Flow on GaInNAs Grown by a RF Plasma cell in MBE," Materials Research Symposium (MRS), San Franciso, CA, Apr 2004.
  2. H. B. Yuen, V. Lordi, S. R. Bank, M. A. Wistey, J. S. Harris, and A. Moto, "Analysis of Material Properties of GaNAs(Sb) Grown by MBE," Materials Research Symposium (MRS), Boston, MA, Dec 2003.
  3. H. B. Yuen, S. R. Bank, M. A. Wistey, A. Moto, and J. S. Harris, "An Investigation of GaNAs(Sb) for Strain Compensated Active Regions at 1. 3 and 1. 55 \µm," 45th Electronic Materials Conf. (EMC), Salt Lake City, UT, Jun 2003.