Publications

Displaying 12 publications
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Journal Article

  1. T. Dey, A. W. Arbogast, Q. Meng, M. Shamim. Reza, A. J. Muhowski, J. J. P. Cooper, E. Ozdemir, F. U. Naab, T. Borrely, J. Anderson, R. S. Goldman, D. Wasserman, S. R. Bank, M. W. Holtz, E. L. Piner, and M. A. Wistey, "Influence of H on Sn incorporation in GeSnC alloys grown using molecular beam epitaxy," Journal of Applied Physics, vol. 134, no. 19, Nov 2023. Digital object identifier
  2. H. S. Maczko, R. H. El-Jaroudi, J. Kopaczek, S. R. Bank, and R. Kudrawiec, "Photoreflectance studies of the band gap alignments in boron diluted BGaInAs/GaAs quantum wells," Optical Materials Express, vol. 12, no. 8, pp. 3118-3131, Dec 2022. Digital object identifier
  3. J. Kopaczek, F. Dybala, S. J. Zelewski, N. Sokolowski, W. Zuraw, K. M. McNicholas, R. H. El-Jaroudi, R. C. White, S. R. Bank, and R. Kudrawiec, "Photoreflectance studies of temperature and hydrostatic pressure dependencies of direct optical transitions in BGaAs alloys grown on GaP," Journal of Physics D: Applied Physics, vol. 55, no. 1, pp. 015107, Oct 2021. Digital object identifier
  4. R. Kudrawiec, M. Polak, K. M. McNicholas, J. Kopaczek, M. A. Wistey, and S. R. Bank, "Bowing of the band gap and spin-orbit splitting energy in BGaAs," Materials Research Express, vol. 6, no. 12, pp. 125913, Jan 2020. Digital object identifier
  5. S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, A. Moto, and J. S. Harris, "Enhanced luminescence in GaInNAsSb quantum wells through variation of the arsenic and antimony fluxes," APL, vol. 88, no. 24, pp. 241923, Jun 2006. Digital object identifier
  6. H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, and A. Moto, "Comparison of GaNAsSb and GaNAs as quantum-well barriers for GaInNAsSb optoelectronic devices operating at 1. 3\—1. 55 \µm," J. Appl. Phys., vol. 96, no. 11, pp. 6375-6381, Dec 2004. Digital object identifier

Conference Paper

  1. R. H. El-Jaroudi, K. M. McNicholas, B. A. Bouslog, J. Kopaczek, R. Kudrawiec, and S. R. Bank, "BGaInAs/GaAs quantum wells for 1. 3µm lasers," 61st Electronic Materials Conf. (EMC), Ann Arbor, MI, Jun 2019.
  2. K. M. McNicholas, R. H. El-Jaroudi, J. Kopaczek, A. H. Jones, D. J. Ironside, R. Judrawiec, J. C. Campbell, and S. R. Bank, "Progress towards B-III-V optoelectronic devices on silicon," 61st Electronic Materials Conf. (EMC), Ann Arbor, MI, Jun 2019.
  3. H. S. Maczko, J. Kopaczek, S. J. Maddox, A. K. Rockwell, S. D. March, M. Gladysiewicz, S. R. Bank, and R. Kudrawiec, "An AlInAsSb/GaSb Superlattice Analysis–The Digital Alloy Iduced Conduction Band States," International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Hong Kong, China, Nov 2018. Digital object identifier
  4. H. B. Yuen, S. R. Bank, M. A. Wistey, H. P. Bae, J. S. Harris, and A. Moto, "Effects of N2 Flow on GaInNAs Grown by a RF Plasma cell in MBE," Materials Research Symposium (MRS), San Franciso, CA, Apr 2004.
  5. H. B. Yuen, V. Lordi, S. R. Bank, M. A. Wistey, J. S. Harris, and A. Moto, "Analysis of Material Properties of GaNAs(Sb) Grown by MBE," Materials Research Symposium (MRS), Boston, MA, Dec 2003.
  6. H. B. Yuen, S. R. Bank, M. A. Wistey, A. Moto, and J. S. Harris, "An Investigation of GaNAs(Sb) for Strain Compensated Active Regions at 1. 3 and 1. 55 \µm," 45th Electronic Materials Conf. (EMC), Salt Lake City, UT, Jun 2003.