Publications

Displaying 19 publications
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Journal Article

  1. E. S. Walker, S. E. Muschinske, C. J. Brennan, S. Ryul. Na, T. Trivedi, S. D. March, Y. Sun, T. Yang, A. Yau, D. Jung, A. F. Briggs, E. M. Krivoy, M. L. Lee, K. M. Liechti, E. T. Yu, D. Akinwande, and S. R. Bank, "Composition-dependent structural transition in epitaxial Bi1-xSbx thin films on Si(111)," Physical Review Materials, vol. 3, no. 6, pp. 064201, Jun 2019. Digital object identifier
  2. E. S. Walker, S. Ryul. Na, D. Jung, S. D. March, J. Kim, T. Trivedi, W. Li, L. Tao, M. L. Lee, K. M. Liechti, D. Akinwande, and S. R. Bank, "Large-Area Dry Transfer of Single-Crystalline Epitaxial Bismuth Thin Films," Nano Letters, vol. 16, no. 11, pp. 6931-6938, Oct 2016. Digital object identifier
  3. R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, and J. Misiewicz, "On the Fermi level pinning in as-grown GaInNAs(Sb)/GaAs quantum wells with indium content of 8%\—32%," J. Appl. Phys., vol. 104, no. 3, pp. 033526, Aug 2008. Digital object identifier
  4. R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, and J. Misiewicz, "Contactless electroreflectance approach to study the Fermi level position in GaInNAs/GaAs quantum wells," J. Appl. Phys., vol. 102, no. 11, pp. 113501, Dec 2007. Digital object identifier
  5. R. Kudrawiec, S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, L. L. Goddard, J. S. Harris, M. Gladysiewicz, M. Motyka, and J. Misiewicz, "Conduction band offset for Ga0. 62In0. 38NxAs0. 991 - xSb0. 009/GaNyAs1 - y/GaAs systems with the ground state transition at 1. 5-1. 65 \µm," APL, vol. 90, no. 13, pp. 131905, Mar 2007. Digital object identifier
  6. R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, and J. Misiewicz, "Fermi level shift in GaInNAsSb/GaAs quantum wells upon annealing studied by contactless electroreflectance," APL, vol. 90, no. 6, pp. 061902, Feb 2007. Digital object identifier
  7. R. Kudrawiec, H. B. Yuen, M. Motyka, M. Gladysiewicz, J. Misiewicz, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "Contactless electroreflectance of GaInNAsSb∕GaAs single quantum wells with indium content of 8%–32%," J. of Appl. Phys., vol. 101, no. 1, pp. 013504, Jan 2007. Digital object identifier
  8. S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, A. Moto, and J. S. Harris, "Enhanced luminescence in GaInNAsSb quantum wells through variation of the arsenic and antimony fluxes," APL, vol. 88, no. 24, pp. 241923, Jun 2006. Digital object identifier
  9. R. Kudrawiec, M. Motyka, M. Gladysiewicz, J. Misiewicz, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "Band gap discontinuity in Ga0. 9In0. 1N0. 027As0. 973 - xSbx/GaAs single quantum wells with 0 ≤ x < 0. 06 studied by contactless electroreflectance spectroscopy," APL, vol. 88, no. 22, pp. 221113, May 2006. Digital object identifier
  10. H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, and A. Moto, "Comparison of GaNAsSb and GaNAs as quantum-well barriers for GaInNAsSb optoelectronic devices operating at 1. 3\—1. 55 \µm," J. Appl. Phys., vol. 96, no. 11, pp. 6375-6381, Dec 2004. Digital object identifier

Conference Paper

  1. S. D. Sifferman, M. Motyka, A. F. Briggs, K. J. Underwood, K. M. McNicholas, R. Kudrawiec, J. T. Gopinath, and S. R. Bank, "Dilute-Bismide Alloys for GaSb-based Mid-Infrared Semiconductor Lasers," Conf. on Lasers and Electro Optics (CLEO), San Jose, CA, May 2018.
  2. E. S. Walker, S. Ryul. Na, Y. Sun, C. J. Brennan, F. He, R. H. Roberts, N. Yoon, S. E. Muschinske, S. D. March, A. F. Briggs, D. Wasserman, D. Akinwande, Y. Wang, E. T. Yu, M. L. Lee, K. M. Liechti, and S. R. Bank, "Epitaxial Growth and Transfer of Bismuth and Bismuth Antimonide Thin Films," SRC TECHCON, Austin, TX, Sep 2017.
  3. E. S. Walker, S. E. Muschinske, R. H. Roberts, N. Yoon, C. J. Brennan, S. Ryul. Na, S. D. March, Y. Sun, A. F. Briggs, E. Davis, D. Akinwande, K. M. Liechti, E. T. Yu, D. Wasserman, and S. R. Bank, "Epitaxial Growth and Transfer of BixSb1-x Thin Films," 59th Electronic Materials Conf. (EMC), South Bend, IN, Jun 2017.
  4. S. E. Muschinske, E. S. Walker, S. Ryul. Na, S. D. March, A. F. Briggs, D. Akinwande, K. M. Liechti, and S. R. Bank, "Epitaxial Bismuth Transfer to Arbitrary Substrates Using Thermal Release Tape," 59th Electronic Materials Conf. (EMC), South Bend, IN, Jun 2017.
  5. E. S. Walker, S. Ryul. Na, D. Jung, S. D. March, Y. Liu, T. Trivedi, W. Li, L. Tao, M. L. Lee, K. M. Liechti, D. Akinwande, and S. R. Bank, "Growth and Transfer of Epitaxial Bismuth Films for Flexible Electronics," 58th Electronic Materials Conf. (EMC), Newark, DE, Jun 2016.
  6. S. R. Bank, H. P. Bae, H. B. Yuen, M. A. Wistey, L. L. Goddard, J. S. Harris, R. Kudrawiec, M. Gladysiewicz, M. Motyka, and J. Misiewicz, "Low-Threshold Continuous-Wave 1. 55-\µm GaInNAsSb lasers," Conf. on Lasers and Electro Optics (CLEO), Long Beach, CA, May 2006.
  7. H. B. Yuen, S. R. Bank, M. A. Wistey, H. P. Bae, J. S. Harris, and A. Moto, "Effects of N2 Flow on GaInNAs Grown by a RF Plasma cell in MBE," Materials Research Symposium (MRS), San Franciso, CA, Apr 2004.
  8. H. B. Yuen, V. Lordi, S. R. Bank, M. A. Wistey, J. S. Harris, and A. Moto, "Analysis of Material Properties of GaNAs(Sb) Grown by MBE," Materials Research Symposium (MRS), Boston, MA, Dec 2003.
  9. H. B. Yuen, S. R. Bank, M. A. Wistey, A. Moto, and J. S. Harris, "An Investigation of GaNAs(Sb) for Strain Compensated Active Regions at 1. 3 and 1. 55 \µm," 45th Electronic Materials Conf. (EMC), Salt Lake City, UT, Jun 2003.