Publications

Displaying 17 publications
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Journal Article

  1. N. D. Foster, A. K. Rockwell, J. A. McArthur, B. S. Mendoza, S. R. Bank, and M. C. Downer, "A Study of Second-Order Susceptibility in Digital Alloy-Grown InAs/AlSb Multiple Quantum Wells," Advanced Optical Materials, vol. 10, no. 2192845, May 2022. Digital object identifier
  2. U. Singisetti, J. D. Zimmerman, M. A. Wistey, J. Cagnon, B. J. Thibeault, M. J. Rodwell, A. C. Gossard, S. Stemmer, and S. R. Bank, "ErAs epitaxial Ohmic contacts to InGaAs/InP," APL, vol. 94, no. 8, pp. 083505-083505, Feb 2009. Digital object identifier
  3. U. Singisetti, M. A. Wistey, J. D. Zimmerman, B. J. Thibeault, M. J. Rodwell, A. C. Gossard, and S. R. Bank, "Ultralow resistance in situ Ohmic contacts to InGaAs/InP," APL, vol. 93, no. 18, pp. 183502, Nov 2008. Digital object identifier
  4. A. M. Crook, E. Lind, Z. Griffith, M. J. Rodwell, J. D. Zimmerman, A. C. Gossard, and S. R. Bank, "Low resistance, nonalloyed Ohmic contacts to InGaAs," APL, vol. 91, no. 19, pp. 192114, Nov 2007. Digital object identifier
  5. M. P. Hanson, S. R. Bank, J. M. O. Zide, J. D. Zimmerman, and A. C. Gossard, "Controlling electronic properties of epitaxial nanocomposites of dissimilar materials," J. Cryst. Growth, vol. 301-302, pp. 4-9, Apr 2007. Digital object identifier
  6. S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, A. Moto, and J. S. Harris, "Enhanced luminescence in GaInNAsSb quantum wells through variation of the arsenic and antimony fluxes," APL, vol. 88, no. 24, pp. 241923, Jun 2006. Digital object identifier
  7. H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, and A. Moto, "Comparison of GaNAsSb and GaNAs as quantum-well barriers for GaInNAsSb optoelectronic devices operating at 1. 3\—1. 55 \µm," J. Appl. Phys., vol. 96, no. 11, pp. 6375-6381, Dec 2004. Digital object identifier

Conference Paper

  1. N. D. Foster, A. K. Rockwell, J. A. McArthur, M. Santoyo, S. R. Bank, and M. C. Downer, "Measurement of chi(2) of III-V quantum well structures," Bulletin of the American Physical Society, Mar 2021.
  2. N. D. Foster, A. K. Rockwell, S. R. Bank, and M. C. Downer, "Analysis of chi(2) of III-V quantum-well structures using transfer matrix techniques," American Physical Society March Meeting (APS), Denver, CO, Mar 2020.
  3. A. M. Crook, H. P. Nair, K. Vijayraghavan, M. A. Wistey, J. D. Zimmerman, J. M. O. Zide, A. C. Gossard, and S. R. Bank, "Annealing Stability of Nanoparticle-Enhanced Tunnel Junctions for High-Efficiency Solar Cells and Mid-Infrared Lasers," 51st Electronic Materials Conf. (EMC), University Park, PA, Jun 2009.
  4. U. Singisetti, A. M. Crook, E. Lind, M. A. Wistey, J. D. Zimmerman, A. C. Gossard, M. J. Rodwell, and S. R. Bank, "Ultra-Low Resistance Ohmic Contacts to InGaAs/InP," 65th Device Research Conf. (DRC), South Bend, IN, Jun 2007.
  5. A. C. Gossard, M. P. Hanson, J. M. O. Zide, J. D. Zimmerman, S. R. Bank, E. Brown, and M. J. Rodwell, "Metal/semiconductor Heterostructures for Terahertz Applications," Materials Research Symposium (MRS), San Francisco, CA, Apr 2007.
  6. S. R. Bank, U. Singisetti, A. M. Crook, J. D. Zimmerman, J. M. O. Zide, A. C. Gossard, and M. J. Rodwell, "MBE Growth of ErAs/In(Ga)As Epitaxial Ultra-Low Resistance Ohmic Contacts," North American Molecular Beam Epitaxy Conf. (NAMBE), Sep 2006.
  7. (Plenary) A. C. Gossard, M. P. Hanson, J. M. O. Zide, J. D. Zimmerman, and S. R. Bank, "Growth and Uses of Metal/Semiconductor Heterostructures," 48th Electronic Materials Conf. (EMC), University Park, PA, Jun 2006.
  8. H. B. Yuen, S. R. Bank, M. A. Wistey, H. P. Bae, J. S. Harris, and A. Moto, "Effects of N2 Flow on GaInNAs Grown by a RF Plasma cell in MBE," Materials Research Symposium (MRS), San Franciso, CA, Apr 2004.
  9. H. B. Yuen, V. Lordi, S. R. Bank, M. A. Wistey, J. S. Harris, and A. Moto, "Analysis of Material Properties of GaNAs(Sb) Grown by MBE," Materials Research Symposium (MRS), Boston, MA, Dec 2003.
  10. H. B. Yuen, S. R. Bank, M. A. Wistey, A. Moto, and J. S. Harris, "An Investigation of GaNAs(Sb) for Strain Compensated Active Regions at 1. 3 and 1. 55 \µm," 45th Electronic Materials Conf. (EMC), Salt Lake City, UT, Jun 2003.