Publications

Displaying 30 publications
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Journal Article

  1. J. A. McArthur, A. A. Dadey, S. D. March, A. H. Jones, X. Xue, R. Salas, J. C. Campbell, and S. R. Bank, "Demonstration of the AlInAsSb Cascaded Multiplier Avalanche Photodiode," Applied Physics Letters, vol. 123, no. 4, pp. 041106, Jul 2023. Digital object identifier
  2. D. Chen, S. D. March, A. H. Jones, Y. Shen, A. A. Dadey, K. Sun, J. A. McArthur, A. M. Skipper, X. Xue, B. Guo, J. Bai, S. R. Bank, and J. C. Campbell, "Photon-trapping-enhanced avalanche photodiodes for mid-infrared applications," Nature Photonics, May 2023. Digital object identifier
  3. B. Guo, S. Z. Ahmed, X. Xue, A. K. Rockwell, J. Ha, S. Lee, B. Liang, A. H. Jones, J. A. McArthur, S. H. Kodati, T. J. Ronningen, S. Krishna, J. Kim, S. R. Bank, A. W. Ghosh, and J. C. Campbell, "Temperature dependence of avalanche breakdown of AlGaAsSb and AlInAsSb avalanche photodiodes," Journal of Lightwave Technology, Jun 2022. Digital object identifier
  4. R. Wang, D. Chen, J. A. McArthur, X. Xue, A. H. Jones, S. R. Bank, and J. C. Campbell, "Al0. 3InAsSb/Al0. 7InAsSb Digital Alloy nBn Photodetectors," Journal of Lightwave Technology, vol. 40, no. 1, pp. 113-120, Oct 2021. Digital object identifier
  5. D. Chen, J. A. McArthur, S. D. March, X. Xue, A. H. Jones, A. A. Dadey, S. R. Bank, and J. C. Campbell, "Comparison and analysis of Al0. 7InAsSb avalanche photodiodes with different background doping polarities," Applied Physics Letters, vol. 119, no. 3, pp. 032101, Jul 2021. Digital object identifier
  6. D. Chen, R. Wang, J. A. McArthur, X. Xue, A. H. Jones, S. R. Bank, and J. C. Campbell, "Demonstration of infrared nBn photodetectors based on the AlInAsSb digital alloy materials system," Applied Physics Letters, vol. 119, no. 3, pp. 031101, Jul 2021. Digital object identifier
  7. S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, A. Moto, and J. S. Harris, "Enhanced luminescence in GaInNAsSb quantum wells through variation of the arsenic and antimony fluxes," APL, vol. 88, no. 24, pp. 241923, Jun 2006. Digital object identifier
  8. H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, and A. Moto, "Comparison of GaNAsSb and GaNAs as quantum-well barriers for GaInNAsSb optoelectronic devices operating at 1. 3\—1. 55 \µm," J. Appl. Phys., vol. 96, no. 11, pp. 6375-6381, Dec 2004. Digital object identifier

Conference Paper

  1. J. Duncan, R. Ramesh, A. F. Ricks, M. Brown, Z. Sakotic, F. A. Estévez, F. Shafiei, M. W. Downer, D. Wasserman, and S. R. Bank, "Optical Structuring to Reliably Determine Interband Optical Nonlinearity via Second Harmonic Generation," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  2. K. C. Wen, P. Devaney, R. Ramesh, A. F. Ricks, Q. Meng, Z. Sakotic, D. Wasserman, J. B. Khurgin, and S. R. Bank, "Semiconductor Quantum Well Structures with Large Third-order Interband Optical Nonlinearities," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  3. P. Devaney, K. C. Wen, R. Ramesh, N. Irwin, A. F. Ricks, S. Shakkottai, and S. R. Bank, "Blackbox Machine Learning for Nonlinear Materials Design," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  4. A. F. Ricks, K. C. Wen, M. Brown, Z. Sakotic, M. Waqar, X. Pan, D. Wasserman, and S. R. Bank, "Coupled Quantum Well Interface Quality and Second-Harmonic Generation Effects," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  5. A. F. Ricks, R. C. White, Q. Meng, H. Hijazi, M. A. Wistey, and S. R. Bank, "Bismuth Incorporation in AlInSb for an Improved Barrier Layer Material," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  6. R. C. White, M. K. Bergthold, A. F. Ricks, F. A. Estévez, D. Wasserman, and S. R. Bank, "Bismuth Incorporation into InSb Towards Long-Wave Infrared Photodetectors," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  7. R. C. White, M. K. Bergthold, T. A. Leonard, A. F. Ricks, D. Wasserman, and S. R. Bank, "InSb-Based Dilute-Bismide Alloys Towards Long-Wave Infrared Sensing," 37th North American Molecular Beam Epitaxy Conf. (NAMBE), Madison, WI, Sep 2023.
  8. A. F. Ricks, R. C. White, Q. Meng, M. K. Bergthold, M. A. Wistey, D. Wasserman, and S. R. Bank, "Bismuth Incorporation in AlInSb for Wide-Bandgap Barriers on InSb," 65th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2023.
  9. R. C. White, M. K. Bergthold, T. A. Leonard, A. F. Ricks, D. Wasserman, and S. R. Bank, "Optical and Structural Properties of InSb-Based Dilute-Bismide Alloys Grown by Molecular Beam Epitaxy," 65th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2023.
  10. R. C. White, M. K. Bergthold, I. Okoro, Y. Wang, L. J. Nordin, A. J. Muhowski, A. F. Ricks, D. Wasserman, and S. R. Bank, "Towards Lattice-Matched Narrow Bandgap InAsSbBi Photodetectors," 36th North American Molecular Beam Epitaxy Conf. (NAMBE), Rehoboth Beach, DE, Sep 2022.
  11. A. F. Ricks, R. C. White, Q. Meng, M. K. Bergthold, M. A. Wistey, and S. R. Bank, "Growth and characterization of AlInSbBi for wide-bandgap barriers on InSb," 64th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2022.
  12. R. C. White, M. K. Bergthold, A. J. Muhowski, L. J. Nordin, A. F. Ricks, D. Wasserman, and S. R. Bank, "Growth of InAsSbBi on InSb Towards Lattice-Matched Longwave-Infrared Optoelectronics," 64th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2022.
  13. J. A. McArthur, A. A. Dadey, S. D. March, A. H. Jones, X. Xue, J. C. Campbell, and S. R. Bank, "The Cascaded Multiplier Avalanche Photodiode," 80th Device Research Conf. (DRC), Columbus, OH, Jun 2022.
  14. R. Wang, D. Chen, J. A. McArthur, X. Xue, S. R. Bank, and J. C. Campbell, "AlxIn1-xAsySb1-y digital alloy nBn photodetectors," 2021 IEEE Photonics Conference (IPC), Vancouver, BC, Canada, Oct 2021.
  15. A. A. Dadey, S. D. March, X. Xue, S. R. Bank, and J. C. Campbell, "Cryogenic Noise of Staircase Avalanche Photodiodes," 2021 IEEE Photonics Conference (IPC), Vancouver, BC, Canada, Oct 2021.
  16. R. H. El-Jaroudi, A. H. Jones, A. A. Dadey, B. Guo, X. Xue, J. C. Campbell, and S. R. Bank, "Growth of B-III-V alloys for GaAs-based optoelectronic devices," 62nd Electronic Materials Conf. (EMC), Virtual, Jun 2021.
  17. R. H. El-Jaroudi, A. A. Dadey, X. Xue, A. H. Jones, B. Guo, J. C. Campbell, and S. R. Bank, "Reducing III-V avalanche photodiode noise through the introduction of boron," 79th Device Research Conf. (DRC), Virtual, Jun 2021.
  18. (Invited) S. R. Bank, X. Xue, S. D. March, Y. Yuan, A. H. Jones, A. K. Rockwell, and J. C. Campbell, "Towards Single Photon Counting at Room Temperature with Digital Alloy Avalanche Photodiodes," IEEE Research and Applications of Photonics in Defense (RAPID), Miramar Beach, FL, Aug 2020.
  19. A. K. Rockwell, A. H. Jones, Y. Yuan, X. Xue, S. D. March, J. C. Campbell, and S. R. Bank, "Temperature Stability of III-V Digital Alloy Bandgaps," 62nd Electronic Materials Conf. (EMC), Columbus, OH, Jun 2020.
  20. H. B. Yuen, S. R. Bank, M. A. Wistey, H. P. Bae, J. S. Harris, and A. Moto, "Effects of N2 Flow on GaInNAs Grown by a RF Plasma cell in MBE," Materials Research Symposium (MRS), San Franciso, CA, Apr 2004.
  21. H. B. Yuen, V. Lordi, S. R. Bank, M. A. Wistey, J. S. Harris, and A. Moto, "Analysis of Material Properties of GaNAs(Sb) Grown by MBE," Materials Research Symposium (MRS), Boston, MA, Dec 2003.
  22. H. B. Yuen, S. R. Bank, M. A. Wistey, A. Moto, and J. S. Harris, "An Investigation of GaNAs(Sb) for Strain Compensated Active Regions at 1. 3 and 1. 55 \µm," 45th Electronic Materials Conf. (EMC), Salt Lake City, UT, Jun 2003.