Publications

Displaying 39 publications
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Journal Article

  1. R. Salas, S. Guchhait, S. D. Sifferman, K. M. McNicholas, V. D. Dasika, D. Jung, E. M. Krivoy, M. L. Lee, and S. R. Bank, "Growth rate and surfactant-assisted enhancements of rare-earth arsenide InGaAs nanocomposites for terahertz generation," APL Materials, vol. 5, no. 9, pp. 096106, Sep 2017. Digital object identifier
  2. R. Salas, S. Guchhait, K. M. McNicholas, S. D. Sifferman, V. D. Dasika, D. Jung, E. M. Krivoy, M. L. Lee, and S. R. Bank, "Surfactant-assisted growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation," APL, vol. 108, no. 18, pp. 182102, May 2016. Digital object identifier
  3. R. Salas, S. Guchhait, S. D. Sifferman, K. M. McNicholas, V. D. Dasika, E. M. Krivoy, D. Jung, M. L. Lee, and S. R. Bank, "Growth and properties of rare-earth arsenide InGaAs nanocomposites for terahertz generation," APL, vol. 106, no. 8, pp. 081103, Feb 2015. Digital object identifier
  4. V. D. Dasika, E. M. Krivoy, H. P. Nair, S. J. Maddox, K. W. Park, D. Jung, M. L. Lee, E. T. Yu, and S. R. Bank, "Increased InAs Quantum Dot Size and Density using Bismuth as a Surfactant," APL, vol. 105, no. 25, pp. 253104, Dec 2014. Digital object identifier
  5. X. Li, V. D. Dasika, P. Li, L. Ji, S. R. Bank, and E. T. Yu, "Minimized open-circuit voltage reduction in GaAs/InGaAs quantum well solar cells with bandgap-engineered graded quantum well depths," APL, vol. 105, no. 12, pp. 123906, Sep 2014. Digital object identifier
  6. A. Majumdar, A. Rundquist, M. Bajcsy, V. D. Dasika, S. R. Bank, and J. Vuckovic, "Design and analysis of photonic crystal coupled cavity arrays for quantum simulation," Phys. Rev. B, vol. 86, pp. 195312, Nov 2012. Digital object identifier
  7. E. M. Krivoy, H. P. Nair, A. M. Crook, S. Rahimi, S. J. Maddox, R. Salas, D. A. Ferrer, V. D. Dasika, D. Akinwande, and S. R. Bank, "Growth and characterization of LuAs films and nanostructures," APL, vol. 101, no. 14, pp. 141910, Oct 2012. Digital object identifier
  8. K. W. Park, V. D. Dasika, H. P. Nair, A. M. Crook, S. R. Bank, and E. T. Yu, "Conductivity and structure of ErAs nanoparticles embedded in GaAs pn junctions analyzed via conductive atomic force microscopy," APL, vol. 100, no. 23, pp. 233117, Jun 2012. Digital object identifier
  9. J. S. Harris, R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, D. B. Jackrel, E. R. Pickett, T. Sarmiento, L. L. Goddard, V. Lordi, and T. Gugov, "Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications," Physica Status Solidi (b), vol. 244, no. 8, pp. 2707-2729, Jul 2007. Digital object identifier
  10. S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, A. Moto, and J. S. Harris, "Enhanced luminescence in GaInNAsSb quantum wells through variation of the arsenic and antimony fluxes," APL, vol. 88, no. 24, pp. 241923, Jun 2006. Digital object identifier
  11. M. A. Wistey, S. R. Bank, H. B. Yuen, L. L. Goddard, T. Gugov, and J. S. Harris, "Protecting wafer surface during plasma ignition using an arsenic cap," J. Vac. Sci. Technol. B, vol. 23, no. 3, pp. 1324-1327, May 2005. Digital object identifier
  12. T. Gugov, V. Gambin, M. A. Wistey, H. B. Yuen, S. R. Bank, and J. S. Harris, "Use of transmission electron microscopy in the characterization of GaInNAs(Sb) quantum well structures grown by molecular beam epitaxy," J. Vac. Sci. Technol. B, vol. 22, no. 3, pp. 1588-1592, May 2004. Digital object identifier
  13. H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, and A. Moto, "Comparison of GaNAsSb and GaNAs as quantum-well barriers for GaInNAsSb optoelectronic devices operating at 1. 3\—1. 55 \µm," J. Appl. Phys., vol. 96, no. 11, pp. 6375-6381, Dec 2004. Digital object identifier

Conference Paper

  1. R. Salas, N. T. Sheehan, S. Guchhait, K. M. McNicholas, S. D. Sifferman, V. D. Dasika, E. M. Krivoy, and S. R. Bank, "Properties of Growth Enhanced ErAs:InGaAs Nanocomposites," 57th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2015.
  2. D. J. Ironside, E. M. Krivoy, V. D. Dasika, E. S. Walker, K. Nguyen, J. Jeong, Y. Wang, and S. R. Bank, "Tailored III-V Metamorphic Buffer Layers utilizing Embedded Rare Earth Monopnictides for Optoelectronic Applications," 57th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2015.
  3. D. J. Ironside, E. M. Krivoy, V. D. Dasika, and S. R. Bank, "Dislocation-filtering with Rare-earth Monopnictide Nanoparticles Embedded in Metamorphic Buffer Layers," International Molecular Beam Epitaxy Conf. (ICMBE), Flagstaff, AZ, Sep 2014.
  4. R. Salas, S. Guchhait, S. D. Sifferman, K. M. McNicholas, V. D. Dasika, D. Jung, M. L. Lee, and S. R. Bank, "Surfactant-Mediated Growth of RE-As:InGaAs Nanocomposites," International Molecular Beam Epitaxy Conf. (IMBE), Flagstaff, AZ, Sep 2014.
  5. A. K. Rockwell, S. J. Maddox, R. Salas, V. D. Dasika, and S. R. Bank, "Rapid Thermal Annealing of Ion Implanted InAs:S for Mid-IR Plasmonics," 56th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2014.
  6. R. Salas, S. Guchhait, S. D. Sifferman, K. M. McNicholas, V. D. Dasika, D. J. Ironside, E. M. Krivoy, S. J. Maddox, D. Jung, M. L. Lee, and S. R. Bank, "Properties of RE-As:InGaAs Nanocomposites," 56th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2014.
  7. S. J. Maddox, A. P. Vasudev, V. D. Dasika, S. D. March, M. L. Brongersma, and S. R. Bank, "Effects of Growth Rate, Substrate Temperature, and a Bi Surfactant on Doping Limits in InAs:Si Grown by Molecular Beam Epitaxy," 56th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2014.
  8. S. J. Maddox, A. P. Vasudev, V. D. Dasika, M. L. Brongersma, and S. R. Bank, "Exploring the Limits of Silicon Doping in InAs for Mid-Infrared Plasmonics," North American Molecular Beam Epitaxy Conf. (NAMBE), Banff, Alberta, Canada, Oct 2013.
  9. V. D. Dasika, E. M. Krivoy, H. P. Nair, S. J. Maddox, K. W. Park, D. Jung, M. L. Lee, E. T. Yu, and S. R. Bank, "InAs Quantum Dot Growth using Bismuth as a Surfactant for Optoelectronic Applications," Conf. on Lasers and Electro Optics (CLEO), San Jose, CA, Jun 2013.
  10. E. M. Krivoy, A. P. Vasudev, H. P. Nair, V. D. Dasika, R. A. Synowicki, R. Salas, S. J. Maddox, M. L. Brongersma, and S. R. Bank, "Tunable, Epitaxial, Semimetallic Films for Plasmonics," Conf. on Lasers and Electro Optics (CLEO), San Jose, CA, Jun 2013.
  11. S. J. Maddox, K. M. Yu, A. J. Ptak, H. P. Nair, V. D. Dasika, and S. R. Bank, "Optical and Structural Characterization of InAsBi and InGaAsBi Grown by Molecular Beam Epitaxy," 55th Electronic Materials Conf. (EMC), South Bend, IN, Jun 2013.
  12. A. Rundquist, A. Majumdar, M. Bajcsy, V. D. Dasika, S. R. Bank, and J. Vuckovic, "Photonic crystal coupled cavity arrays for quantum simulation," Conf. on Lasers and Electro Optics (CLEO), San Jose, CA, Jun 2013.
  13. S. J. Maddox, A. P. Vasudev, V. D. Dasika, M. L. Brongersma, and S. R. Bank, "Bismuth Surfactant-Mediated Epitaxy of Highly Doped InAs for Mid-Infrared Plasmonics," North American Molecular Beam Epitaxy Conf. (NAMBE), Stone Mountain Park, GA, Oct 2012.
  14. S. J. Maddox, H. P. Nair, V. D. Dasika, E. M. Krivoy, R. Salas, and S. R. Bank, "Molecular Beam Epitaxy Growth-Space Investigation of InAsBi and InGaAsBi on InAs," International Symposium on Compound Semiconductors (ISCS), Santa Barbara, CA, Aug 2012.
  15. K. W. Park, V. D. Dasika, H. P. Nair, A. M. Crook, S. R. Bank, and E. T. Yu, "Scanned Probe Characterization of ErAs/GaAs Nanostructures below the Resolution Limit via Statistical Analysis," International Symposium on Compound Semiconductors (ISCS), Santa Barbara, CA, Aug 2012.
  16. (Invited) S. R. Bank, E. M. Krivoy, A. M. Crook, H. P. Nair, R. Salas, and V. D. Dasika, "New Epitaxial Metallic Nanostructure Materials for Photonic Devices," SPIE Optics and Photonics Meeting, San Diego, CA, Aug 2012.
  17. V. D. Dasika, E. M. Krivoy, H. P. Nair, K. W. Park, E. T. Yu, and S. R. Bank, "InAs Quantum Dot Growth using Bi as a Surfactant," 54th Electronic Materials Conf. (EMC), University Park, PA, Jun 2012.
  18. S. J. Maddox, H. P. Nair, V. D. Dasika, E. M. Krivoy, R. Salas, and S. R. Bank, "Molecular Beam Epitaxial Growth and Optical Quality of InAsBi," 54th Electronic Materials Conf. (EMC), State College, PA, Jun 2012.
  19. E. M. Krivoy, S. J. Maddox, H. P. Nair, A. M. Crook, V. D. Dasika, D. A. Ferrer, and S. R. Bank, "LuAs films and nanostructures," North American Molecular Beam Epitaxy Conf. (NAMBE), San Diego, CA, Aug 2011.
  20. M. A. Wistey, S. R. Bank, H. B. Yuen, T. Gugov, and J. S. Harris, "Protecting Wafer Surface During GaInNAs Plasma Ignition by Use of an Arsenic Cap," North American Molecular Beam Epitaxy Conf. (NAMBE), Banff, Alberta, Canada, Oct 2004.
  21. T. Gugov, V. Gambin, M. A. Wistey, H. B. Yuen, S. R. Bank, and J. S. Harris, "TEM Structural Characterization of GaInNAs and GaInNAsSb Quantum Wells Grown by Molecular Beam Epitaxy," 46th Electronic Materials Conf. (EMC), Notre Dame, IN, Jun 2004.
  22. H. B. Yuen, S. R. Bank, M. A. Wistey, H. P. Bae, J. S. Harris, and A. Moto, "Effects of N2 Flow on GaInNAs Grown by a RF Plasma cell in MBE," Materials Research Symposium (MRS), San Franciso, CA, Apr 2004.
  23. T. Gugov, M. A. Wistey, H. B. Yuen, S. R. Bank, and J. S. Harris, "Structural Characterization of Molecular Beam Epitaxy Grown GaInNAs and GaInNAsSb Quantum Wells by Transmission Electron Microscopy," Materials Research Symposium (MRS), San Francisco, CA, Apr 2004.
  24. H. B. Yuen, V. Lordi, S. R. Bank, M. A. Wistey, J. S. Harris, and A. Moto, "Analysis of Material Properties of GaNAs(Sb) Grown by MBE," Materials Research Symposium (MRS), Boston, MA, Dec 2003.
  25. T. Gugov, V. Gambin, M. A. Wistey, H. B. Yuen, S. R. Bank, and J. S. Harris, "Use of Transmission Electron Microscopy in the Characterization of GaInNAs(Sb) Quantum Well Structures Grown by Molecular Beam Epitaxy," North American Molecular Beam Epitaxy Conf. (NAMBE), Keystone, CO, Oct 2003.
  26. H. B. Yuen, S. R. Bank, M. A. Wistey, A. Moto, and J. S. Harris, "An Investigation of GaNAs(Sb) for Strain Compensated Active Regions at 1. 3 and 1. 55 \µm," 45th Electronic Materials Conf. (EMC), Salt Lake City, UT, Jun 2003.