Publications

Displaying 11 publications
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Journal Article

  1. A. M. Skipper, P. Petluru, D. J. Ironside, A. M. García, A. J. Muhowski, D. Wasserman, and S. R. Bank, "All-epitaxial, laterally structured plasmonic materials," Applied Physics Letters, vol. 120, no. 16, pp. 161103, Dec 2022. Digital object identifier
  2. L. J. Nordin, A. Kamboj, E. Simmons, P. Petluru, A. J. Muhowski, A. F. Briggs, S. R. Bank, V. A. Podolskiy, and D. Wasserman, "Active plasmonic optoelectronics," Active Photonic Platforms XIII, Virtual, Aug 2021.
  3. A. F. Briggs, L. J. Nordin, A. J. Muhowski, P. Petluru, D. Silva, D. Wasserman, and S. R. Bank, "Mid-infrared electroluminescence from type-II In(Ga)Sb quantum dots," Applied Physics Letters, vol. 116, pp. 061103, Feb 2020. Digital object identifier
  4. N. T. Yardimci, R. Salas, E. M. Krivoy, H. P. Nair, S. R. Bank, and M. Jarrahi, "Impact of substrate characteristics on performance of large area plasmonic photoconductive emitters," OSA Optics Express, vol. 23, no. 25, pp. 32035-32043, Dec 2015. Digital object identifier
  5. S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, A. Moto, and J. S. Harris, "Enhanced luminescence in GaInNAsSb quantum wells through variation of the arsenic and antimony fluxes," APL, vol. 88, no. 24, pp. 241923, Jun 2006. Digital object identifier
  6. H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, and A. Moto, "Comparison of GaNAsSb and GaNAs as quantum-well barriers for GaInNAsSb optoelectronic devices operating at 1. 3\—1. 55 \µm," J. Appl. Phys., vol. 96, no. 11, pp. 6375-6381, Dec 2004. Digital object identifier

Conference Paper

  1. A. J. Muhowski, A. F. Briggs, L. J. Nordin, A. M. Skipper, P. Petluru, S. R. Bank, and D. Wasserman, "Towards Single Photon Counting at Room Temperature with Digital Alloy Avalanche Photodiodes," IEEE Research and Applications of Photonics in Defense (RAPID), Miramar Beach, FL, Aug 2020.
  2. A. M. Skipper, P. Petluru, A. M. García, D. J. Ironside, A. J. Muhowski, D. Wasserman, and S. R. Bank, "Mid-Infrared Plasmonic Corrugations," 62nd Electronic Materials Conf. (EMC), Columbus, OH, Jun 2020.
  3. H. B. Yuen, S. R. Bank, M. A. Wistey, H. P. Bae, J. S. Harris, and A. Moto, "Effects of N2 Flow on GaInNAs Grown by a RF Plasma cell in MBE," Materials Research Symposium (MRS), San Franciso, CA, Apr 2004.
  4. H. B. Yuen, V. Lordi, S. R. Bank, M. A. Wistey, J. S. Harris, and A. Moto, "Analysis of Material Properties of GaNAs(Sb) Grown by MBE," Materials Research Symposium (MRS), Boston, MA, Dec 2003.
  5. H. B. Yuen, S. R. Bank, M. A. Wistey, A. Moto, and J. S. Harris, "An Investigation of GaNAs(Sb) for Strain Compensated Active Regions at 1. 3 and 1. 55 \µm," 45th Electronic Materials Conf. (EMC), Salt Lake City, UT, Jun 2003.