Publications

Displaying 11 publications
Quote related keywords (e.g. "66th Electronic Materials Conf.")

Journal Article

  1. G. J. Burek, M. A. Wistey, U. Singisetti, A. Nelson, B. J. Thibeault, S. R. Bank, M. J. Rodwell, and A. C. Gossard, "Height-selective etching for regrowth of self-aligned contacts using MBE," J. Cryst. Growth, vol. 311, no. 7, pp. 1984-1987, Mar 2009. Digital object identifier
  2. S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, A. Moto, and J. S. Harris, "Enhanced luminescence in GaInNAsSb quantum wells through variation of the arsenic and antimony fluxes," APL, vol. 88, no. 24, pp. 241923, Jun 2006. Digital object identifier
  3. H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, and A. Moto, "Comparison of GaNAsSb and GaNAs as quantum-well barriers for GaInNAsSb optoelectronic devices operating at 1. 3\—1. 55 \µm," J. Appl. Phys., vol. 96, no. 11, pp. 6375-6381, Dec 2004. Digital object identifier

Conference Paper

  1. M. A. Wistey, G. J. Burek, U. Singisetti, A. M. Crook, B. J. Thibeault, S. R. Bank, M. J. Rodwell, and A. C. Gossard, "Regrowth of Self-Aligned, Ultra Low Resistance Ohmic Contacts on InGaAs," International Conf. on Molecular Beam Epitaxy (MBE), Vancouver, BC, Canada, Aug 2008.
  2. M. A. Wistey, U. Singisetti, G. J. Burek, B. J. Thibeault, J. Cagnon, S. Stemmer, S. R. Bank, Y. Sun, E. J. Kiewra, D. K. Sadana, A. C. Gossard, and M. J. Rodwell, "Self-aligned III-V MOSFETs for sub-22nm Nodes," SRC Techcon, Austin, TX, Aug 2008.
  3. M. J. Rodwell, E. Lind, Z. Griffith, A. M. Crook, S. R. Bank, U. Singisetti, M. A. Wistey, G. J. Burek, and A. C. Gossard, "On the Feasibility of few-THz Bipolar Transistors," Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM 07. IEEE, pp. 17-21, Sep 2007. Digital object identifier
  4. (Plenary) M. J. Rodwell, E. Lind, Z. Griffith, S. R. Bank, A. M. Crook, U. Singisetti, M. A. Wistey, G. J. Burek, and A. C. Gossard, "Frequency limits of InP-based integrated circuits," 19th International Conf. on Indium-Phosphide and Related Materials (IPRM), Matsue, Japan, pp. 9-13, May 2007. Digital object identifier
  5. S. Vaithilingam, I. O. Wygant, S. D. Sifferman, X. Zhuang, Y. Furukawa, O. Oralkan, S. Keren, S. S. Gambhir, and B. T. Khuri-Yakub, "Tomographic Photoacoustic Imaging Using Capacitive Micromachined Ultrasonic Transducer (CMUT) Technology," 2006 IEEE Ultrasonics Symposium, Ultrasonics Symposium, 2006. IEEE, pp. 397-400, Oct 2006.
  6. H. B. Yuen, S. R. Bank, M. A. Wistey, H. P. Bae, J. S. Harris, and A. Moto, "Effects of N2 Flow on GaInNAs Grown by a RF Plasma cell in MBE," Materials Research Symposium (MRS), San Franciso, CA, Apr 2004.
  7. H. B. Yuen, V. Lordi, S. R. Bank, M. A. Wistey, J. S. Harris, and A. Moto, "Analysis of Material Properties of GaNAs(Sb) Grown by MBE," Materials Research Symposium (MRS), Boston, MA, Dec 2003.
  8. H. B. Yuen, S. R. Bank, M. A. Wistey, A. Moto, and J. S. Harris, "An Investigation of GaNAs(Sb) for Strain Compensated Active Regions at 1. 3 and 1. 55 \µm," 45th Electronic Materials Conf. (EMC), Salt Lake City, UT, Jun 2003.