Publications

Displaying 5 publications
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Journal Article

  1. R. Maiti, C. Patil, M. A. S. R. Saadi, T. Xie, J. G. Azadani, B. Uluutku, R. Amin, A. F. Briggs, M. Miscuglio, D. Van. Thourhout, S. D. Solares, T. Low, R. Agarwal, S. R. Bank, and V. J. Sorger, "Strain-engineered high-responsivity MoTe2 photodetector for silicon photonic integrated circuits," Nature Photonics, Jun 2020. Digital object identifier
  2. X. Li, V. D. Dasika, P. Li, L. Ji, S. R. Bank, and E. T. Yu, "Minimized open-circuit voltage reduction in GaAs/InGaAs quantum well solar cells with bandgap-engineered graded quantum well depths," APL, vol. 105, no. 12, pp. 123906, Sep 2014. Digital object identifier
  3. H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, M. Seong, S. Yoon, R. Kudrawiec, and J. Misiewicz, "Improved optical quality of GaNAsSb in the dilute Sb limit," J. Appl. Phys., vol. 97, no. 11, pp. 113510, Dec 2005. Digital object identifier

Conference Paper

  1. R. Maiti, C. Patil, T. Xie, J. G. Azadani, R. Amin, M. Miscuglio, D. Van. Thourhout, T. Low, S. R. Bank, and V. J. Sorger, "Strain-Engineered MoTe2 Photodetector in Silicon Photonics at 1550 nm," Conference on Lasers and Electro-Optics (CLEO), Washington, DC, Jun 2020.
  2. H. B. Yuen, M. Seong, S. Yoon, R. Kudrawiec, S. R. Bank, M. A. Wistey, J. Misiewicz, A. Mascarenhas, and J. S. Harris, "Improved Optical Quality from Indium-Free GaNAsSb in the Dilute Sb (<3%) Limit," Materials Research Symposium (MRS), Boston, MA, Dec 2004.