Publications

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Journal Article

  1. K. W. Park, E. M. Krivoy, H. P. Nair, S. R. Bank, and E. T. Yu, "Cross-sectional scanning thermal microscopy of ErAs/GaAs superlattices grown by molecular beam epitaxy," Nanotechnology, vol. 26, no. 26, pp. 265701, Jul 2015. Digital object identifier
  2. V. D. Dasika, E. M. Krivoy, H. P. Nair, S. J. Maddox, K. W. Park, D. Jung, M. L. Lee, E. T. Yu, and S. R. Bank, "Increased InAs Quantum Dot Size and Density using Bismuth as a Surfactant," APL, vol. 105, no. 25, pp. 253104, Dec 2014. Digital object identifier
  3. K. W. Park, H. P. Nair, A. M. Crook, S. R. Bank, and E. T. Yu, "Quantitative scanning thermal microscopy of ErAs/GaAs superlattice structures grown by molecular beam epitaxy," APL, vol. 102, no. 6, pp. 061912, Feb 2013. Digital object identifier
  4. K. W. Park, V. D. Dasika, H. P. Nair, A. M. Crook, S. R. Bank, and E. T. Yu, "Conductivity and structure of ErAs nanoparticles embedded in GaAs pn junctions analyzed via conductive atomic force microscopy," APL, vol. 100, no. 23, pp. 233117, Jun 2012. Digital object identifier
  5. K. W. Park, H. P. Nair, A. M. Crook, S. R. Bank, and E. T. Yu, "Scanning capacitance microscopy of ErAs nanoparticles embedded in GaAs pn junctions," APL, vol. 99, pp. 133114, Sep 2011. Digital object identifier
  6. A. M. Mintairov, K. Sun, J. L. Merz, H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, G. Peake, A. Egorov, V. Ustinov, R. Kudrawiec, and J. Misiewicz, "Atomic arrangement and emission properties of GaAs(In, Sb)N quantum wells," Semic. Sci. Technol., vol. 24, no. 7, pp. 075013, Jul 2009. Digital object identifier
  7. R. Kudrawiec, P. Poloczek, J. Misiewicz, H. P. Bae, T. Sarmiento, S. R. Bank, H. B. Yuen, M. A. Wistey, and J. S. Harris, "Contactless electroreflectance of GaInNAsSb/GaNAs/GaAs quantum wells emitting at 1. 5\—1. 65 \µm: Broadening of the fundamental transition," APL, vol. 94, no. 3, pp. 031903, Jan 2009. Digital object identifier
  8. R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, and J. Misiewicz, "On the Fermi level pinning in as-grown GaInNAs(Sb)/GaAs quantum wells with indium content of 8%\—32%," J. Appl. Phys., vol. 104, no. 3, pp. 033526, Aug 2008. Digital object identifier
  9. R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, and J. Misiewicz, "Contactless electroreflectance approach to study the Fermi level position in GaInNAs/GaAs quantum wells," J. Appl. Phys., vol. 102, no. 11, pp. 113501, Dec 2007. Digital object identifier
  10. S. R. Bank, H. P. Bae, L. L. Goddard, H. B. Yuen, M. A. Wistey, R. Kudrawiec, and J. S. Harris, "Recent Progress on 1. 55-\µm Dilute-Nitride Lasers," IEEE J. Quantum Electron., vol. 43, no. 9, pp. 773-785, Sep 2007. Digital object identifier
  11. J. S. Harris, R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, D. B. Jackrel, E. R. Pickett, T. Sarmiento, L. L. Goddard, V. Lordi, and T. Gugov, "Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications," Physica Status Solidi (b), vol. 244, no. 8, pp. 2707-2729, Jul 2007. Digital object identifier
  12. R. Kudrawiec, S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, L. L. Goddard, J. S. Harris, M. Gladysiewicz, M. Motyka, and J. Misiewicz, "Conduction band offset for Ga0. 62In0. 38NxAs0. 991 - xSb0. 009/GaNyAs1 - y/GaAs systems with the ground state transition at 1. 5-1. 65 \µm," APL, vol. 90, no. 13, pp. 131905, Mar 2007. Digital object identifier
  13. R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, and J. Misiewicz, "Fermi level shift in GaInNAsSb/GaAs quantum wells upon annealing studied by contactless electroreflectance," APL, vol. 90, no. 6, pp. 061902, Feb 2007. Digital object identifier
  14. R. Kudrawiec, H. B. Yuen, M. Motyka, M. Gladysiewicz, J. Misiewicz, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "Contactless electroreflectance of GaInNAsSb∕GaAs single quantum wells with indium content of 8%–32%," J. of Appl. Phys., vol. 101, no. 1, pp. 013504, Jan 2007. Digital object identifier
  15. R. Kudrawiec, M. Gladysiewicz, J. Misiewicz, H. B. Yuen, S. R. Bank, M. A. Wistey, H. P. Bae, and J. S. Harris, "Interband transitions in GaN0. 02As0. 98-xSbx/GaAs (0<x<0. 11) single quantum wells studied by contactless electroreflectance spectroscopy," Phys. Rev. B, vol. 73, pp. 245413, Jun 2006. Digital object identifier
  16. R. Kudrawiec, M. Motyka, M. Gladysiewicz, J. Misiewicz, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "Band gap discontinuity in Ga0. 9In0. 1N0. 027As0. 973 - xSbx/GaAs single quantum wells with 0 ≤ x < 0. 06 studied by contactless electroreflectance spectroscopy," APL, vol. 88, no. 22, pp. 221113, May 2006. Digital object identifier
  17. M. A. Wistey, S. R. Bank, H. P. Bae, H. B. Yuen, E. R. Pickett, L. L. Goddard, and J. S. Harris, "GaInNAsSb/GaAs vertical cavity surface emitting lasers at 1534 nm," Electron. Lett., vol. 42, no. 5, pp. 282-283, Mar 2006. Digital object identifier
  18. S. R. Bank, H. P. Bae, H. B. Yuen, M. A. Wistey, L. L. Goddard, and J. S. Harris, "Room-temperature continuous-wave 1. 55 \µm GaInNAsSb laser on GaAs," Electron. Lett., vol. 42, no. 3, pp. 156-157, Feb 2006. Digital object identifier
  19. S. R. Bank, L. L. Goddard, M. A. Wistey, H. B. Yuen, and J. S. Harris, "On the temperature sensitivity of 1. 5-\µm GaInNAsSb lasers," IEEE J. Sel. Topics Quantum Electron., vol. 11, no. 5, pp. 1089-1098, Sep 2005. Digital object identifier
  20. S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, H. P. Bae, and J. S. Harris, "Molecular-beam epitaxy growth of low-threshold cw GaInNAsSb lasers at 1. 5 \µm," J. Vac. Sci. Technol. B, vol. 23, no. 3, pp. 1337-1340, Jun 2005. Digital object identifier
  21. M. A. Wistey, S. R. Bank, H. B. Yuen, L. L. Goddard, T. Gugov, and J. S. Harris, "Protecting wafer surface during plasma ignition using an arsenic cap," J. Vac. Sci. Technol. B, vol. 23, no. 3, pp. 1324-1327, May 2005. Digital object identifier
  22. L. L. Goddard, S. R. Bank, M. A. Wistey, H. B. Yuen, and J. S. Harris, "High performance GaInNAsSb/GaAs lasers at 1. 5 \µm," Proc. SPIE, vol. 2, pp. 2-5, Apr 2005. Digital object identifier
  23. L. L. Goddard, S. R. Bank, M. A. Wistey, H. B. Yuen, Z. Rao, and J. S. Harris, "Recombination, gain, band structure, efficiency, and reliability of 1. 5-\µm GaInNAsSb/GaAs lasers," J. Appl. Phys., vol. 97, no. 8, pp. 083101, Apr 2005. Digital object identifier
  24. R. Kudrawiec, K. Ryczko, J. Misiewicz, H. B. Yuen, S. R. Bank, M. A. Wistey, H. P. Bae, and J. S. Harris, "Band-gap discontinuity in GaN0. 02As0. 87Sb0. 11/GaAs single-quantum wells investigated by photoreflectance spectroscopy," APL, vol. 86, no. 14, pp. 141908, Mar 2005. Digital object identifier
  25. R. Kudrawiec, P. Sitarek, J. Misiewicz, S. R. Bank, H. B. Yuen, M. A. Wistey, and J. S. Harris, "Interference effects in electromodulation spectroscopy applied to GaAs-based structures: A comparison of photoreflectance and contactless electroreflectance," APL, vol. 86, no. 9, pp. 091115, Feb 2005. Digital object identifier
  26. R. Kudrawiec, H. B. Yuen, K. Ryczko, J. Misiewicz, S. R. Bank, M. A. Wistey, H. P. Bae, and J. S. Harris, "Photoreflectance and photoluminescence investigations of a step-like GaInNAsSb/GaAsN/GaAs quantum well tailored at 1. 5 \µm: The energy level structure and the Stokes shift," J. Appl. Phys., vol. 97, no. 5, pp. 053515, Feb 2005. Digital object identifier
  27. H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, M. Seong, S. Yoon, R. Kudrawiec, and J. Misiewicz, "Improved optical quality of GaNAsSb in the dilute Sb limit," J. Appl. Phys., vol. 97, no. 11, pp. 113510, Dec 2005. Digital object identifier
  28. D. Gollub, M. Kamp, A. Forchel, J. Seufert, S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, and J. S. Harris, "Continuous-wave operation of GaInNAsSb distributed feedback lasers at 1. 5 \µm," Electron. Lett., vol. 40, no. 23, pp. 1487-1488, Nov 2004. Digital object identifier
  29. S. R. Bank, M. A. Wistey, L. L. Goddard, H. B. Yuen, H. P. Bae, and J. S. Harris, "High-performance 1. 5 \µm GaInNAsSb lasers grown on GaAs," Electron. Lett., vol. 40, no. 19, pp. 1186-1187, Sep 2004. Digital object identifier
  30. S. R. Bank, M. A. Wistey, L. L. Goddard, H. B. Yuen, V. Lordi, and J. S. Harris, "Low-threshold continuous-wave 1. 5-\µm GaInNAsSb lasers grown on GaAs," IEEE J. Quantum Electron., vol. 40, no. 6, pp. 656-664, Jun 2004. Digital object identifier
  31. M. A. Wistey, S. R. Bank, H. B. Yuen, L. L. Goddard, and J. S. Harris, "GaInNAs(Sb) vertical-cavity surface-emitting lasers at 1. 460 \µm," J. Vac. Sci. Technol. B, vol. 22, no. 3, pp. 1562-1564, May 2004. Digital object identifier
  32. M. A. Wistey, S. R. Bank, H. B. Yuen, L. L. Goddard, and J. S. Harris, "Monolithic, GaInNAsSb VCSELs at 1. 46 \µm on GaAs by MBE," Electron. Lett., vol. 39, no. 25, pp. 1822-1823, Dec 2003. Digital object identifier
  33. S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, W. Ha, and J. S. Harris, "Low-threshold CW GaInNAsSb/GaAs laser at 1. 49 \µm," Electron. Lett., vol. 39, no. 20, pp. 1445-1446, Oct 2003. Digital object identifier
  34. S. R. Bank, W. Ha, V. Gambin, M. A. Wistey, H. B. Yuen, L. L. Goddard, S. Kim, and J. S. Harris, "1. 5 \µm GaInNAs(Sb) lasers grown on GaAs by MBE," J. Cryst. Growth, vol. 251, no. 1-4, pp. 367-371, Apr 2003. Digital object identifier

Conference Paper

  1. V. D. Dasika, E. M. Krivoy, H. P. Nair, S. J. Maddox, K. W. Park, D. Jung, M. L. Lee, E. T. Yu, and S. R. Bank, "InAs Quantum Dot Growth using Bismuth as a Surfactant for Optoelectronic Applications," Conf. on Lasers and Electro Optics (CLEO), San Jose, CA, Jun 2013.
  2. K. W. Park, H. P. Nair, E. M. Krivoy, S. R. Bank, and E. T. Yu, "Thermal characterization of rare earth/III-V superlattice and nanocomposite structures using scanned probe microscopy," 55th Electronic Materials Conf. (EMC), South Bend, IN, Jun 2013.
  3. K. W. Park, H. P. Nair, S. R. Bank, and E. T. Yu, "Proximal Probe Characterization of Thermal Conductivity in ErAs/GaAs Superlattice Grown by Molecular Beam Epitaxy," 40th Conference on the Physics & Chemistry of Surfaces & Interfaces, Waikoloa, HI, Jan 2013.
  4. K. W. Park, V. D. Dasika, H. P. Nair, A. M. Crook, S. R. Bank, and E. T. Yu, "Scanned Probe Characterization of ErAs/GaAs Nanostructures below the Resolution Limit via Statistical Analysis," International Symposium on Compound Semiconductors (ISCS), Santa Barbara, CA, Aug 2012.
  5. V. D. Dasika, E. M. Krivoy, H. P. Nair, K. W. Park, E. T. Yu, and S. R. Bank, "InAs Quantum Dot Growth using Bi as a Surfactant," 54th Electronic Materials Conf. (EMC), University Park, PA, Jun 2012.
  6. A. M. Crook, H. P. Nair, K. W. Park, E. T. Yu, and S. R. Bank, "Investigating the MBE Overgrowth of Semimetallic Nanoparticles for Nanophotonics," North American Molecular Beam Epitaxy Conf. (NAMBE), Breckenridge, CO, Sep 2010.
  7. H. P. Nair, A. M. Crook, K. W. Park, D. A. Ferrer, S. K. Banerjee, E. T. Yu, and S. R. Bank, "Investigation of MBE-grown ErAs nanoparticle morphology for high-performance optical and electronic devices," North American Molecular Beam Epitaxy Conference (NAMBE), Breckenridge, CO, Sep 2010.
  8. K. W. Park, A. M. Crook, H. P. Nair, S. R. Bank, and E. T. Yu, "Scanned Probe Characterization of Self-Assembled ErAs/GaAs Semimetal/Semiconductor Nanostructures Grown by Molecular Beam Epitaxy," 52nd Electronic Materials Conf. (EMC), Notre Dame, IN, Jun 2010.
  9. A. M. Crook, H. P. Nair, K. W. Park, E. T. Yu, and S. R. Bank, "Overgrowth Investigation of Epitaxial Semimetallic Nanoparticles for Photonic Devices," 52nd Electronic Materials Conf. (EMC), Notre Dame, IN, Jun 2010.
  10. A. M. Mintairov, K. Sun, J. L. Merz, H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, G. Peake, A. Egorov, V. Ustinov, R. Kudrawiec, and J. Misiewicz, "Atomic arrangement and emission properties of GaAs(In,Sb)N dilute nitride quantum wells," 13th Advanced Hereostructures and Nanostructures Workshop (AHNW), Jun 2008.
  11. S. R. Bank, H. P. Bae, L. L. Goddard, H. B. Yuen, M. A. Wistey, and J. S. Harris, "Very Low-Threshold 1. 55-\µm Dilute-Nitride Lasers," 64th Device Research Conf. (DRC), Jun 2006.
  12. S. R. Bank, H. P. Bae, H. B. Yuen, M. A. Wistey, L. L. Goddard, J. S. Harris, R. Kudrawiec, M. Gladysiewicz, M. Motyka, and J. Misiewicz, "Low-Threshold Continuous-Wave 1. 55-\µm GaInNAsSb lasers," Conf. on Lasers and Electro Optics (CLEO), Long Beach, CA, May 2006.
  13. S. R. Bank, H. P. Bae, H. B. Yuen, L. L. Goddard, M. A. Wistey, T. Sarmiento, and J. S. Harris, "Low-Threshold CW 1. 55-\µm GaAs-Based Lasers," Optical Fiber Communication Conf. (OFC), Anaheim, CA, Mar 2006.
  14. L. L. Goddard, S. R. Bank, M. A. Wistey, H. B. Yuen, H. P. Bae, and J. S. Harris, "Differential Gain and Nonlinear Gain Compression of GaInNAsSb/GaAs Lasers at 1. 5 \µm," Conf. on Lasers and ElectroOptics (CLEO), Baltimore, MD, May 2005.
  15. S. R. Bank, M. A. Wistey, L. L. Goddard, H. B. Yuen, H. P. Bae, and J. S. Harris, "1. 55 \µm GaInNAsSb Lasers on GaAs," Conf. on Lasers and Electro-Optics (CLEO), Baltimore, MD, May 2005.
  16. S. R. Bank, M. A. Wistey, H. B. Yuen, H. P. Bae, L. L. Goddard, and J. S. Harris, "Defect Modification in GaInNAsSb Growth with Insertion of GaAs Prelayers," Materials Research Symposium (MRS), San Francisco, CA, Apr 2005.