Publications
Journal Article
- J. Zheng, S. Z. Ahmed, Y. Yuan, A. H. Jones, Y. Tan, A. K. Rockwell, S. D. March, S. R. Bank, A. W. Ghosh, and J. C. Campbell, "Full band Monte Carlo simulation of AlInAsSb digital alloys," InfoMat, vol. 2, no. 06, pp. 1236-1240, Nov 2020.
- J. Zheng, S. Z. Ahmed, Y. Yuan, A. H. Jones, Y. Tan, A. K. Rockwell, S. D. March, S. R. Bank, A. W. Ghosh, and J. C. Campbell, "Full band Monte Carlo simulation of AlInAsSb digital alloys," InfoMat, vol. 2, no. 6, pp. 1236-1240, Mar 2020.
- J. Zheng, Y. Yuan, Y. Tan, Y. Peng, A. K. Rockwell, S. R. Bank, A. W. Ghosh, and J. C. Campbell, "Simulations for InAlAs digital alloy avalanche photodiodes," Applied Physics Letters, vol. 115, no. 17, pp. 171106, Oct 2019.
- J. Zheng, A. H. Jones, Y. Tan, A. K. Rockwell, S. D. March, S. Z. Ahmed, C. A. Dukes, A. W. Ghosh, S. R. Bank, and J. C. Campbell, "Characterization of band offsets in AlxIn1-xAsySb1-y alloys with varying Al composition," Applied Physics Letters, vol. 115, no. 12, pp. 122105, Sep 2019.
- Y. Yuan, J. Zheng, K. Sun, A. H. Jones, A. K. Rockwell, S. D. March, Y. Shen, S. R. Bank, and J. C. Campbell, "Stark‐Localization‐Limited Franz–Keldysh Effect in InAlAs Digital Alloys," physica status solidi (RRL) – Rapid Research Letters, vol. 13, no. 9, pp. 1900272, Jun 2019.
- Y. Yuan, A. K. Rockwell, Y. Peng, J. Zheng, S. D. March, A. H. Jones, S. R. Bank, and J. C. Campbell, "Comparison of Different Period Digital Alloy Al0. 7InAsSb Avalanche Photodiodes," Journal of Lightwave Technology, vol. 37, no. 14, pp. 3647-3654, May 2019.
- Y. Yuan, J. Zheng, A. K. Rockwell, S. D. March, S. R. Bank, and J. C. Campbell, "AlInAsSb Impact Ionization Coefficients," IEEE Photonics Technology Letters, vol. 31, no. 4, Feb 2019.
- J. Zheng, Y. Yuan, Y. Tan, Y. Peng, A. K. Rockwell, S. R. Bank, A. W. Ghosh, and J. C. Campbell, "Digital Alloy InAlAs Avalanche Photodiodes," Journal of Lightwave Technology, vol. 36, no. 17, pp. 3580-3585, Sep 2018.
- Y. Yuan, J. Zheng, Y. Tan, Y. Peng, A. K. Rockwell, S. R. Bank, A. W. Ghosh, and J. C. Campbell, "Temperature dependence of the ionization coefficients of InAlAs and AlGaAs digital alloys," Photon. Res., vol. 6, no. 8, pp. 794-799, Aug 2018.
- M. Ren, S. J. Maddox, M. E. Woodson, Y. Chen, S. R. Bank, and J. C. Campbell, "AlInAsSb separate absorption, charge, and multiplication avalanche photodiodes," Applied Physics Letters, vol. 108, no. 19, pp. 191108, May 2016.
- M. Ren, S. J. Maddox, Y. Chen, M. E. Woodson, J. C. Campbell, and S. R. Bank, "AlInAsSb/GaSb staircase avalanche photodiode," APL, vol. 108, no. 8, pp. 081101, Feb 2016.
- M. E. Woodson, M. Ren, S. J. Maddox, Y. Chen, S. R. Bank, and J. C. Campbell, "Low-noise AlInAsSb avalanche photodiode," APL, vol. 108, no. 8, pp. 081102, Feb 2016.
- S. R. Bank, H. P. Bae, L. L. Goddard, H. B. Yuen, M. A. Wistey, R. Kudrawiec, and J. S. Harris, "Recent Progress on 1. 55-\µm Dilute-Nitride Lasers," IEEE J. Quantum Electron., vol. 43, no. 9, pp. 773-785, Sep 2007.
- J. S. Harris, R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, D. B. Jackrel, E. R. Pickett, T. Sarmiento, L. L. Goddard, V. Lordi, and T. Gugov, "Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications," Physica Status Solidi (b), vol. 244, no. 8, pp. 2707-2729, Jul 2007.
- R. Kudrawiec, S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, L. L. Goddard, J. S. Harris, M. Gladysiewicz, M. Motyka, and J. Misiewicz, "Conduction band offset for Ga0. 62In0. 38NxAs0. 991 - xSb0. 009/GaNyAs1 - y/GaAs systems with the ground state transition at 1. 5-1. 65 \µm," APL, vol. 90, no. 13, pp. 131905, Mar 2007.
- M. A. Wistey, S. R. Bank, H. P. Bae, H. B. Yuen, E. R. Pickett, L. L. Goddard, and J. S. Harris, "GaInNAsSb/GaAs vertical cavity surface emitting lasers at 1534 nm," Electron. Lett., vol. 42, no. 5, pp. 282-283, Mar 2006.
- S. R. Bank, H. P. Bae, H. B. Yuen, M. A. Wistey, L. L. Goddard, and J. S. Harris, "Room-temperature continuous-wave 1. 55 \µm GaInNAsSb laser on GaAs," Electron. Lett., vol. 42, no. 3, pp. 156-157, Feb 2006.
- S. R. Bank, L. L. Goddard, M. A. Wistey, H. B. Yuen, and J. S. Harris, "On the temperature sensitivity of 1. 5-\µm GaInNAsSb lasers," IEEE J. Sel. Topics Quantum Electron., vol. 11, no. 5, pp. 1089-1098, Sep 2005.
- S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, H. P. Bae, and J. S. Harris, "Molecular-beam epitaxy growth of low-threshold cw GaInNAsSb lasers at 1. 5 \µm," J. Vac. Sci. Technol. B, vol. 23, no. 3, pp. 1337-1340, Jun 2005.
- M. A. Wistey, S. R. Bank, H. B. Yuen, L. L. Goddard, T. Gugov, and J. S. Harris, "Protecting wafer surface during plasma ignition using an arsenic cap," J. Vac. Sci. Technol. B, vol. 23, no. 3, pp. 1324-1327, May 2005.
- L. L. Goddard, S. R. Bank, M. A. Wistey, H. B. Yuen, Z. Rao, and J. S. Harris, "Recombination, gain, band structure, efficiency, and reliability of 1. 5-\µm GaInNAsSb/GaAs lasers," J. Appl. Phys., vol. 97, no. 8, pp. 083101, Apr 2005.
- L. L. Goddard, S. R. Bank, M. A. Wistey, H. B. Yuen, and J. S. Harris, "High performance GaInNAsSb/GaAs lasers at 1. 5 \µm," Proc. SPIE, vol. 2, pp. 2-5, Apr 2005.
- D. Gollub, M. Kamp, A. Forchel, J. Seufert, S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, and J. S. Harris, "Continuous-wave operation of GaInNAsSb distributed feedback lasers at 1. 5 \µm," Electron. Lett., vol. 40, no. 23, pp. 1487-1488, Nov 2004.
- S. R. Bank, M. A. Wistey, L. L. Goddard, H. B. Yuen, H. P. Bae, and J. S. Harris, "High-performance 1. 5 \µm GaInNAsSb lasers grown on GaAs," Electron. Lett., vol. 40, no. 19, pp. 1186-1187, Sep 2004.
- S. R. Bank, M. A. Wistey, L. L. Goddard, H. B. Yuen, V. Lordi, and J. S. Harris, "Low-threshold continuous-wave 1. 5-\µm GaInNAsSb lasers grown on GaAs," IEEE J. Quantum Electron., vol. 40, no. 6, pp. 656-664, Jun 2004.
- M. A. Wistey, S. R. Bank, H. B. Yuen, L. L. Goddard, and J. S. Harris, "GaInNAs(Sb) vertical-cavity surface-emitting lasers at 1. 460 \µm," J. Vac. Sci. Technol. B, vol. 22, no. 3, pp. 1562-1564, May 2004.
- M. A. Wistey, S. R. Bank, H. B. Yuen, L. L. Goddard, and J. S. Harris, "Monolithic, GaInNAsSb VCSELs at 1. 46 \µm on GaAs by MBE," Electron. Lett., vol. 39, no. 25, pp. 1822-1823, Dec 2003.
- S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, W. Ha, and J. S. Harris, "Low-threshold CW GaInNAsSb/GaAs laser at 1. 49 \µm," Electron. Lett., vol. 39, no. 20, pp. 1445-1446, Oct 2003.
- S. R. Bank, W. Ha, V. Gambin, M. A. Wistey, H. B. Yuen, L. L. Goddard, S. Kim, and J. S. Harris, "1. 5 \µm GaInNAs(Sb) lasers grown on GaAs by MBE," J. Cryst. Growth, vol. 251, no. 1-4, pp. 367-371, Apr 2003.
Conference Paper
- S. D. March, A. H. Jones, A. K. Rockwell, M. Ren, Y. Chen, M. E. Woodson, S. J. Maddox, J. C. Campbell, and S. R. Bank, "Modeling and Measurement of Carrier Trapping and Tunneling in AlxIn1-xAsySb1-y Digital Alloys," 61st Electronic Materials Conf. (EMC), Ann Arbor, MI, Jun 2019.
- S. R. Bank, J. C. Campbell, S. J. Maddox, A. K. Rockwell, M. E. Woodson, M. Ren, A. H. Jones, S. D. March, J. Zheng, and Y. Yuan, "Digital alloy growth of low-noise avalanche photodiodes," IEEE RAPID, Miramar Beach, FL, Aug 2018.
- (Invited) S. R. Bank, J. C. Campbell, S. J. Maddox, M. Ren, A. K. Rockwell, M. E. Woodson, A. H. Jones, S. D. March, J. Zheng, and Y. Yuan, "Low-Noise Staircase and Conventional Avalanche Photodiodes," International Nano-Optoelectronics Workshop (iNOW), Berkeley, CA, Jul 2018.
- M. Ren, M. E. Woodson, Y. Chen, J. C. Campbell, S. J. Maddox, and S. R. Bank, "AlInAsSb Separate Absorption, Charge, and Multiplication Avalanche Photodiodes," 29th IEEE Photonics Conference (IPC), Waikoloa Village, HI, Oct 2016.
- S. J. Maddox, M. Ren, A. K. Rockwell, Y. Chen, M. E. Woodson, J. C. Campbell, and S. R. Bank, "Low-Noise High-Gain Tunneling Staircase Photodetector," 74th Device Research Conf. (DRC), Newark, DE, Jun 2016.
- (Late News) M. Ren, S. J. Maddox, A. K. Rockwell, Y. Chen, M. E. Woodson, J. C. Campbell, and S. R. Bank, "AlInAsSb Separate Absorption, Charge, and Multiplication Avalanche Photodiodes," 74th Device Research Conf. (DRC), Newark, DE, Jun 2016.
- (Invited) M. Ren, S. J. Maddox, M. E. Woodson, Y. Chen, S. R. Bank, and J. C. Campbell, "Low Excess Noise AlxIn1-xAsySb1-y (x: 0. 3~0. 7) Avalanche Photodiodes," IEEE/OSA Conf. on Lasers and Electro Optics (CLEO), San Jose, CA, May 2016.
- S. R. Bank, H. P. Bae, L. L. Goddard, H. B. Yuen, M. A. Wistey, and J. S. Harris, "Very Low-Threshold 1. 55-\µm Dilute-Nitride Lasers," 64th Device Research Conf. (DRC), Jun 2006.
- S. R. Bank, H. P. Bae, H. B. Yuen, M. A. Wistey, L. L. Goddard, J. S. Harris, R. Kudrawiec, M. Gladysiewicz, M. Motyka, and J. Misiewicz, "Low-Threshold Continuous-Wave 1. 55-\µm GaInNAsSb lasers," Conf. on Lasers and Electro Optics (CLEO), Long Beach, CA, May 2006.
- S. R. Bank, H. P. Bae, H. B. Yuen, L. L. Goddard, M. A. Wistey, T. Sarmiento, and J. S. Harris, "Low-Threshold CW 1. 55-\µm GaAs-Based Lasers," Optical Fiber Communication Conf. (OFC), Anaheim, CA, Mar 2006.
- L. L. Goddard, S. R. Bank, M. A. Wistey, H. B. Yuen, H. P. Bae, and J. S. Harris, "Differential Gain and Nonlinear Gain Compression of GaInNAsSb/GaAs Lasers at 1. 5 \µm," Conf. on Lasers and ElectroOptics (CLEO), Baltimore, MD, May 2005.
- S. R. Bank, M. A. Wistey, L. L. Goddard, H. B. Yuen, H. P. Bae, and J. S. Harris, "1. 55 \µm GaInNAsSb Lasers on GaAs," Conf. on Lasers and Electro-Optics (CLEO), Baltimore, MD, May 2005.
- S. R. Bank, M. A. Wistey, H. B. Yuen, H. P. Bae, L. L. Goddard, and J. S. Harris, "Defect Modification in GaInNAsSb Growth with Insertion of GaAs Prelayers," Materials Research Symposium (MRS), San Francisco, CA, Apr 2005.
- L. L. Goddard, S. R. Bank, M. A. Wistey, H. B. Yuen, and J. S. Harris, "High performance GaInNAsSb/GaAs lasers at 1. 5 \µm," SPIE Photonics West, San Jose, CA, Jan 2005.
- S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, H. P. Bae, and J. S. Harris, "MBE Growth of Low Threshold CW GaInNAsSb Lasers at 1. 5 \µm," North American Molecular Beam Epitaxy Conf. (NAMBE), Banff, Alberta, Canada, Oct 2004.
- S. R. Bank, M. A. Wistey, L. L. Goddard, H. B. Yuen, and J. S. Harris, "The Role and Suppression of Carrier Leakage in 1. 5 \µm GaInNAsSb/GaAs Lasers," 62nd Device Research Conf. (DRC), Notre Dame, IN, Jun 2004.
- L. L. Goddard, S. R. Bank, M. A. Wistey, H. B. Yuen, and J. S. Harris, "Measurements of Intrinsic Properties of High Power CW Single Quantum Well GaInNAsSb/GaAs Lasers at 1. 5 \µm," Conf. on Lasers and Electro-Optics (CLEO), May 2004.
- S. R. Bank, L. L. Goddard, M. A. Wistey, H. B. Yuen, and J. S. Harris, "The Temperature Sensitivity of 1. 5 \µm GaInNAsSb Lasers on GaAs," Conf. on Lasers and Electro-Optics (CLEO), May 2004.
- S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, and J. S. Harris, "Progress Towards High Power 1. 5 \µm GaInNAsSb/GaAs Lasers for Raman Amplifiers," Optical Fiber Communication Conf. (OFC), Los Angeles, CA, Feb 2004.
- M. A. Wistey, S. R. Bank, H. B. Yuen, L. L. Goddard, and J. S. Harris, "Real-Time Ion Count from Nitrogen Plasma Source," North American Molecular Beam Epitaxy Conf. (NAMBE), Keystone, CO, Oct 2003.
- S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, and J. S. Harris, "Low Threshold, CW, Room Temperature 1. 49 \µm GaAs-Based Lasers," International Symposium on Compound Semiconductors (ISCS), San Diego, CA, Aug 2003.