Publications

Displaying 43 publications
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Journal Article

  1. R. H. El-Jaroudi, K. M. McNicholas, H. S. Maczko, R. Kudrawiec, and S. R. Bank, "Growth advancement of GaAs-based BGaInAs alloys emitting at 1. 3 um by molecular beam epitaxy," Journal of Crystal Growth and Design, May 2022. Digital object identifier
  2. H. S. Maczko, R. H. El-Jaroudi, J. Kopaczek, S. R. Bank, and R. Kudrawiec, "Photoreflectance studies of the band gap alignments in boron diluted BGaInAs/GaAs quantum wells," Optical Materials Express, vol. 12, no. 8, pp. 3118-3131, Dec 2022. Digital object identifier
  3. J. Kopaczek, F. Dybala, S. J. Zelewski, N. Sokolowski, W. Zuraw, K. M. McNicholas, R. H. El-Jaroudi, R. C. White, S. R. Bank, and R. Kudrawiec, "Photoreflectance studies of temperature and hydrostatic pressure dependencies of direct optical transitions in BGaAs alloys grown on GaP," Journal of Physics D: Applied Physics, vol. 55, no. 1, pp. 015107, Oct 2021. Digital object identifier
  4. R. Kudrawiec, M. Polak, K. M. McNicholas, J. Kopaczek, M. A. Wistey, and S. R. Bank, "Bowing of the band gap and spin-orbit splitting energy in BGaAs," Materials Research Express, vol. 6, no. 12, pp. 125913, Jan 2020. Digital object identifier
  5. K. W. Park, E. M. Krivoy, H. P. Nair, S. R. Bank, and E. T. Yu, "Cross-sectional scanning thermal microscopy of ErAs/GaAs superlattices grown by molecular beam epitaxy," Nanotechnology, vol. 26, no. 26, pp. 265701, Jul 2015. Digital object identifier
  6. V. D. Dasika, E. M. Krivoy, H. P. Nair, S. J. Maddox, K. W. Park, D. Jung, M. L. Lee, E. T. Yu, and S. R. Bank, "Increased InAs Quantum Dot Size and Density using Bismuth as a Surfactant," APL, vol. 105, no. 25, pp. 253104, Dec 2014. Digital object identifier
  7. K. W. Park, H. P. Nair, A. M. Crook, S. R. Bank, and E. T. Yu, "Quantitative scanning thermal microscopy of ErAs/GaAs superlattice structures grown by molecular beam epitaxy," APL, vol. 102, no. 6, pp. 061912, Feb 2013. Digital object identifier
  8. R. Kudrawiec, H. P. Nair, M. Latkowska, K. Misiewics, S. R. Bank, and W. Walukiewics, "Contactless electroreflectance study of Fermi level pinning on GaSb surface in n-type and p-type GaSb Van Hoof structures," J. Appl. Phys., vol. 112, pp. 123513, Dec 2012. Digital object identifier
  9. K. W. Park, V. D. Dasika, H. P. Nair, A. M. Crook, S. R. Bank, and E. T. Yu, "Conductivity and structure of ErAs nanoparticles embedded in GaAs pn junctions analyzed via conductive atomic force microscopy," APL, vol. 100, no. 23, pp. 233117, Jun 2012. Digital object identifier
  10. K. W. Park, H. P. Nair, A. M. Crook, S. R. Bank, and E. T. Yu, "Scanning capacitance microscopy of ErAs nanoparticles embedded in GaAs pn junctions," APL, vol. 99, pp. 133114, Sep 2011. Digital object identifier
  11. A. M. Mintairov, K. Sun, J. L. Merz, H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, G. Peake, A. Egorov, V. Ustinov, R. Kudrawiec, and J. Misiewicz, "Atomic arrangement and emission properties of GaAs(In, Sb)N quantum wells," Semic. Sci. Technol., vol. 24, no. 7, pp. 075013, Jul 2009. Digital object identifier
  12. R. Kudrawiec, P. Poloczek, J. Misiewicz, H. P. Bae, T. Sarmiento, S. R. Bank, H. B. Yuen, M. A. Wistey, and J. S. Harris, "Contactless electroreflectance of GaInNAsSb/GaNAs/GaAs quantum wells emitting at 1. 5\—1. 65 \µm: Broadening of the fundamental transition," APL, vol. 94, no. 3, pp. 031903, Jan 2009. Digital object identifier
  13. R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, and J. Misiewicz, "On the Fermi level pinning in as-grown GaInNAs(Sb)/GaAs quantum wells with indium content of 8%\—32%," J. Appl. Phys., vol. 104, no. 3, pp. 033526, Aug 2008. Digital object identifier
  14. R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, and J. Misiewicz, "Contactless electroreflectance approach to study the Fermi level position in GaInNAs/GaAs quantum wells," J. Appl. Phys., vol. 102, no. 11, pp. 113501, Dec 2007. Digital object identifier
  15. S. R. Bank, H. P. Bae, L. L. Goddard, H. B. Yuen, M. A. Wistey, R. Kudrawiec, and J. S. Harris, "Recent Progress on 1. 55-\µm Dilute-Nitride Lasers," IEEE J. Quantum Electron., vol. 43, no. 9, pp. 773-785, Sep 2007. Digital object identifier
  16. J. S. Harris, R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, D. B. Jackrel, E. R. Pickett, T. Sarmiento, L. L. Goddard, V. Lordi, and T. Gugov, "Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications," Physica Status Solidi (b), vol. 244, no. 8, pp. 2707-2729, Jul 2007. Digital object identifier
  17. R. Kudrawiec, S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, L. L. Goddard, J. S. Harris, M. Gladysiewicz, M. Motyka, and J. Misiewicz, "Conduction band offset for Ga0. 62In0. 38NxAs0. 991 - xSb0. 009/GaNyAs1 - y/GaAs systems with the ground state transition at 1. 5-1. 65 \µm," APL, vol. 90, no. 13, pp. 131905, Mar 2007. Digital object identifier
  18. R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, and J. Misiewicz, "Fermi level shift in GaInNAsSb/GaAs quantum wells upon annealing studied by contactless electroreflectance," APL, vol. 90, no. 6, pp. 061902, Feb 2007. Digital object identifier
  19. R. Kudrawiec, H. B. Yuen, M. Motyka, M. Gladysiewicz, J. Misiewicz, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "Contactless electroreflectance of GaInNAsSb∕GaAs single quantum wells with indium content of 8%–32%," J. of Appl. Phys., vol. 101, no. 1, pp. 013504, Jan 2007. Digital object identifier
  20. R. Kudrawiec, M. Gladysiewicz, J. Misiewicz, H. B. Yuen, S. R. Bank, M. A. Wistey, H. P. Bae, and J. S. Harris, "Interband transitions in GaN0. 02As0. 98-xSbx/GaAs (0<x<0. 11) single quantum wells studied by contactless electroreflectance spectroscopy," Phys. Rev. B, vol. 73, pp. 245413, Jun 2006. Digital object identifier
  21. R. Kudrawiec, M. Motyka, M. Gladysiewicz, J. Misiewicz, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "Band gap discontinuity in Ga0. 9In0. 1N0. 027As0. 973 - xSbx/GaAs single quantum wells with 0 ≤ x < 0. 06 studied by contactless electroreflectance spectroscopy," APL, vol. 88, no. 22, pp. 221113, May 2006. Digital object identifier
  22. R. Kudrawiec, K. Ryczko, J. Misiewicz, H. B. Yuen, S. R. Bank, M. A. Wistey, H. P. Bae, and J. S. Harris, "Band-gap discontinuity in GaN0. 02As0. 87Sb0. 11/GaAs single-quantum wells investigated by photoreflectance spectroscopy," APL, vol. 86, no. 14, pp. 141908, Mar 2005. Digital object identifier
  23. R. Kudrawiec, H. B. Yuen, K. Ryczko, J. Misiewicz, S. R. Bank, M. A. Wistey, H. P. Bae, and J. S. Harris, "Photoreflectance and photoluminescence investigations of a step-like GaInNAsSb/GaAsN/GaAs quantum well tailored at 1. 5 \µm: The energy level structure and the Stokes shift," J. Appl. Phys., vol. 97, no. 5, pp. 053515, Feb 2005. Digital object identifier
  24. R. Kudrawiec, P. Sitarek, J. Misiewicz, S. R. Bank, H. B. Yuen, M. A. Wistey, and J. S. Harris, "Interference effects in electromodulation spectroscopy applied to GaAs-based structures: A comparison of photoreflectance and contactless electroreflectance," APL, vol. 86, no. 9, pp. 091115, Feb 2005. Digital object identifier
  25. H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, M. Seong, S. Yoon, R. Kudrawiec, and J. Misiewicz, "Improved optical quality of GaNAsSb in the dilute Sb limit," J. Appl. Phys., vol. 97, no. 11, pp. 113510, Dec 2005. Digital object identifier

Conference Paper

  1. Q. Meng, R. H. El-Jaroudi, R. C. White, H. S. Maczko, T. Dey, R. Kudrawiec, S. R. Bank, and M. A. Wistey, "Bandgap Evolution in B-III-V Alloys," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  2. Q. Meng, R. C. White, R. H. El-Jaroudi, T. Dey, L. Gelczuk, R. Kudrawiec, S. R. Bank, and M. A. Wistey, "Improvement in Optical Quality Upon Annealing in B-III-V Alloys," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  3. R. H. El-Jaroudi, K. M. McNicholas, B. A. Bouslog, J. Kopaczek, R. Kudrawiec, and S. R. Bank, "BGaInAs/GaAs quantum wells for 1. 3µm lasers," 61st Electronic Materials Conf. (EMC), Ann Arbor, MI, Jun 2019.
  4. H. S. Maczko, J. Kopaczek, S. J. Maddox, A. K. Rockwell, S. D. March, M. Gladysiewicz, S. R. Bank, and R. Kudrawiec, "An AlInAsSb/GaSb Superlattice Analysis–The Digital Alloy Iduced Conduction Band States," International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Hong Kong, China, Nov 2018. Digital object identifier
  5. K. M. McNicholas, D. J. Ironside, R. H. El-Jaroudi, H. S. Maczko, G. Cossio, L. J. Nordin, S. D. Sifferman, R. Kudrawiec, E. T. Yu, D. Wasserman, and S. R. Bank, "BGaAs/GaP heteroepitaxy for strain-free luminescent layers on Si," 60th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2018.
  6. S. D. Sifferman, M. Motyka, A. F. Briggs, K. J. Underwood, K. M. McNicholas, R. Kudrawiec, J. T. Gopinath, and S. R. Bank, "Dilute-Bismide Alloys for GaSb-based Mid-Infrared Semiconductor Lasers," Conf. on Lasers and Electro Optics (CLEO), San Jose, CA, May 2018.
  7. K. W. Park, H. P. Nair, E. M. Krivoy, S. R. Bank, and E. T. Yu, "Thermal characterization of rare earth/III-V superlattice and nanocomposite structures using scanned probe microscopy," 55th Electronic Materials Conf. (EMC), South Bend, IN, Jun 2013.
  8. V. D. Dasika, E. M. Krivoy, H. P. Nair, S. J. Maddox, K. W. Park, D. Jung, M. L. Lee, E. T. Yu, and S. R. Bank, "InAs Quantum Dot Growth using Bismuth as a Surfactant for Optoelectronic Applications," Conf. on Lasers and Electro Optics (CLEO), San Jose, CA, Jun 2013.
  9. K. W. Park, H. P. Nair, S. R. Bank, and E. T. Yu, "Proximal Probe Characterization of Thermal Conductivity in ErAs/GaAs Superlattice Grown by Molecular Beam Epitaxy," 40th Conference on the Physics & Chemistry of Surfaces & Interfaces, Waikoloa, HI, Jan 2013.
  10. K. W. Park, V. D. Dasika, H. P. Nair, A. M. Crook, S. R. Bank, and E. T. Yu, "Scanned Probe Characterization of ErAs/GaAs Nanostructures below the Resolution Limit via Statistical Analysis," International Symposium on Compound Semiconductors (ISCS), Santa Barbara, CA, Aug 2012.
  11. V. D. Dasika, E. M. Krivoy, H. P. Nair, K. W. Park, E. T. Yu, and S. R. Bank, "InAs Quantum Dot Growth using Bi as a Surfactant," 54th Electronic Materials Conf. (EMC), University Park, PA, Jun 2012.
  12. A. M. Crook, H. P. Nair, K. W. Park, E. T. Yu, and S. R. Bank, "Investigating the MBE Overgrowth of Semimetallic Nanoparticles for Nanophotonics," North American Molecular Beam Epitaxy Conf. (NAMBE), Breckenridge, CO, Sep 2010.
  13. H. P. Nair, A. M. Crook, K. W. Park, D. A. Ferrer, S. K. Banerjee, E. T. Yu, and S. R. Bank, "Investigation of MBE-grown ErAs nanoparticle morphology for high-performance optical and electronic devices," North American Molecular Beam Epitaxy Conference (NAMBE), Breckenridge, CO, Sep 2010.
  14. A. M. Crook, H. P. Nair, K. W. Park, E. T. Yu, and S. R. Bank, "Overgrowth Investigation of Epitaxial Semimetallic Nanoparticles for Photonic Devices," 52nd Electronic Materials Conf. (EMC), Notre Dame, IN, Jun 2010.
  15. K. W. Park, A. M. Crook, H. P. Nair, S. R. Bank, and E. T. Yu, "Scanned Probe Characterization of Self-Assembled ErAs/GaAs Semimetal/Semiconductor Nanostructures Grown by Molecular Beam Epitaxy," 52nd Electronic Materials Conf. (EMC), Notre Dame, IN, Jun 2010.
  16. A. M. Mintairov, K. Sun, J. L. Merz, H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, G. Peake, A. Egorov, V. Ustinov, R. Kudrawiec, and J. Misiewicz, "Atomic arrangement and emission properties of GaAs(In,Sb)N dilute nitride quantum wells," 13th Advanced Hereostructures and Nanostructures Workshop (AHNW), Jun 2008.
  17. S. R. Bank, H. P. Bae, H. B. Yuen, M. A. Wistey, L. L. Goddard, J. S. Harris, R. Kudrawiec, M. Gladysiewicz, M. Motyka, and J. Misiewicz, "Low-Threshold Continuous-Wave 1. 55-\µm GaInNAsSb lasers," Conf. on Lasers and Electro Optics (CLEO), Long Beach, CA, May 2006.
  18. H. B. Yuen, M. Seong, S. Yoon, R. Kudrawiec, S. R. Bank, M. A. Wistey, J. Misiewicz, A. Mascarenhas, and J. S. Harris, "Improved Optical Quality from Indium-Free GaNAsSb in the Dilute Sb (<3%) Limit," Materials Research Symposium (MRS), Boston, MA, Dec 2004.