Publications

Displaying 111 publications
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Journal Article

  1. R. H. El-Jaroudi, K. M. McNicholas, H. S. Maczko, R. Kudrawiec, and S. R. Bank, "Growth advancement of GaAs-based BGaInAs alloys emitting at 1. 3 um by molecular beam epitaxy," Journal of Crystal Growth and Design, May 2022. Digital object identifier
  2. H. S. Maczko, R. H. El-Jaroudi, J. Kopaczek, S. R. Bank, and R. Kudrawiec, "Photoreflectance studies of the band gap alignments in boron diluted BGaInAs/GaAs quantum wells," Optical Materials Express, vol. 12, no. 8, pp. 3118-3131, Dec 2022. Digital object identifier
  3. J. Kopaczek, F. Dybala, S. J. Zelewski, N. Sokolowski, W. Zuraw, K. M. McNicholas, R. H. El-Jaroudi, R. C. White, S. R. Bank, and R. Kudrawiec, "Photoreflectance studies of temperature and hydrostatic pressure dependencies of direct optical transitions in BGaAs alloys grown on GaP," Journal of Physics D: Applied Physics, vol. 55, no. 1, pp. 015107, Oct 2021. Digital object identifier
  4. (Invited) S. D. March, A. H. Jones, A. J. Muhowski, S. J. Maddox, M. Ren, and S. R. Bank, "Digital Alloy Staircase Avalanche Photodetectors with Tunneling-enhanced Gain," IEEE Journal of Select Topics in Quantum Electronics, vol. 28, no. 2, pp. 1-13, Mar 2021. Digital object identifier
  5. A. J. Muhowski, S. D. March, S. J. Maddox, D. Wasserman, and S. R. Bank, "Minority carrier lifetimes in digitally-grown, narrow-gap AlInAsSb alloys," Applied Physics Letters, vol. 119, no. 25, pp. 251102, Dec 2021. Digital object identifier
  6. D. Wei, S. J. Maddox, P. Sohr, S. R. Bank, and S. Law, "Enlarged growth window for plasmonic silicon-doped InAs using a bismuth surfactant," Optical Materials Express, vol. 10, no. 2, pp. 302-311, Feb 2020. Digital object identifier
  7. R. Kudrawiec, M. Polak, K. M. McNicholas, J. Kopaczek, M. A. Wistey, and S. R. Bank, "Bowing of the band gap and spin-orbit splitting energy in BGaAs," Materials Research Express, vol. 6, no. 12, pp. 125913, Jan 2020. Digital object identifier
  8. J. Zheng, Y. Yuan, Y. Tan, Y. Peng, A. K. Rockwell, S. R. Bank, A. W. Ghosh, and J. C. Campbell, "Simulations for InAlAs digital alloy avalanche photodiodes," Applied Physics Letters, vol. 115, no. 17, pp. 171106, Oct 2019. Digital object identifier
  9. Y. Yuan, A. K. Rockwell, Y. Peng, J. Zheng, S. D. March, A. H. Jones, S. R. Bank, and J. C. Campbell, "Comparison of Different Period Digital Alloy Al0. 7InAsSb Avalanche Photodiodes," Journal of Lightwave Technology, vol. 37, no. 14, pp. 3647-3654, May 2019. Digital object identifier
  10. J. Park, J. Kang, X. Liu, S. J. Maddox, K. Tang, P. C. McIntrye, S. R. Bank, and M. L. Brongersma, "Dynamic thermal emission control with InAs-based plasmonic metasurfaces," Science Advances, vol. 4, no. 12, Dec 2018. Digital object identifier
  11. J. Zheng, Y. Yuan, Y. Tan, Y. Peng, A. K. Rockwell, S. R. Bank, A. W. Ghosh, and J. C. Campbell, "Digital Alloy InAlAs Avalanche Photodiodes," Journal of Lightwave Technology, vol. 36, no. 17, pp. 3580-3585, Sep 2018. Digital object identifier
  12. Y. Yuan, J. Zheng, Y. Tan, Y. Peng, A. K. Rockwell, S. R. Bank, A. W. Ghosh, and J. C. Campbell, "Temperature dependence of the ionization coefficients of InAlAs and AlGaAs digital alloys," Photon. Res., vol. 6, no. 8, pp. 794-799, Aug 2018. Digital object identifier
  13. (Invited) S. R. Bank, J. C. Campbell, S. J. Maddox, M. Ren, A. K. Rockwell, M. E. Woodson, and S. D. March, "Avalanche Photodiodes Based on the AlInAsSb Materials System," IEEE J. Sel. Top. Quantum Electron., vol. 24, Aug 2018. Digital object identifier
  14. (Invited) S. R. Bank, J. C. Campbell, S. J. Maddox, M. Ren, A. K. Rockwell, M. E. Woodson, and S. D. March, "Avalanche Photodiodes Based on the AlInAsSb Materials System," IEEE Journal of Selected Topics in Quantum Electronics, vol. 24, pp. 1-7, Mar 2018. Digital object identifier
  15. A. K. Rockwell, M. Ren, M. E. Woodson, A. H. Jones, S. D. March, Y. Tan, Y. Yuan, Y. Sun, R. Hool, S. J. Maddox, M. L. Lee, A. W. Ghosh, J. C. Campbell, and S. R. Bank, "Toward Deterministic Construction of Low Noise Avalanche Photodetector Materials," Applied Physics Letters, vol. 113, no. 10, pp. 102106, Dec 2018. Digital object identifier
  16. A. H. Jones, Y. Yuan, M. Ren, S. J. Maddox, S. R. Bank, and J. C. Campbell, "AlxIn1-xAsySb1-y photodiodes with low avalanche breakdown temperature dependence," Optics Express, vol. 25, no. 20, pp. 24340–24345, Oct 2017. Digital object identifier
  17. M. Ren, S. J. Maddox, M. E. Woodson, J. Chen, S. R. Bank, and J. C. Campbell, "Characteristics of AlxIn1-xAsySb1-y (x:0. 3~0. 7) Avalanche Photodiodes," IEEE/OSA Journal of Lightwave Technology, vol. 35, pp. 2380, Jun 2017. Digital object identifier
  18. S. J. Maddox, S. D. March, and S. R. Bank, "Broadly Tunable AlInAsSb Digital Alloys Grown on GaSb," ACS Crystal Growth \& Design, vol. 16, no. 7, pp. 3582-3586, Jun 2016. Digital object identifier
  19. H. R. Seren, J. Zhang, G. R. Keiser, S. J. Maddox, X. Zhao, K. Fan, S. R. Bank, X. Zhang, and R. D. Averitt, "Nonlinear terahertz devices utilizing semiconducting plasmonic metamaterials," Light: Science & Applications, vol. 5, no. 5, pp. e16078, May 2016. Digital object identifier
  20. M. Ren, S. J. Maddox, M. E. Woodson, Y. Chen, S. R. Bank, and J. C. Campbell, "AlInAsSb separate absorption, charge, and multiplication avalanche photodiodes," Applied Physics Letters, vol. 108, no. 19, pp. 191108, May 2016. Digital object identifier
  21. C. S. Schulze, X. Huang, C. Prohl, V. Fullert, S. Rybank, S. J. Maddox, S. D. March, S. R. Bank, M. L. Lee, and A. Lenz, "Atomic structure and stoichiometry of In(Ga)As/GaAs quantum dots grown on an exact-oriented GaP/Si(001) substrate," APL, vol. 108, no. 14, pp. 143101, Apr 2016. Digital object identifier
  22. (Invited) S. J. Maddox, M. Ren, M. E. Woodson, S. R. Bank, and J. C. Campbell, "Recent progress in avalanche photodiodes for sensing in the IR spectrum," Proc. SPIE, vol. 9854, pp. 985405-985405, Apr 2016. Digital object identifier
  23. M. Ren, S. J. Maddox, Y. Chen, M. E. Woodson, J. C. Campbell, and S. R. Bank, "AlInAsSb/GaSb staircase avalanche photodiode," APL, vol. 108, no. 8, pp. 081101, Feb 2016. Digital object identifier
  24. M. E. Woodson, M. Ren, S. J. Maddox, Y. Chen, S. R. Bank, and J. C. Campbell, "Low-noise AlInAsSb avalanche photodiode," APL, vol. 108, no. 8, pp. 081102, Feb 2016. Digital object identifier
  25. (Invited) S. D. Sifferman, H. P. Nair, R. Salas, N. T. Sheehan, S. J. Maddox, A. M. Crook, and S. R. Bank, "Highly strained mid-infrared type-I diode lasers on GaSb," IEEE J. Sel. Top. Quantum Electron., vol. 21, no. 6, pp. 248-257, Nov 2015. Digital object identifier
  26. V. D. Dasika, E. M. Krivoy, H. P. Nair, S. J. Maddox, K. W. Park, D. Jung, M. L. Lee, E. T. Yu, and S. R. Bank, "Increased InAs Quantum Dot Size and Density using Bismuth as a Surfactant," APL, vol. 105, no. 25, pp. 253104, Dec 2014. Digital object identifier
  27. M. Wagner, A. S. McLeod, S. J. Maddox, Z. Fei, M. Liu, R. D. Averitt, M. M. Fogler, S. R. Bank, F. Keilmann, and D. N. Basov, "Ultrafast Dynamics of Surface Plasmons in InAs by Time-Resolved Infrared Nanospectroscopy," Nano Lett., vol. 14, no. 8, pp. 4529, Aug 2014. Digital object identifier
  28. W. Sun, Z. Lu, X. Zheng, J. C. Campbell, S. J. Maddox, H. P. Nair, and S. R. Bank, "High-Gain InAs Avalanche Photodiodes," IEEE J. of Quantum Electron., vol. 49, no. 2, pp. 154, Feb 2013. Digital object identifier
  29. R. Kudrawiec, H. P. Nair, M. Latkowska, K. Misiewics, S. R. Bank, and W. Walukiewics, "Contactless electroreflectance study of Fermi level pinning on GaSb surface in n-type and p-type GaSb Van Hoof structures," J. Appl. Phys., vol. 112, pp. 123513, Dec 2012. Digital object identifier
  30. E. M. Krivoy, S. Rahimi, H. P. Nair, R. Salas, S. J. Maddox, D. J. Ironside, Y. Jiang, G. Kelp, G. Shvets, D. Akinwande, and S. R. Bank, "Growth and characterization of single crystal rocksalt LaAs using LuAs barrier layers," APL, vol. 101, no. 22, pp. 221908, Nov 2012. Digital object identifier
  31. S. J. Maddox, W. Sun, Z. Lu, H. P. Nair, J. C. Campbell, and S. R. Bank, "Enhanced Low-Noise Gain from InAs Avalanche Photodiodes with Reduced Dark Current and Background Doping," APL, vol. 101, no. 15, pp. 151124, Oct 2012. Digital object identifier
  32. E. M. Krivoy, H. P. Nair, A. M. Crook, S. Rahimi, S. J. Maddox, R. Salas, D. A. Ferrer, V. D. Dasika, D. Akinwande, and S. R. Bank, "Growth and characterization of LuAs films and nanostructures," APL, vol. 101, no. 14, pp. 141910, Oct 2012. Digital object identifier
  33. A. M. Mintairov, K. Sun, J. L. Merz, H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, G. Peake, A. Egorov, V. Ustinov, R. Kudrawiec, and J. Misiewicz, "Atomic arrangement and emission properties of GaAs(In, Sb)N quantum wells," Semic. Sci. Technol., vol. 24, no. 7, pp. 075013, Jul 2009. Digital object identifier
  34. R. Kudrawiec, P. Poloczek, J. Misiewicz, H. P. Bae, T. Sarmiento, S. R. Bank, H. B. Yuen, M. A. Wistey, and J. S. Harris, "Contactless electroreflectance of GaInNAsSb/GaNAs/GaAs quantum wells emitting at 1. 5\—1. 65 \µm: Broadening of the fundamental transition," APL, vol. 94, no. 3, pp. 031903, Jan 2009. Digital object identifier
  35. R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, and J. Misiewicz, "On the Fermi level pinning in as-grown GaInNAs(Sb)/GaAs quantum wells with indium content of 8%\—32%," J. Appl. Phys., vol. 104, no. 3, pp. 033526, Aug 2008. Digital object identifier
  36. R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, and J. Misiewicz, "Contactless electroreflectance approach to study the Fermi level position in GaInNAs/GaAs quantum wells," J. Appl. Phys., vol. 102, no. 11, pp. 113501, Dec 2007. Digital object identifier
  37. S. R. Bank, H. P. Bae, L. L. Goddard, H. B. Yuen, M. A. Wistey, R. Kudrawiec, and J. S. Harris, "Recent Progress on 1. 55-\µm Dilute-Nitride Lasers," IEEE J. Quantum Electron., vol. 43, no. 9, pp. 773-785, Sep 2007. Digital object identifier
  38. J. S. Harris, R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, D. B. Jackrel, E. R. Pickett, T. Sarmiento, L. L. Goddard, V. Lordi, and T. Gugov, "Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications," Physica Status Solidi (b), vol. 244, no. 8, pp. 2707-2729, Jul 2007. Digital object identifier
  39. R. Kudrawiec, S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, L. L. Goddard, J. S. Harris, M. Gladysiewicz, M. Motyka, and J. Misiewicz, "Conduction band offset for Ga0. 62In0. 38NxAs0. 991 - xSb0. 009/GaNyAs1 - y/GaAs systems with the ground state transition at 1. 5-1. 65 \µm," APL, vol. 90, no. 13, pp. 131905, Mar 2007. Digital object identifier
  40. R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, and J. Misiewicz, "Fermi level shift in GaInNAsSb/GaAs quantum wells upon annealing studied by contactless electroreflectance," APL, vol. 90, no. 6, pp. 061902, Feb 2007. Digital object identifier
  41. R. Kudrawiec, H. B. Yuen, M. Motyka, M. Gladysiewicz, J. Misiewicz, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "Contactless electroreflectance of GaInNAsSb∕GaAs single quantum wells with indium content of 8%–32%," J. of Appl. Phys., vol. 101, no. 1, pp. 013504, Jan 2007. Digital object identifier
  42. R. Kudrawiec, M. Gladysiewicz, J. Misiewicz, H. B. Yuen, S. R. Bank, M. A. Wistey, H. P. Bae, and J. S. Harris, "Interband transitions in GaN0. 02As0. 98-xSbx/GaAs (0<x<0. 11) single quantum wells studied by contactless electroreflectance spectroscopy," Phys. Rev. B, vol. 73, pp. 245413, Jun 2006. Digital object identifier
  43. R. Kudrawiec, M. Motyka, M. Gladysiewicz, J. Misiewicz, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "Band gap discontinuity in Ga0. 9In0. 1N0. 027As0. 973 - xSbx/GaAs single quantum wells with 0 ≤ x < 0. 06 studied by contactless electroreflectance spectroscopy," APL, vol. 88, no. 22, pp. 221113, May 2006. Digital object identifier
  44. R. Kudrawiec, K. Ryczko, J. Misiewicz, H. B. Yuen, S. R. Bank, M. A. Wistey, H. P. Bae, and J. S. Harris, "Band-gap discontinuity in GaN0. 02As0. 87Sb0. 11/GaAs single-quantum wells investigated by photoreflectance spectroscopy," APL, vol. 86, no. 14, pp. 141908, Mar 2005. Digital object identifier
  45. R. Kudrawiec, H. B. Yuen, K. Ryczko, J. Misiewicz, S. R. Bank, M. A. Wistey, H. P. Bae, and J. S. Harris, "Photoreflectance and photoluminescence investigations of a step-like GaInNAsSb/GaAsN/GaAs quantum well tailored at 1. 5 \µm: The energy level structure and the Stokes shift," J. Appl. Phys., vol. 97, no. 5, pp. 053515, Feb 2005. Digital object identifier
  46. R. Kudrawiec, P. Sitarek, J. Misiewicz, S. R. Bank, H. B. Yuen, M. A. Wistey, and J. S. Harris, "Interference effects in electromodulation spectroscopy applied to GaAs-based structures: A comparison of photoreflectance and contactless electroreflectance," APL, vol. 86, no. 9, pp. 091115, Feb 2005. Digital object identifier
  47. H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, M. Seong, S. Yoon, R. Kudrawiec, and J. Misiewicz, "Improved optical quality of GaNAsSb in the dilute Sb limit," J. Appl. Phys., vol. 97, no. 11, pp. 113510, Dec 2005. Digital object identifier

Conference Paper

  1. Q. Meng, R. H. El-Jaroudi, R. C. White, H. S. Maczko, T. Dey, R. Kudrawiec, S. R. Bank, and M. A. Wistey, "Bandgap Evolution in B-III-V Alloys," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  2. Q. Meng, R. C. White, R. H. El-Jaroudi, T. Dey, L. Gelczuk, R. Kudrawiec, S. R. Bank, and M. A. Wistey, "Improvement in Optical Quality Upon Annealing in B-III-V Alloys," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  3. J. Zhang, X. Zhao, R. Ul. Haque, F. Deng, C. Chen, Y. Zhang, S. D. March, S. J. Maddox, S. R. Bank, X. Zhang, and R. D. Averitt, "Ultrafast broadband tuninng of InAs THz plasmonic arrays," Frontiers in Optics + Laser Science 2021, Washington, DC United States, Nov 2021.