Publications

Displaying 19 publications
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Conference Paper

  1. Q. Meng, R. H. El-Jaroudi, R. C. White, H. S. Maczko, T. Dey, R. Kudrawiec, S. R. Bank, and M. A. Wistey, "Bandgap Evolution in B-III-V Alloys," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  2. Q. Meng, R. C. White, R. H. El-Jaroudi, T. Dey, L. Gelczuk, R. Kudrawiec, S. R. Bank, and M. A. Wistey, "Improvement in Optical Quality Upon Annealing in B-III-V Alloys," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  3. R. H. El-Jaroudi, K. M. McNicholas, B. A. Bouslog, J. Kopaczek, R. Kudrawiec, and S. R. Bank, "BGaInAs/GaAs quantum wells for 1. 3µm lasers," 61st Electronic Materials Conf. (EMC), Ann Arbor, MI, Jun 2019.
  4. H. S. Maczko, J. Kopaczek, S. J. Maddox, A. K. Rockwell, S. D. March, M. Gladysiewicz, S. R. Bank, and R. Kudrawiec, "An AlInAsSb/GaSb Superlattice Analysis–The Digital Alloy Iduced Conduction Band States," International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Hong Kong, China, Nov 2018. Digital object identifier
  5. K. M. McNicholas, D. J. Ironside, R. H. El-Jaroudi, H. S. Maczko, G. Cossio, L. J. Nordin, S. D. Sifferman, R. Kudrawiec, E. T. Yu, D. Wasserman, and S. R. Bank, "BGaAs/GaP heteroepitaxy for strain-free luminescent layers on Si," 60th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2018.
  6. S. D. Sifferman, M. Motyka, A. F. Briggs, K. J. Underwood, K. M. McNicholas, R. Kudrawiec, J. T. Gopinath, and S. R. Bank, "Dilute-Bismide Alloys for GaSb-based Mid-Infrared Semiconductor Lasers," Conf. on Lasers and Electro Optics (CLEO), San Jose, CA, May 2018.
  7. (Invited) S. R. Bank, A. K. Rockwell, S. J. Maddox, W. Sun, and J. C. Campbell, "Digital Alloy Growth of AlInAsSb for Low Noise Avalanche Photodetectors," 18th International Conference on Crystal Growth and Epitaxy (ICCGE-18), Nagoya, Japan, Aug 2016.
  8. A. K. Rockwell, S. J. Maddox, D. Jung, Y. Sun, S. D. Sifferman, W. Sun, M. Ren, J. Guo, J. C. Campbell, M. L. Lee, and S. R. Bank, "The Effect of Period Thickness on AlInAsSb Digital Alloys on GaSb," 58th Electronic Materials Conf. (EMC), Newark, DE, Jun 2016.
  9. (Invited) S. R. Bank, S. J. Maddox, S. D. March, W. Sun, M. Ren, and J. C. Campbell, "Advances in IR APD materials research," SPIE Defense and Commercial Sensing, Baltimore, MD, Apr 2016.
  10. (Invited) S. R. Bank, S. J. Maddox, W. Sun, H. P. Nair, and J. C. Campbell, "Recent progress in high gain InAs avalanche photodiodes (Presentation Recording)," Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications (SPIE), San Diego, CA, vol. 9555, pp. 955509, Aug 2015. Digital object identifier
  11. (Invited) S. R. Bank, S. J. Maddox, W. Sun, H. P. Nair, and J. C. Campbell, "Recent progress in high gain InAs avalanche photodiodes," SPIE Optics and Photonics Meeting (SPIE_OPM), San Diego, CA, Aug 2015.
  12. S. J. Maddox, S. D. March, W. Sun, J. C. Campbell, and S. R. Bank, "Growth and Properties of Broadly Tunable AlInAsSb Digital Alloys on GaSb," 57th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2015.
  13. W. Sun, S. J. Maddox, S. R. Bank, and J. C. Campbell, "Room Temperature High-Gain InAs/AlAsSb Avalanche Photodiode," IEEE Photonics Conf. (IPC), San Diego, CA, Oct 2014.
  14. W. Sun, S. J. Maddox, S. R. Bank, and J. C. Campbell, "Record High Gain from InAs Avalanche Photodiodes at Room Temperature," 72nd Device Research Conf. (DRC), Santa Barbara, Ca, Jun 2014.
  15. W. Sun, S. J. Maddox, Z. Lu, H. P. Nair, X. Zheng, S. R. Bank, and J. C. Campbell, "Charge-Compensated High Gain InAs Avalanche Photodiodes," IEEE Photonics Conf. (IPC), Burlingame, CA, Sep 2012.
  16. S. J. Maddox, W. Sun, Z. Lu, H. P. Nair, J. C. Campbell, and S. R. Bank, "InAs Avalanche Photodiode with Improved Electric Field Uniformity," 70th Device Research Conf. (DRC), State College, PA, Jun 2012.
  17. A. M. Mintairov, K. Sun, J. L. Merz, H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, G. Peake, A. Egorov, V. Ustinov, R. Kudrawiec, and J. Misiewicz, "Atomic arrangement and emission properties of GaAs(In,Sb)N dilute nitride quantum wells," 13th Advanced Hereostructures and Nanostructures Workshop (AHNW), Jun 2008.
  18. S. R. Bank, H. P. Bae, H. B. Yuen, M. A. Wistey, L. L. Goddard, J. S. Harris, R. Kudrawiec, M. Gladysiewicz, M. Motyka, and J. Misiewicz, "Low-Threshold Continuous-Wave 1. 55-\µm GaInNAsSb lasers," Conf. on Lasers and Electro Optics (CLEO), Long Beach, CA, May 2006.
  19. H. B. Yuen, M. Seong, S. Yoon, R. Kudrawiec, S. R. Bank, M. A. Wistey, J. Misiewicz, A. Mascarenhas, and J. S. Harris, "Improved Optical Quality from Indium-Free GaNAsSb in the Dilute Sb (<3%) Limit," Materials Research Symposium (MRS), Boston, MA, Dec 2004.