Publications

Displaying 6 publications
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Journal Article

  1. R. H. El-Jaroudi, K. M. McNicholas, H. S. Maczko, R. Kudrawiec, and S. R. Bank, "Growth advancement of GaAs-based BGaInAs alloys emitting at 1. 3 um by molecular beam epitaxy," Journal of Crystal Growth and Design, May 2022. Digital object identifier
  2. R. Kudrawiec, H. P. Nair, M. Latkowska, K. Misiewics, S. R. Bank, and W. Walukiewics, "Contactless electroreflectance study of Fermi level pinning on GaSb surface in n-type and p-type GaSb Van Hoof structures," J. Appl. Phys., vol. 112, pp. 123513, Dec 2012. Digital object identifier
  3. R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, and J. Misiewicz, "On the Fermi level pinning in as-grown GaInNAs(Sb)/GaAs quantum wells with indium content of 8%\—32%," J. Appl. Phys., vol. 104, no. 3, pp. 033526, Aug 2008. Digital object identifier
  4. R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, and J. Misiewicz, "Contactless electroreflectance approach to study the Fermi level position in GaInNAs/GaAs quantum wells," J. Appl. Phys., vol. 102, no. 11, pp. 113501, Dec 2007. Digital object identifier
  5. R. Kudrawiec, H. B. Yuen, K. Ryczko, J. Misiewicz, S. R. Bank, M. A. Wistey, H. P. Bae, and J. S. Harris, "Photoreflectance and photoluminescence investigations of a step-like GaInNAsSb/GaAsN/GaAs quantum well tailored at 1. 5 \µm: The energy level structure and the Stokes shift," J. Appl. Phys., vol. 97, no. 5, pp. 053515, Feb 2005. Digital object identifier
  6. H. B. Yuen, S. R. Bank, M. A. Wistey, J. S. Harris, M. Seong, S. Yoon, R. Kudrawiec, and J. Misiewicz, "Improved optical quality of GaNAsSb in the dilute Sb limit," J. Appl. Phys., vol. 97, no. 11, pp. 113510, Dec 2005. Digital object identifier