Publications

Displaying 7 publications
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Journal Article

  1. H. P. Nair, A. M. Crook, K. M. Yu, and S. R. Bank, "Structural and optical studies of nitrogen incorporation into GaSb-based GaInSb quantum wells," APL, vol. 100, no. 2, pp. 021103, Jan 2012. Digital object identifier
  2. M. M. Oye, T. J. Mattord, G. A. Hallock, S. R. Bank, M. A. Wistey, J. M. Reifsnider, A. J. Ptak, H. B. Yuen, J. S. Harris, and A. L. Holmes Jr., "Effects of different plasma species (atomic N, metastable N2*, and ions) on the optical properties of dilute nitride materials grown by plasma-assisted molecular-beam epitaxy," APL, vol. 91, no. 19, pp. 191903, Sep 2007. Digital object identifier
  3. M. M. Oye, M. A. Wistey, J. M. Reifsnider, S. Agarwal, T. J. Mattord, S. Govindaraju, G. A. Hallock, A. L. Holmes Jr., S. R. Bank, H. B. Yuen, and J. S. Harris, "Ion damage effects from negative deflector plate voltages during the plasma-assisted molecular-beam epitaxy growth of dilute nitrides," APL, vol. 86, no. 22, pp. 221902, May 2005. Digital object identifier

Conference Paper

  1. S. J. Maddox, K. M. Yu, A. J. Ptak, H. P. Nair, V. D. Dasika, and S. R. Bank, "Optical and Structural Characterization of InAsBi and InGaAsBi Grown by Molecular Beam Epitaxy," 55th Electronic Materials Conf. (EMC), South Bend, IN, Jun 2013.
  2. H. P. Nair, A. M. Crook, K. M. Yu, and S. R. Bank, "Thermal Annealing Induced Optical Quality Enhancement in GaSb-Based Dilute-Nitrides," 54th Electronic Materials Conf. (EMC), University Park, PA, Jun 2012.
  3. H. P. Nair, A. M. Crook, K. M. Yu, and S. R. Bank, "Dilute-Nitride Active Regions on GaSb for Mid-Infrared Semiconductor Diode Lasers," Conf. on Lasers and Electro Optics (CLEO), San Jose, CA, May 2012.
  4. H. P. Nair, A. M. Crook, K. M. Yu, and S. R. Bank, "Room Temperature Photoluminescence from a GaSb-Based Dilute-Nitride QW," North American Molecular Beam Epitaxy Conf. (NAMBE), San Diego, CA, Aug 2011.