Publications
Journal Article
- D. Chen, S. D. March, A. H. Jones, Y. Shen, A. A. Dadey, K. Sun, J. A. McArthur, A. M. Skipper, X. Xue, B. Guo, J. Bai, S. R. Bank, and J. C. Campbell, "Photon-trapping-enhanced avalanche photodiodes for mid-infrared applications," Nature Photonics, May 2023.
- D. Chen, K. Sun, Y. Chen, A. H. Jones, A. A. Dadey, B. Guo, J. A. McArthur, S. R. Bank, and J. C. Campbell, "Frequency behavior of AlInAsSb nBn photodetectors and the development of an equivalent circuit model," Optics Express, vol. 30, no. 14, pp. 25262, Jul 2022.
- A. H. Jones, Y. Shen, K. Sun, D. Chen, S. D. March, S. R. Bank, and J. C. Campbell, "Room-temperature bandwidth of 2-\µm AlInAsSb avalanche photodiodes," Optics Express, vol. 29, no. 23, pp. 38939-38945, Nov 2021.
- R. Wang, D. Chen, J. A. McArthur, X. Xue, A. H. Jones, S. R. Bank, and J. C. Campbell, "Al0. 3InAsSb/Al0. 7InAsSb Digital Alloy nBn Photodetectors," Journal of Lightwave Technology, vol. 40, no. 1, pp. 113-120, Oct 2021.
- D. Chen, R. Wang, J. A. McArthur, X. Xue, A. H. Jones, S. R. Bank, and J. C. Campbell, "Demonstration of infrared nBn photodetectors based on the AlInAsSb digital alloy materials system," Applied Physics Letters, vol. 119, no. 3, pp. 031101, Jul 2021.
- D. Chen, J. A. McArthur, S. D. March, X. Xue, A. H. Jones, A. A. Dadey, S. R. Bank, and J. C. Campbell, "Comparison and analysis of Al0. 7InAsSb avalanche photodiodes with different background doping polarities," Applied Physics Letters, vol. 119, no. 3, pp. 032101, Jul 2021.
- R. Kudrawiec, S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, L. L. Goddard, J. S. Harris, M. Gladysiewicz, M. Motyka, and J. Misiewicz, "Conduction band offset for Ga0. 62In0. 38NxAs0. 991 - xSb0. 009/GaNyAs1 - y/GaAs systems with the ground state transition at 1. 5-1. 65 \µm," APL, vol. 90, no. 13, pp. 131905, Mar 2007.
- R. Kudrawiec, H. B. Yuen, M. Motyka, M. Gladysiewicz, J. Misiewicz, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "Contactless electroreflectance of GaInNAsSb∕GaAs single quantum wells with indium content of 8%–32%," J. of Appl. Phys., vol. 101, no. 1, pp. 013504, Jan 2007.
- R. Kudrawiec, M. Gladysiewicz, J. Misiewicz, H. B. Yuen, S. R. Bank, M. A. Wistey, H. P. Bae, and J. S. Harris, "Interband transitions in GaN0. 02As0. 98-xSbx/GaAs (0<x<0. 11) single quantum wells studied by contactless electroreflectance spectroscopy," Phys. Rev. B, vol. 73, pp. 245413, Jun 2006.
- R. Kudrawiec, M. Motyka, M. Gladysiewicz, J. Misiewicz, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "Band gap discontinuity in Ga0. 9In0. 1N0. 027As0. 973 - xSbx/GaAs single quantum wells with 0 ≤ x < 0. 06 studied by contactless electroreflectance spectroscopy," APL, vol. 88, no. 22, pp. 221113, May 2006.
Conference Paper
- R. Wang, D. Chen, J. A. McArthur, X. Xue, S. R. Bank, and J. C. Campbell, "AlxIn1-xAsySb1-y digital alloy nBn photodetectors," 2021 IEEE Photonics Conference (IPC), Vancouver, BC, Canada, Oct 2021.
- J. A. McArthur, S. D. March, D. Chen, A. A. Dadey, A. H. Jones, J. C. Campbell, and S. R. Bank, "Background Carrier Polarity Switching in AlInAsSb Digital Alloys," 63nd Electronic Materials Conf. (EMC), Virtual, Jun 2021.
- H. S. Maczko, J. Kopaczek, S. J. Maddox, A. K. Rockwell, S. D. March, M. Gladysiewicz, S. R. Bank, and R. Kudrawiec, "An AlInAsSb/GaSb Superlattice Analysis–The Digital Alloy Iduced Conduction Band States," International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Hong Kong, China, Nov 2018.
- A. M. Crook, H. P. Nair Jong Ho Lee, D. A. Ferrer, D. Akinwande, and S. R. Bank, "Nanoparticle Seeded Growth of ErAs Films Embedded in GaAs," North American Molecular Beam Epitaxy Conf. (NAMBE), San Diego, CA, Aug 2011.
- S. R. Bank, H. P. Bae, H. B. Yuen, M. A. Wistey, L. L. Goddard, J. S. Harris, R. Kudrawiec, M. Gladysiewicz, M. Motyka, and J. Misiewicz, "Low-Threshold Continuous-Wave 1. 55-\µm GaInNAsSb lasers," Conf. on Lasers and Electro Optics (CLEO), Long Beach, CA, May 2006.