Publications

Displaying 16 publications
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Journal Article

  1. K. Chen, M. N. Yogeesh, Y. Huang, S. Zhang, F. He, X. Meng, S. Fang, N. T. Sheehan, T. H. Tao, S. R. Bank, J. Lin, D. Akinwande, P. Sutter, T. Lai, and Y. Wang, "Non-destructive measurement of photoexcited carrier transport in graphene with ultrafast grating imaging technique," Carbon, vol. 107, pp. 233-239, Oct 2016. Digital object identifier
  2. Z. Wu, G. Kelp, M. N. Yogeesh, W. Li, K. M. McNicholas, A. F. Briggs, B. B.Rajeeva, D. Akinwande, S. R. Bank, G. Shvets, and Y. Zheng, "Dual-Band Moire Metasurface Patches for Multifunctional Biomedical Applications," Nanoscale, vol. 8, pp. 18461, Sep 2016. Digital object identifier
  3. Z. Wu, W. Li, M. N. Yogeesh, S. Jung, A. Lynghi. Lee, K. M. McNicholas, A. F. Briggs, S. R. Bank, M. A. Belkin, D. Akinwande, and Y. Zheng, "Tunable Graphene Metasurfaces with Gradient Features by Self-Assembly-Based Moire Nanosphere Lithography," Advanced Optical Materials, Aug 2016. Digital object identifier
  4. W. Zhu, S. Park, M. N. Yogeesh, K. M. McNicholas, S. R. Bank, and D. Akinwande, "Black phosphorus flexible thin film transistors at gigahertz frequencies," Nano Letters, vol. 16, no. 4, pp. 2301-2306, Mar 2016. Digital object identifier
  5. R. Kudrawiec, S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, L. L. Goddard, J. S. Harris, M. Gladysiewicz, M. Motyka, and J. Misiewicz, "Conduction band offset for Ga0. 62In0. 38NxAs0. 991 - xSb0. 009/GaNyAs1 - y/GaAs systems with the ground state transition at 1. 5-1. 65 \µm," APL, vol. 90, no. 13, pp. 131905, Mar 2007. Digital object identifier
  6. R. Kudrawiec, H. B. Yuen, M. Motyka, M. Gladysiewicz, J. Misiewicz, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "Contactless electroreflectance of GaInNAsSb∕GaAs single quantum wells with indium content of 8%–32%," J. of Appl. Phys., vol. 101, no. 1, pp. 013504, Jan 2007. Digital object identifier
  7. R. Kudrawiec, M. Gladysiewicz, J. Misiewicz, H. B. Yuen, S. R. Bank, M. A. Wistey, H. P. Bae, and J. S. Harris, "Interband transitions in GaN0. 02As0. 98-xSbx/GaAs (0<x<0. 11) single quantum wells studied by contactless electroreflectance spectroscopy," Phys. Rev. B, vol. 73, pp. 245413, Jun 2006. Digital object identifier
  8. R. Kudrawiec, M. Motyka, M. Gladysiewicz, J. Misiewicz, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "Band gap discontinuity in Ga0. 9In0. 1N0. 027As0. 973 - xSbx/GaAs single quantum wells with 0 ≤ x < 0. 06 studied by contactless electroreflectance spectroscopy," APL, vol. 88, no. 22, pp. 221113, May 2006. Digital object identifier
  9. G. Salis, R. Wang, X. Jiang, R. M. Shelby, S. S. P. Parkin, S. R. Bank, and J. S. Harris, "Temperature independence of the spin-injection efficiency of a MgO-based tunnel spin injector," APL, vol. 87, no. 26, pp. 262503, Dec 2005. Digital object identifier
  10. X. Jiang, R. Wang, R. M. Shelby, R. M. Macfarlane, S. R. Bank, J. S. Harris, and S. S. P. Parkin, "Highly Spin-Polarized Room-Temperature Tunnel Injector for Semiconductor Spintronics using MgO(100)," Phys. Rev. Lett., vol. 94, no. 5, pp. 056601, Feb 2005. Digital object identifier
  11. R. Wang, X. Jiang, R. M. Shelby, R. M. Macfarlane, S. S. P. Parkin, S. R. Bank, and J. S. Harris, "Increase in spin injection efficiency of a CoFe/MgO(100) tunnel spin injector with thermal annealing," APL, vol. 86, no. 5, pp. 052901, Jan 2005. Digital object identifier

Conference Paper

  1. H. S. Maczko, J. Kopaczek, S. J. Maddox, A. K. Rockwell, S. D. March, M. Gladysiewicz, S. R. Bank, and R. Kudrawiec, "An AlInAsSb/GaSb Superlattice Analysis–The Digital Alloy Iduced Conduction Band States," International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Hong Kong, China, Nov 2018. Digital object identifier
  2. E. S. Walker, W. Li, S. Guchhait, M. N. Yogeesh, F. He, Y. Wang, D. Akinwande, and S. R. Bank, "In Situ Oxidation of Bismuth Thin Films Grown by Molecular Beam Epitaxy for Device Applications," 57th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2015.
  3. E. S. Walker, E. M. Krivoy, M. N. Yogeesh, D. Akinwande, and S. R. Bank, "Semiconducting Bismuth Thin Films Grown by Molecular Beam Epitaxy for Device Applications," 56th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2014.
  4. S. R. Bank, H. P. Bae, H. B. Yuen, M. A. Wistey, L. L. Goddard, J. S. Harris, R. Kudrawiec, M. Gladysiewicz, M. Motyka, and J. Misiewicz, "Low-Threshold Continuous-Wave 1. 55-\µm GaInNAsSb lasers," Conf. on Lasers and Electro Optics (CLEO), Long Beach, CA, May 2006.
  5. R. Wang, X. Jiang, R. M. Shelby, R. M. Macfarlane, S. R. Bank, J. S. Harris, and S. S. P. Parkin, "Spin injection from ferromagnetic tunnel injectors in quantum well structures at high temperatures," American Physical Society (APS) March Meeting, Mar 2004.