Publications

Displaying 14 publications
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Journal Article

  1. T. Kim, A. M. Skipper, S. R. Bank, and E. T. Yu, "Nanoscale electrical conductance and leakage currents in etched and selective-area regrown GaAs pn junctions," Journal of Applied Physics, vol. 137, no. 7, pp. 075702, Feb 2025. Digital object identifier
  2. H. Karimi, D. J. Herrera, A. A. Dadey, D. Wei, J. A. McArthur, S. R. Bank, and J. C. Campbell, "Analysis of the effect of different scattering mechanisms on the excess noise behavior of Sb-based avalanche photodiodes," Optics Express, vol. 33, no. 4, pp. 7337-7344, Feb 2025. Digital object identifier
  3. A. M. Garcia, A. M. Skipper, D. J. Ironside, and S. R. Bank, "Experimentally calibrated modeling of periodic supply epitaxy for selective area growth by molecular beam epitaxy," Crystal Growth & Design, vol. 25, no. 4, pp. 963-969, Jan 2025. Digital object identifier
  4. M. S. Reza, T. Dey, A. W. Arbogast, Q. Meng, S. R. Bank, and M. A. Wistey, "Confinement and threshold modeling for high temperature GeSn and GeC/GeCSn lasers," IEEE J. Sel. Topics Quantum Electron., vol. 31, no. 1, pp. 1503011, Jan 2025. Digital object identifier
  5. J. A. McArthur, A. A. Dadey, K. Circir, S. D. March, X. Xue, D. Chen, A. H. Jones, A. Dolocan, J. C. Campbell, and S. R. Bank, "Source impurity contributions and polarity inverting in the unintentional doping of AlInAsSb digital alloys grown via molecular beam epitaxy," Crystal Growth & Design, vol. 25, no. 2, pp. 392-399, Dec 2024. Digital object identifier
  6. J. K. Saha, S. A. A. Taqy, P. K. Sarkar, I. Rahaman, A. W. Arbogast, T. Dey, A. Dolocan, M. R. R. Munna, K. Alam, D. Wasserman, S. R. Bank, and M. A. Wistey, "Observation of low-resistance Al and Ni p-type ohmic contacts to dilute GeC and GeCSn alloys," J. Vac. Sci. Technol. B, vol. 42, no. 6, pp. 062211, Nov 2024. Digital object identifier
  7. R. C. White, M. Bergthold, A. Muhowski, L. Nordin, I. Okoro, H. Hijazi, L. Feldman, D. Wasserman, and S. R. Bank, "Molecular beam epitaxy of InAsSbBi lattice-matched to InSb toward long-wave infrared sensing," Crystal Growth & Design, vol. 24, no. 21, pp. 8727-8735, Oct 2024. Digital object identifier
  8. K. Chen, M. N. Yogeesh, Y. Huang, S. Zhang, F. He, X. Meng, S. Fang, N. T. Sheehan, T. H. Tao, S. R. Bank, J. Lin, D. Akinwande, P. Sutter, T. Lai, and Y. Wang, "Non-destructive measurement of photoexcited carrier transport in graphene with ultrafast grating imaging technique," Carbon, vol. 107, pp. 233-239, Oct 2016. Digital object identifier
  9. R. Kudrawiec, S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, L. L. Goddard, J. S. Harris, M. Gladysiewicz, M. Motyka, and J. Misiewicz, "Conduction band offset for Ga0. 62In0. 38NxAs0. 991 - xSb0. 009/GaNyAs1 - y/GaAs systems with the ground state transition at 1. 5-1. 65 \µm," APL, vol. 90, no. 13, pp. 131905, Mar 2007. Digital object identifier
  10. R. Kudrawiec, H. B. Yuen, M. Motyka, M. Gladysiewicz, J. Misiewicz, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "Contactless electroreflectance of GaInNAsSb∕GaAs single quantum wells with indium content of 8%–32%," J. of Appl. Phys., vol. 101, no. 1, pp. 013504, Jan 2007. Digital object identifier
  11. R. Kudrawiec, M. Gladysiewicz, J. Misiewicz, H. B. Yuen, S. R. Bank, M. A. Wistey, H. P. Bae, and J. S. Harris, "Interband transitions in GaN0. 02As0. 98-xSbx/GaAs (0<x<0. 11) single quantum wells studied by contactless electroreflectance spectroscopy," Phys. Rev. B, vol. 73, pp. 245413, Jun 2006. Digital object identifier
  12. R. Kudrawiec, M. Motyka, M. Gladysiewicz, J. Misiewicz, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "Band gap discontinuity in Ga0. 9In0. 1N0. 027As0. 973 - xSbx/GaAs single quantum wells with 0 ≤ x < 0. 06 studied by contactless electroreflectance spectroscopy," APL, vol. 88, no. 22, pp. 221113, May 2006. Digital object identifier

Conference Paper

  1. H. S. Maczko, J. Kopaczek, S. J. Maddox, A. K. Rockwell, S. D. March, M. Gladysiewicz, S. R. Bank, and R. Kudrawiec, "An AlInAsSb/GaSb Superlattice Analysis–The Digital Alloy Iduced Conduction Band States," International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Hong Kong, China, Nov 2018. Digital object identifier
  2. S. R. Bank, H. P. Bae, H. B. Yuen, M. A. Wistey, L. L. Goddard, J. S. Harris, R. Kudrawiec, M. Gladysiewicz, M. Motyka, and J. Misiewicz, "Low-Threshold Continuous-Wave 1. 55-\µm GaInNAsSb lasers," Conf. on Lasers and Electro Optics (CLEO), Long Beach, CA, May 2006.