Publications

Displaying 17 publications
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Journal Article

  1. R. H. El-Jaroudi, K. M. McNicholas, H. S. Maczko, R. Kudrawiec, and S. R. Bank, "Growth advancement of GaAs-based BGaInAs alloys emitting at 1. 3 um by molecular beam epitaxy," Journal of Crystal Growth and Design, May 2022. Digital object identifier
  2. H. S. Maczko, R. H. El-Jaroudi, J. Kopaczek, S. R. Bank, and R. Kudrawiec, "Photoreflectance studies of the band gap alignments in boron diluted BGaInAs/GaAs quantum wells," Optical Materials Express, vol. 12, no. 8, pp. 3118-3131, Dec 2022. Digital object identifier
  3. J. S. Harris, R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, D. B. Jackrel, E. R. Pickett, T. Sarmiento, L. L. Goddard, V. Lordi, and T. Gugov, "Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications," Physica Status Solidi (b), vol. 244, no. 8, pp. 2707-2729, Jul 2007. Digital object identifier
  4. R. Kudrawiec, S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, L. L. Goddard, J. S. Harris, M. Gladysiewicz, M. Motyka, and J. Misiewicz, "Conduction band offset for Ga0. 62In0. 38NxAs0. 991 - xSb0. 009/GaNyAs1 - y/GaAs systems with the ground state transition at 1. 5-1. 65 \µm," APL, vol. 90, no. 13, pp. 131905, Mar 2007. Digital object identifier
  5. R. Kudrawiec, H. B. Yuen, M. Motyka, M. Gladysiewicz, J. Misiewicz, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "Contactless electroreflectance of GaInNAsSb∕GaAs single quantum wells with indium content of 8%–32%," J. of Appl. Phys., vol. 101, no. 1, pp. 013504, Jan 2007. Digital object identifier
  6. R. Kudrawiec, M. Gladysiewicz, J. Misiewicz, H. B. Yuen, S. R. Bank, M. A. Wistey, H. P. Bae, and J. S. Harris, "Interband transitions in GaN0. 02As0. 98-xSbx/GaAs (0<x<0. 11) single quantum wells studied by contactless electroreflectance spectroscopy," Phys. Rev. B, vol. 73, pp. 245413, Jun 2006. Digital object identifier
  7. R. Kudrawiec, M. Motyka, M. Gladysiewicz, J. Misiewicz, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "Band gap discontinuity in Ga0. 9In0. 1N0. 027As0. 973 - xSbx/GaAs single quantum wells with 0 ≤ x < 0. 06 studied by contactless electroreflectance spectroscopy," APL, vol. 88, no. 22, pp. 221113, May 2006. Digital object identifier
  8. M. A. Wistey, S. R. Bank, H. B. Yuen, L. L. Goddard, T. Gugov, and J. S. Harris, "Protecting wafer surface during plasma ignition using an arsenic cap," J. Vac. Sci. Technol. B, vol. 23, no. 3, pp. 1324-1327, May 2005. Digital object identifier
  9. T. Gugov, V. Gambin, M. A. Wistey, H. B. Yuen, S. R. Bank, and J. S. Harris, "Use of transmission electron microscopy in the characterization of GaInNAs(Sb) quantum well structures grown by molecular beam epitaxy," J. Vac. Sci. Technol. B, vol. 22, no. 3, pp. 1588-1592, May 2004. Digital object identifier

Conference Paper

  1. Q. Meng, R. H. El-Jaroudi, R. C. White, H. S. Maczko, T. Dey, R. Kudrawiec, S. R. Bank, and M. A. Wistey, "Bandgap Evolution in B-III-V Alloys," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  2. H. S. Maczko, J. Kopaczek, S. J. Maddox, A. K. Rockwell, S. D. March, M. Gladysiewicz, S. R. Bank, and R. Kudrawiec, "An AlInAsSb/GaSb Superlattice Analysis–The Digital Alloy Iduced Conduction Band States," International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Hong Kong, China, Nov 2018. Digital object identifier
  3. K. M. McNicholas, D. J. Ironside, R. H. El-Jaroudi, H. S. Maczko, G. Cossio, L. J. Nordin, S. D. Sifferman, R. Kudrawiec, E. T. Yu, D. Wasserman, and S. R. Bank, "BGaAs/GaP heteroepitaxy for strain-free luminescent layers on Si," 60th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2018.
  4. S. R. Bank, H. P. Bae, H. B. Yuen, M. A. Wistey, L. L. Goddard, J. S. Harris, R. Kudrawiec, M. Gladysiewicz, M. Motyka, and J. Misiewicz, "Low-Threshold Continuous-Wave 1. 55-\µm GaInNAsSb lasers," Conf. on Lasers and Electro Optics (CLEO), Long Beach, CA, May 2006.
  5. M. A. Wistey, S. R. Bank, H. B. Yuen, T. Gugov, and J. S. Harris, "Protecting Wafer Surface During GaInNAs Plasma Ignition by Use of an Arsenic Cap," North American Molecular Beam Epitaxy Conf. (NAMBE), Banff, Alberta, Canada, Oct 2004.
  6. T. Gugov, V. Gambin, M. A. Wistey, H. B. Yuen, S. R. Bank, and J. S. Harris, "TEM Structural Characterization of GaInNAs and GaInNAsSb Quantum Wells Grown by Molecular Beam Epitaxy," 46th Electronic Materials Conf. (EMC), Notre Dame, IN, Jun 2004.
  7. T. Gugov, M. A. Wistey, H. B. Yuen, S. R. Bank, and J. S. Harris, "Structural Characterization of Molecular Beam Epitaxy Grown GaInNAs and GaInNAsSb Quantum Wells by Transmission Electron Microscopy," Materials Research Symposium (MRS), San Francisco, CA, Apr 2004.
  8. T. Gugov, V. Gambin, M. A. Wistey, H. B. Yuen, S. R. Bank, and J. S. Harris, "Use of Transmission Electron Microscopy in the Characterization of GaInNAs(Sb) Quantum Well Structures Grown by Molecular Beam Epitaxy," North American Molecular Beam Epitaxy Conf. (NAMBE), Keystone, CO, Oct 2003.