Publications

Displaying 26 publications
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Journal Article

  1. E. M. Krivoy, A. P. Vasudev, S. Rahimi, R. A. Synowicki, K. M. McNicholas, D. J. Ironside, R. Salas, G. Kelp, D. Jung, H. P. Nair, G. Shvets, D. Akinwande, M. L. Lee, M. L. Brongersma, and S. R. Bank, "Rare-earth monopnictide alloys for tunable, epitaxial, designer plasmonics," ACS Photonics, vol. 5, pp. 3051-3056, Jul 2018. Digital object identifier
  2. S. Rahimi, E. M. Krivoy, J. Lee, M. E. Michael, S. R. Bank, and D. Akinwande, "Temperature dependence of the electrical resistivity of LaLuAs," AIP Advances, vol. 3, no. 8, pp. 082102, Jul 2013. Digital object identifier
  3. E. M. Krivoy, S. Rahimi, H. P. Nair, R. Salas, S. J. Maddox, D. J. Ironside, Y. Jiang, G. Kelp, G. Shvets, D. Akinwande, and S. R. Bank, "Growth and characterization of single crystal rocksalt LaAs using LuAs barrier layers," APL, vol. 101, no. 22, pp. 221908, Nov 2012. Digital object identifier
  4. E. M. Krivoy, H. P. Nair, A. M. Crook, S. Rahimi, S. J. Maddox, R. Salas, D. A. Ferrer, V. D. Dasika, D. Akinwande, and S. R. Bank, "Growth and characterization of LuAs films and nanostructures," APL, vol. 101, no. 14, pp. 141910, Oct 2012. Digital object identifier
  5. R. Kudrawiec, S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, L. L. Goddard, J. S. Harris, M. Gladysiewicz, M. Motyka, and J. Misiewicz, "Conduction band offset for Ga0. 62In0. 38NxAs0. 991 - xSb0. 009/GaNyAs1 - y/GaAs systems with the ground state transition at 1. 5-1. 65 \µm," APL, vol. 90, no. 13, pp. 131905, Mar 2007. Digital object identifier
  6. R. Kudrawiec, H. B. Yuen, M. Motyka, M. Gladysiewicz, J. Misiewicz, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "Contactless electroreflectance of GaInNAsSb∕GaAs single quantum wells with indium content of 8%–32%," J. of Appl. Phys., vol. 101, no. 1, pp. 013504, Jan 2007. Digital object identifier
  7. R. Kudrawiec, M. Gladysiewicz, J. Misiewicz, H. B. Yuen, S. R. Bank, M. A. Wistey, H. P. Bae, and J. S. Harris, "Interband transitions in GaN0. 02As0. 98-xSbx/GaAs (0<x<0. 11) single quantum wells studied by contactless electroreflectance spectroscopy," Phys. Rev. B, vol. 73, pp. 245413, Jun 2006. Digital object identifier
  8. R. Kudrawiec, M. Motyka, M. Gladysiewicz, J. Misiewicz, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "Band gap discontinuity in Ga0. 9In0. 1N0. 027As0. 973 - xSbx/GaAs single quantum wells with 0 ≤ x < 0. 06 studied by contactless electroreflectance spectroscopy," APL, vol. 88, no. 22, pp. 221113, May 2006. Digital object identifier

Conference Paper

  1. R. C. White, M. K. Bergthold, A. F. Ricks, F. A. Estévez, D. Wasserman, and S. R. Bank, "Bismuth Incorporation into InSb Towards Long-Wave Infrared Photodetectors," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  2. A. M. García, B. D. Aguilar, W. J. Doyle, Y. Wang, D. J. Ironside, A. M. Skipper, M. K. Bergthold, M. L. Lee, D. Wasserman, and S. R. Bank, "Molecular Beam Epitaxy Selective Area Regrowth of High Aspect Ratio Microstructures for Mid-Infrared Optoelectronics," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  3. A. M. García, A. M. Skipper, M. K. Bergthold, and S. R. Bank, "SiO2 Surface Planarization for Selective Area Regrowth of High Aspect Ratio Microstructures," 37th North American Molecular Beam Epitaxy Conf. (NAMBE), Madison, WI, Sep 2023.
  4. R. C. White, M. K. Bergthold, T. A. Leonard, A. F. Ricks, D. Wasserman, and S. R. Bank, "InSb-Based Dilute-Bismide Alloys Towards Long-Wave Infrared Sensing," 37th North American Molecular Beam Epitaxy Conf. (NAMBE), Madison, WI, Sep 2023.
  5. A. F. Ricks, R. C. White, Q. Meng, M. K. Bergthold, M. A. Wistey, D. Wasserman, and S. R. Bank, "Bismuth Incorporation in AlInSb for Wide-Bandgap Barriers on InSb," 65th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2023.
  6. R. C. White, M. K. Bergthold, T. A. Leonard, A. F. Ricks, D. Wasserman, and S. R. Bank, "Optical and Structural Properties of InSb-Based Dilute-Bismide Alloys Grown by Molecular Beam Epitaxy," 65th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2023.
  7. R. C. White, M. K. Bergthold, A. J. Muhowski, Y. Wang, I. Okoro, D. Wasserman, and S. R. Bank, "Lattice-Matched InAsSbBi Photodetectors for Long-Wave Infrared Sensing," 81st Device Research Conf. (DRC), Santa Barbara, CA, Jun 2023.
  8. A. M. García, A. M. Skipper, M. K. Bergthold, and S. R. Bank, "SiO2 Surface Planarization for Molecular Beam Epitaxy Selective Area Regrowth of High Aspect Ratio Microstructures," 65th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2023.
  9. R. C. White, M. K. Bergthold, I. Okoro, Y. Wang, L. J. Nordin, A. J. Muhowski, A. F. Ricks, D. Wasserman, and S. R. Bank, "Towards Lattice-Matched Narrow Bandgap InAsSbBi Photodetectors," 36th North American Molecular Beam Epitaxy Conf. (NAMBE), Rehoboth Beach, DE, Sep 2022.
  10. A. M. Skipper, A. H. Jones, M. K. Bergthold, A. J. Muhowski, A. M. García, D. J. Ironside, D. Wasserman, J. C. Campbell, and S. R. Bank, "Selective Area Epitaxy by MBE for Self-Aligned III-V Devices," 64th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2022.
  11. A. F. Ricks, R. C. White, Q. Meng, M. K. Bergthold, M. A. Wistey, and S. R. Bank, "Growth and characterization of AlInSbBi for wide-bandgap barriers on InSb," 64th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2022.
  12. R. C. White, M. K. Bergthold, A. J. Muhowski, L. J. Nordin, A. F. Ricks, D. Wasserman, and S. R. Bank, "Growth of InAsSbBi on InSb Towards Lattice-Matched Longwave-Infrared Optoelectronics," 64th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2022.
  13. H. S. Maczko, J. Kopaczek, S. J. Maddox, A. K. Rockwell, S. D. March, M. Gladysiewicz, S. R. Bank, and R. Kudrawiec, "An AlInAsSb/GaSb Superlattice Analysis–The Digital Alloy Iduced Conduction Band States," International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Hong Kong, China, Nov 2018. Digital object identifier
  14. S. Rahimi, E. M. Krivoy, J. Lee, S. R. Bank, and D. Akinwande, "Temperature and Thickness Dependence of Electrical Resistivity of LaLuAs," 55th Electronic Materials Conf. (EMC), South Bend, IN, Jun 2013.
  15. E. M. Krivoy, H. P. Nair, A. M. Crook, S. Rahimi, Y. Jiang, S. J. Maddox, R. Salas, G. Kelp, G. Shvets, M. A. Belkin, D. Akinwande, and S. R. Bank, "Rare-earth monopnictide alloys for tunable epitaxial semimetals," North American Molecular Beam Epitaxy Conf. (NAMBE), Atlanta, GA, Oct 2012.
  16. E. M. Krivoy, H. P. Nair, A. M. Crook, S. Rahimi, Y. Jiang, S. J. Maddox, R. Salas, M. A. Belkin, D. Akinwande, and S. R. Bank, "Rare-earth monopnictides films for tunable frequency transparent Ohmic contacts," 54th Electronic Materials Conf. (EMC), Jun 2012.
  17. E. M. Krivoy, H. P. Nair, S. J. Maddox, R. Salas, S. Rahimi, Y. Jiang, M. A. Belkin, D. Akinwande, and S. R. Bank, "Growth of high-quality rocksalt LaAs on LuAs seeded templates," 54th Electronic Materials Conf. (EMC), Jun 2012.
  18. S. R. Bank, H. P. Bae, H. B. Yuen, M. A. Wistey, L. L. Goddard, J. S. Harris, R. Kudrawiec, M. Gladysiewicz, M. Motyka, and J. Misiewicz, "Low-Threshold Continuous-Wave 1. 55-\µm GaInNAsSb lasers," Conf. on Lasers and Electro Optics (CLEO), Long Beach, CA, May 2006.