Publications

Displaying 11 publications
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Journal Article

  1. T. Trivedi, A. Roy, H. C. P. Movva, E. S. Walker, S. R. Bank, D. P. Neikirk, and S. K. Banerjee, "Versatile Large-Area Custom-Feature van der Waals Epitaxy of Topological Insulators," ACS Nano, vol. 11, pp. 7457-7467, Jul 2017. Digital object identifier
  2. R. Kudrawiec, S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, L. L. Goddard, J. S. Harris, M. Gladysiewicz, M. Motyka, and J. Misiewicz, "Conduction band offset for Ga0. 62In0. 38NxAs0. 991 - xSb0. 009/GaNyAs1 - y/GaAs systems with the ground state transition at 1. 5-1. 65 \µm," APL, vol. 90, no. 13, pp. 131905, Mar 2007. Digital object identifier
  3. R. Kudrawiec, H. B. Yuen, M. Motyka, M. Gladysiewicz, J. Misiewicz, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "Contactless electroreflectance of GaInNAsSb∕GaAs single quantum wells with indium content of 8%–32%," J. of Appl. Phys., vol. 101, no. 1, pp. 013504, Jan 2007. Digital object identifier
  4. R. Kudrawiec, M. Gladysiewicz, J. Misiewicz, H. B. Yuen, S. R. Bank, M. A. Wistey, H. P. Bae, and J. S. Harris, "Interband transitions in GaN0. 02As0. 98-xSbx/GaAs (0<x<0. 11) single quantum wells studied by contactless electroreflectance spectroscopy," Phys. Rev. B, vol. 73, pp. 245413, Jun 2006. Digital object identifier
  5. R. Kudrawiec, M. Motyka, M. Gladysiewicz, J. Misiewicz, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "Band gap discontinuity in Ga0. 9In0. 1N0. 027As0. 973 - xSbx/GaAs single quantum wells with 0 ≤ x < 0. 06 studied by contactless electroreflectance spectroscopy," APL, vol. 88, no. 22, pp. 221113, May 2006. Digital object identifier

Conference Paper

  1. H. S. Maczko, J. Kopaczek, S. J. Maddox, A. K. Rockwell, S. D. March, M. Gladysiewicz, S. R. Bank, and R. Kudrawiec, "An AlInAsSb/GaSb Superlattice Analysis–The Digital Alloy Iduced Conduction Band States," International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Hong Kong, China, Nov 2018. Digital object identifier
  2. S. E. Muschinske, E. S. Walker, C. J. Brennan, Y. Sun, A. Yau, T. Trivedi, A. Roy, S. D. March, A. F. Briggs, E. M. Krivoy, D. Akinwande, M. L. Lee, E. T. Yu, and S. R. Bank, "Epitaxial Growth and Characterization of 2-D BixSb1-x Alloys on Si(111)," 60th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2018.
  3. S. R. Bank, H. P. Bae, H. B. Yuen, M. A. Wistey, L. L. Goddard, J. S. Harris, R. Kudrawiec, M. Gladysiewicz, M. Motyka, and J. Misiewicz, "Low-Threshold Continuous-Wave 1. 55-\µm GaInNAsSb lasers," Conf. on Lasers and Electro Optics (CLEO), Long Beach, CA, May 2006.
  4. D. S. Gardner, S. R. Bank, L. L. Goddard, P. Griffin, J. S. Harris, R. Swanson, and J. R. Patel, "On the Luminescence Efficiency of Silicon Diodes," Materials Research Society (MRS) Spring Meeting, San Francisco, CA, Apr 2003.
  5. (Plenary) D. S. Gardner, F. Paillet, T. Karnik, R. Swanson, S. R. Bank, X. Liu, P. Griffin, J. R. Patel, and J. S. Harris, "Silicon-Based Light Emitting Devices," The AVS International Conf. on Microelectronics and Interfaces, Santa Clara, CA, Mar 2003.
  6. D. S. Gardner, S. R. Bank, P. Griffin, J. S. Harris, R. Swanson, and J. R. Patel, "On the Luminescence Efficiency of Silicon Diodes," Optical Amplification and Stimulation in Silicon (OASIS), Trento, Italy, Sep 2002.