Publications

Displaying 14 publications
Quote related keywords (e.g. "66th Electronic Materials Conf.")

Journal Article

  1. E. M. Krivoy, A. P. Vasudev, S. Rahimi, R. A. Synowicki, K. M. McNicholas, D. J. Ironside, R. Salas, G. Kelp, D. Jung, H. P. Nair, G. Shvets, D. Akinwande, M. L. Lee, M. L. Brongersma, and S. R. Bank, "Rare-earth monopnictide alloys for tunable, epitaxial, designer plasmonics," ACS Photonics, vol. 5, pp. 3051-3056, Jul 2018. Digital object identifier
  2. R. Kudrawiec, S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, L. L. Goddard, J. S. Harris, M. Gladysiewicz, M. Motyka, and J. Misiewicz, "Conduction band offset for Ga0. 62In0. 38NxAs0. 991 - xSb0. 009/GaNyAs1 - y/GaAs systems with the ground state transition at 1. 5-1. 65 \µm," APL, vol. 90, no. 13, pp. 131905, Mar 2007. Digital object identifier
  3. R. Kudrawiec, H. B. Yuen, M. Motyka, M. Gladysiewicz, J. Misiewicz, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "Contactless electroreflectance of GaInNAsSb∕GaAs single quantum wells with indium content of 8%–32%," J. of Appl. Phys., vol. 101, no. 1, pp. 013504, Jan 2007. Digital object identifier
  4. Y. Xin, A. Stintz, H. Cao, L. Zhang, A. Gray, S. R. Bank, M. Osinski, J. S. Harris, and L. F. Lester, "Monolithic passively mode-locked lasers using quantum-dot or quantum-well materials grown on GaAs substrates," Proc. SPIE, Proc. SPIE, San Jose, CA, vol. 6468, pp. 46, Jan 2007.
  5. R. Kudrawiec, M. Gladysiewicz, J. Misiewicz, H. B. Yuen, S. R. Bank, M. A. Wistey, H. P. Bae, and J. S. Harris, "Interband transitions in GaN0. 02As0. 98-xSbx/GaAs (0<x<0. 11) single quantum wells studied by contactless electroreflectance spectroscopy," Phys. Rev. B, vol. 73, pp. 245413, Jun 2006. Digital object identifier
  6. R. Kudrawiec, M. Motyka, M. Gladysiewicz, J. Misiewicz, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "Band gap discontinuity in Ga0. 9In0. 1N0. 027As0. 973 - xSbx/GaAs single quantum wells with 0 ≤ x < 0. 06 studied by contactless electroreflectance spectroscopy," APL, vol. 88, no. 22, pp. 221113, May 2006. Digital object identifier

Conference Paper

  1. H. S. Maczko, J. Kopaczek, S. J. Maddox, A. K. Rockwell, S. D. March, M. Gladysiewicz, S. R. Bank, and R. Kudrawiec, "An AlInAsSb/GaSb Superlattice Analysis–The Digital Alloy Iduced Conduction Band States," International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Hong Kong, China, Nov 2018. Digital object identifier
  2. S. J. Maddox, A. P. Vasudev, V. D. Dasika, S. D. March, M. L. Brongersma, and S. R. Bank, "Effects of Growth Rate, Substrate Temperature, and a Bi Surfactant on Doping Limits in InAs:Si Grown by Molecular Beam Epitaxy," 56th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2014.
  3. S. J. Maddox, A. P. Vasudev, V. D. Dasika, M. L. Brongersma, and S. R. Bank, "Exploring the Limits of Silicon Doping in InAs for Mid-Infrared Plasmonics," North American Molecular Beam Epitaxy Conf. (NAMBE), Banff, Alberta, Canada, Oct 2013.
  4. E. M. Krivoy, A. P. Vasudev, H. P. Nair, V. D. Dasika, R. A. Synowicki, R. Salas, S. J. Maddox, M. L. Brongersma, and S. R. Bank, "Tunable, Epitaxial, Semimetallic Films for Plasmonics," Conf. on Lasers and Electro Optics (CLEO), San Jose, CA, Jun 2013.
  5. A. P. Vasudev, S. J. Maddox, J. Kang, S. R. Bank, and M. L. Brongersma, "Tunable Mid-infrared Semiconductor Plasmonics," Materials Research Society (MRS) Spring Meeting, San Francisco, CA, Apr 2013.
  6. S. J. Maddox, A. P. Vasudev, V. D. Dasika, M. L. Brongersma, and S. R. Bank, "Bismuth Surfactant-Mediated Epitaxy of Highly Doped InAs for Mid-Infrared Plasmonics," North American Molecular Beam Epitaxy Conf. (NAMBE), Stone Mountain Park, GA, Oct 2012.
  7. A. P. Vasudev, S. J. Maddox, M. L. Brongersma, and S. R. Bank, "Mid-Infrared Surface Plasmons on Epitaxial Semiconductors," Gordon Research Conf., Waterville, ME, Jun 2012.
  8. S. R. Bank, H. P. Bae, H. B. Yuen, M. A. Wistey, L. L. Goddard, J. S. Harris, R. Kudrawiec, M. Gladysiewicz, M. Motyka, and J. Misiewicz, "Low-Threshold Continuous-Wave 1. 55-\µm GaInNAsSb lasers," Conf. on Lasers and Electro Optics (CLEO), Long Beach, CA, May 2006.