Publications

Displaying 18 publications
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Journal Article

  1. D. Wei, B. Gao, A. A. Dadey, J. A. McArthur, J. Bai, S. R. Bank, and J. C. Campbell, "Broadband Quantum Efficiency Enhancement of AlInAsSb p–i–n Photodiodes with All-Dielectric Amorphous Germanium Metasurfaces," Adv. Phot. Res., Jun 2024. Digital object identifier
  2. D. Chen, S. D. March, A. H. Jones, Y. Shen, A. A. Dadey, K. Sun, J. A. McArthur, A. M. Skipper, X. Xue, B. Guo, J. Bai, S. R. Bank, and J. C. Campbell, "Photon-trapping-enhanced avalanche photodiodes for mid-infrared applications," Nature Photonics, May 2023. Digital object identifier
  3. G. J. Burek, M. A. Wistey, U. Singisetti, A. Nelson, B. J. Thibeault, S. R. Bank, M. J. Rodwell, and A. C. Gossard, "Height-selective etching for regrowth of self-aligned contacts using MBE," J. Cryst. Growth, vol. 311, no. 7, pp. 1984-1987, Mar 2009. Digital object identifier
  4. U. Singisetti, J. D. Zimmerman, M. A. Wistey, J. Cagnon, B. J. Thibeault, M. J. Rodwell, A. C. Gossard, S. Stemmer, and S. R. Bank, "ErAs epitaxial Ohmic contacts to InGaAs/InP," APL, vol. 94, no. 8, pp. 083505-083505, Feb 2009. Digital object identifier
  5. U. Singisetti, M. A. Wistey, J. D. Zimmerman, B. J. Thibeault, M. J. Rodwell, A. C. Gossard, and S. R. Bank, "Ultralow resistance in situ Ohmic contacts to InGaAs/InP," APL, vol. 93, no. 18, pp. 183502, Nov 2008. Digital object identifier
  6. R. Kudrawiec, S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, L. L. Goddard, J. S. Harris, M. Gladysiewicz, M. Motyka, and J. Misiewicz, "Conduction band offset for Ga0. 62In0. 38NxAs0. 991 - xSb0. 009/GaNyAs1 - y/GaAs systems with the ground state transition at 1. 5-1. 65 \µm," APL, vol. 90, no. 13, pp. 131905, Mar 2007. Digital object identifier
  7. R. Kudrawiec, H. B. Yuen, M. Motyka, M. Gladysiewicz, J. Misiewicz, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "Contactless electroreflectance of GaInNAsSb∕GaAs single quantum wells with indium content of 8%–32%," J. of Appl. Phys., vol. 101, no. 1, pp. 013504, Jan 2007. Digital object identifier
  8. R. Kudrawiec, M. Gladysiewicz, J. Misiewicz, H. B. Yuen, S. R. Bank, M. A. Wistey, H. P. Bae, and J. S. Harris, "Interband transitions in GaN0. 02As0. 98-xSbx/GaAs (0<x<0. 11) single quantum wells studied by contactless electroreflectance spectroscopy," Phys. Rev. B, vol. 73, pp. 245413, Jun 2006. Digital object identifier
  9. R. Kudrawiec, M. Motyka, M. Gladysiewicz, J. Misiewicz, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "Band gap discontinuity in Ga0. 9In0. 1N0. 027As0. 973 - xSbx/GaAs single quantum wells with 0 ≤ x < 0. 06 studied by contactless electroreflectance spectroscopy," APL, vol. 88, no. 22, pp. 221113, May 2006. Digital object identifier

Conference Paper

  1. H. S. Maczko, J. Kopaczek, S. J. Maddox, A. K. Rockwell, S. D. March, M. Gladysiewicz, S. R. Bank, and R. Kudrawiec, "An AlInAsSb/GaSb Superlattice Analysis–The Digital Alloy Iduced Conduction Band States," International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Hong Kong, China, Nov 2018. Digital object identifier
  2. M. A. Wistey, U. Singisetti, G. J. Burek, B. J. Thibeault, J. Cagnon, S. Stemmer, S. R. Bank, Y. Sun, E. J. Kiewra, D. K. Sadana, A. C. Gossard, and M. J. Rodwell, "Self-aligned III-V MOSFETs for sub-22nm Nodes," SRC Techcon, Austin, TX, Aug 2008.
  3. M. A. Wistey, G. J. Burek, U. Singisetti, A. M. Crook, B. J. Thibeault, S. R. Bank, M. J. Rodwell, and A. C. Gossard, "Regrowth of Self-Aligned, Ultra Low Resistance Ohmic Contacts on InGaAs," International Conf. on Molecular Beam Epitaxy (MBE), Vancouver, BC, Canada, Aug 2008.
  4. M. J. Rodwell, E. Lind, Z. Griffith, A. M. Crook, S. R. Bank, U. Singisetti, M. A. Wistey, G. J. Burek, and A. C. Gossard, "On the Feasibility of few-THz Bipolar Transistors," Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM 07. IEEE, pp. 17-21, Sep 2007. Digital object identifier
  5. U. Singisetti, A. M. Crook, E. Lind, M. A. Wistey, J. D. Zimmerman, A. C. Gossard, M. J. Rodwell, and S. R. Bank, "Ultra-Low Resistance Ohmic Contacts to InGaAs/InP," 65th Device Research Conf. (DRC), South Bend, IN, Jun 2007.
  6. (Plenary) M. J. Rodwell, E. Lind, Z. Griffith, S. R. Bank, A. M. Crook, U. Singisetti, M. A. Wistey, G. J. Burek, and A. C. Gossard, "Frequency limits of InP-based integrated circuits," 19th International Conf. on Indium-Phosphide and Related Materials (IPRM), Matsue, Japan, pp. 9-13, May 2007. Digital object identifier
  7. S. R. Bank, U. Singisetti, A. M. Crook, J. D. Zimmerman, J. M. O. Zide, A. C. Gossard, and M. J. Rodwell, "MBE Growth of ErAs/In(Ga)As Epitaxial Ultra-Low Resistance Ohmic Contacts," North American Molecular Beam Epitaxy Conf. (NAMBE), Sep 2006.
  8. (Plenary) M. J. Rodwell, Z. Griffith, N. Parthasarathy, E. Lind, C. Sheldon, S. R. Bank, U. Singisetti, M. Urteaga, K. Shinohara, R. Pierson, and P. Rowell, "Developing Bipolar Transistors for Sub-mm-Wave Amplifiers and Next-Generation (300 GHz) Digital Circuits," 64th Device Research Conf. (DRC), State College, PA, Jun 2006.
  9. S. R. Bank, H. P. Bae, H. B. Yuen, M. A. Wistey, L. L. Goddard, J. S. Harris, R. Kudrawiec, M. Gladysiewicz, M. Motyka, and J. Misiewicz, "Low-Threshold Continuous-Wave 1. 55-\µm GaInNAsSb lasers," Conf. on Lasers and Electro Optics (CLEO), Long Beach, CA, May 2006.