Publications

Displaying 16 publications
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Journal Article

  1. A. A. Dadey, J. A. McArthur, A. Kamboj, S. R. Bank, D. Wasserman, and J. C. Campbell, "High-gain low-excess-noise MWIR detection with a 3. 5-µm cutoff AlInAsSbbased separate absorption, charge, and multiplication avalanche photodiode," APL Photonics, vol. 101, no. 24, pp. 036101, Mar 2023. Digital object identifier
  2. A. J. Muhowski, A. Kamboj, A. F. Briggs, L. J. Nordin, S. R. Bank, and D. Wasserman, "Cascaded InGaSb quantum dot mid-infrared LEDs," Journal of Applied Physics, vol. 131, no. 4, Jan 2022. Digital object identifier
  3. L. J. Nordin, A. Kamboj, E. Simmons, P. Petluru, A. J. Muhowski, A. F. Briggs, S. R. Bank, V. A. Podolskiy, and D. Wasserman, "Active plasmonic optoelectronics," Active Photonic Platforms XIII, Virtual, Aug 2021.
  4. E. S. Walker, S. E. Muschinske, C. J. Brennan, S. Ryul. Na, T. Trivedi, S. D. March, Y. Sun, T. Yang, A. Yau, D. Jung, A. F. Briggs, E. M. Krivoy, M. L. Lee, K. M. Liechti, E. T. Yu, D. Akinwande, and S. R. Bank, "Composition-dependent structural transition in epitaxial Bi1-xSbx thin films on Si(111)," Physical Review Materials, vol. 3, no. 6, pp. 064201, Jun 2019. Digital object identifier
  5. E. S. Walker, S. Ryul. Na, D. Jung, S. D. March, J. Kim, T. Trivedi, W. Li, L. Tao, M. L. Lee, K. M. Liechti, D. Akinwande, and S. R. Bank, "Large-Area Dry Transfer of Single-Crystalline Epitaxial Bismuth Thin Films," Nano Letters, vol. 16, no. 11, pp. 6931-6938, Oct 2016. Digital object identifier
  6. R. Kudrawiec, S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, L. L. Goddard, J. S. Harris, M. Gladysiewicz, M. Motyka, and J. Misiewicz, "Conduction band offset for Ga0. 62In0. 38NxAs0. 991 - xSb0. 009/GaNyAs1 - y/GaAs systems with the ground state transition at 1. 5-1. 65 \µm," APL, vol. 90, no. 13, pp. 131905, Mar 2007. Digital object identifier
  7. R. Kudrawiec, H. B. Yuen, M. Motyka, M. Gladysiewicz, J. Misiewicz, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "Contactless electroreflectance of GaInNAsSb∕GaAs single quantum wells with indium content of 8%–32%," J. of Appl. Phys., vol. 101, no. 1, pp. 013504, Jan 2007. Digital object identifier
  8. R. Kudrawiec, M. Gladysiewicz, J. Misiewicz, H. B. Yuen, S. R. Bank, M. A. Wistey, H. P. Bae, and J. S. Harris, "Interband transitions in GaN0. 02As0. 98-xSbx/GaAs (0<x<0. 11) single quantum wells studied by contactless electroreflectance spectroscopy," Phys. Rev. B, vol. 73, pp. 245413, Jun 2006. Digital object identifier
  9. R. Kudrawiec, M. Motyka, M. Gladysiewicz, J. Misiewicz, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "Band gap discontinuity in Ga0. 9In0. 1N0. 027As0. 973 - xSbx/GaAs single quantum wells with 0 ≤ x < 0. 06 studied by contactless electroreflectance spectroscopy," APL, vol. 88, no. 22, pp. 221113, May 2006. Digital object identifier

Conference Paper

  1. H. S. Maczko, J. Kopaczek, S. J. Maddox, A. K. Rockwell, S. D. March, M. Gladysiewicz, S. R. Bank, and R. Kudrawiec, "An AlInAsSb/GaSb Superlattice Analysis–The Digital Alloy Iduced Conduction Band States," International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Hong Kong, China, Nov 2018. Digital object identifier
  2. A. F. Briggs, A. Kamboj, Z. Dong, L. J. Nordin, D. Wasserman, and S. R. Bank, "Pairing Mid-Infrared Emitters with Epitaxial Epsilon-Near-Zero Metamaterial Grown by Molecular Beam Epitaxy," 60th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2018.
  3. E. S. Walker, S. Ryul. Na, Y. Sun, C. J. Brennan, F. He, R. H. Roberts, N. Yoon, S. E. Muschinske, S. D. March, A. F. Briggs, D. Wasserman, D. Akinwande, Y. Wang, E. T. Yu, M. L. Lee, K. M. Liechti, and S. R. Bank, "Epitaxial Growth and Transfer of Bismuth and Bismuth Antimonide Thin Films," SRC TECHCON, Austin, TX, Sep 2017.
  4. E. S. Walker, S. E. Muschinske, R. H. Roberts, N. Yoon, C. J. Brennan, S. Ryul. Na, S. D. March, Y. Sun, A. F. Briggs, E. Davis, D. Akinwande, K. M. Liechti, E. T. Yu, D. Wasserman, and S. R. Bank, "Epitaxial Growth and Transfer of BixSb1-x Thin Films," 59th Electronic Materials Conf. (EMC), South Bend, IN, Jun 2017.
  5. S. E. Muschinske, E. S. Walker, S. Ryul. Na, S. D. March, A. F. Briggs, D. Akinwande, K. M. Liechti, and S. R. Bank, "Epitaxial Bismuth Transfer to Arbitrary Substrates Using Thermal Release Tape," 59th Electronic Materials Conf. (EMC), South Bend, IN, Jun 2017.
  6. E. S. Walker, S. Ryul. Na, D. Jung, S. D. March, Y. Liu, T. Trivedi, W. Li, L. Tao, M. L. Lee, K. M. Liechti, D. Akinwande, and S. R. Bank, "Growth and Transfer of Epitaxial Bismuth Films for Flexible Electronics," 58th Electronic Materials Conf. (EMC), Newark, DE, Jun 2016.
  7. S. R. Bank, H. P. Bae, H. B. Yuen, M. A. Wistey, L. L. Goddard, J. S. Harris, R. Kudrawiec, M. Gladysiewicz, M. Motyka, and J. Misiewicz, "Low-Threshold Continuous-Wave 1. 55-\µm GaInNAsSb lasers," Conf. on Lasers and Electro Optics (CLEO), Long Beach, CA, May 2006.