Publications

Displaying 14 publications
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Journal Article

  1. P. Kompella, B. Gracia, L. LeBlanc, S. Engelman, C. Kulkarni, N. Desai, V. June, S. D. March, S. Pattengale, G. Rodriguez-Rivera, S. Woo. Ryu, I. Strohkendl, P. Mandke, and G. Clark, "Interactive youth science workshops benefit student participants and graduate student mentors," PLOS Biology, vol. 18, no. 3, pp. 1-10, Mar 2020. Digital object identifier
  2. H. P. Nair, A. M. Crook, K. M. Yu, and S. R. Bank, "Structural and optical studies of nitrogen incorporation into GaSb-based GaInSb quantum wells," APL, vol. 100, no. 2, pp. 021103, Jan 2012. Digital object identifier
  3. R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, and J. Misiewicz, "On the Fermi level pinning in as-grown GaInNAs(Sb)/GaAs quantum wells with indium content of 8%\—32%," J. Appl. Phys., vol. 104, no. 3, pp. 033526, Aug 2008. Digital object identifier
  4. R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, and J. Misiewicz, "Contactless electroreflectance approach to study the Fermi level position in GaInNAs/GaAs quantum wells," J. Appl. Phys., vol. 102, no. 11, pp. 113501, Dec 2007. Digital object identifier
  5. R. Kudrawiec, S. R. Bank, H. B. Yuen, H. P. Bae, M. A. Wistey, L. L. Goddard, J. S. Harris, M. Gladysiewicz, M. Motyka, and J. Misiewicz, "Conduction band offset for Ga0. 62In0. 38NxAs0. 991 - xSb0. 009/GaNyAs1 - y/GaAs systems with the ground state transition at 1. 5-1. 65 \µm," APL, vol. 90, no. 13, pp. 131905, Mar 2007. Digital object identifier
  6. R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, and J. Misiewicz, "Fermi level shift in GaInNAsSb/GaAs quantum wells upon annealing studied by contactless electroreflectance," APL, vol. 90, no. 6, pp. 061902, Feb 2007. Digital object identifier
  7. R. Kudrawiec, H. B. Yuen, M. Motyka, M. Gladysiewicz, J. Misiewicz, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "Contactless electroreflectance of GaInNAsSb∕GaAs single quantum wells with indium content of 8%–32%," J. of Appl. Phys., vol. 101, no. 1, pp. 013504, Jan 2007. Digital object identifier
  8. R. Kudrawiec, M. Motyka, M. Gladysiewicz, J. Misiewicz, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, and J. S. Harris, "Band gap discontinuity in Ga0. 9In0. 1N0. 027As0. 973 - xSbx/GaAs single quantum wells with 0 ≤ x < 0. 06 studied by contactless electroreflectance spectroscopy," APL, vol. 88, no. 22, pp. 221113, May 2006. Digital object identifier

Conference Paper

  1. S. D. Sifferman, M. Motyka, A. F. Briggs, K. J. Underwood, K. M. McNicholas, R. Kudrawiec, J. T. Gopinath, and S. R. Bank, "Dilute-Bismide Alloys for GaSb-based Mid-Infrared Semiconductor Lasers," Conf. on Lasers and Electro Optics (CLEO), San Jose, CA, May 2018.
  2. S. J. Maddox, K. M. Yu, A. J. Ptak, H. P. Nair, V. D. Dasika, and S. R. Bank, "Optical and Structural Characterization of InAsBi and InGaAsBi Grown by Molecular Beam Epitaxy," 55th Electronic Materials Conf. (EMC), South Bend, IN, Jun 2013.
  3. H. P. Nair, A. M. Crook, K. M. Yu, and S. R. Bank, "Thermal Annealing Induced Optical Quality Enhancement in GaSb-Based Dilute-Nitrides," 54th Electronic Materials Conf. (EMC), University Park, PA, Jun 2012.
  4. H. P. Nair, A. M. Crook, K. M. Yu, and S. R. Bank, "Dilute-Nitride Active Regions on GaSb for Mid-Infrared Semiconductor Diode Lasers," Conf. on Lasers and Electro Optics (CLEO), San Jose, CA, May 2012.
  5. H. P. Nair, A. M. Crook, K. M. Yu, and S. R. Bank, "Room Temperature Photoluminescence from a GaSb-Based Dilute-Nitride QW," North American Molecular Beam Epitaxy Conf. (NAMBE), San Diego, CA, Aug 2011.
  6. S. R. Bank, H. P. Bae, H. B. Yuen, M. A. Wistey, L. L. Goddard, J. S. Harris, R. Kudrawiec, M. Gladysiewicz, M. Motyka, and J. Misiewicz, "Low-Threshold Continuous-Wave 1. 55-\µm GaInNAsSb lasers," Conf. on Lasers and Electro Optics (CLEO), Long Beach, CA, May 2006.