Publications
Journal Article
- J. A. McArthur, A. A. Dadey, K. Circir, S. D. March, X. Xue, D. Chen, A. H. Jones, A. Dolocan, J. C. Campbell, and S. R. Bank, "Source impurity contributions and polarity inverting in the unintentional doping of AlInAsSb digital alloys grown via molecular beam epitaxy," Crystal Growth & Design, vol. 25, no. 2, pp. 392-399, Dec 2024.
- M. Ren, S. J. Maddox, M. E. Woodson, J. Chen, S. R. Bank, and J. C. Campbell, "Characteristics of AlxIn1-xAsySb1-y (x:0. 3~0. 7) Avalanche Photodiodes," IEEE/OSA Journal of Lightwave Technology, vol. 35, pp. 2380, Jun 2017.
Conference Paper
- E. Y. Wang, H. Karimi, M. Waqar, X. Pan, J. C. Campbell, and S. R. Bank, "Growth and Characterization of Ternary-Containing AlInAsSb Digital Alloys," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
- E. Y. Wang, J. A. McArthur, H. Karimi, P. Devaney, J. C. Campbell, and S. R. Bank, "Effect of Varying Period Structure on Tunneling Current in AlInAsSb Digital Alloys," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
- J. A. McArthur, A. A. Dadey, E. Y. Wang, H. Karimi, J. C. Campbell, and S. R. Bank, "Suppressing AlInAsSb Avalanche Photodiode Dark Currents by Tuning the Absorption Region," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
- J. A. McArthur, H. Karimi, L. Sauer, J. C. Campbell, and S. R. Bank, "Manipulating the opto-electronic properties of AlInAsSb digital alloys by adjusting the period thickness," 65th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2023.