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Journal Article

  1. J. A. McArthur, A. A. Dadey, K. Circir, S. D. March, X. Xue, D. Chen, A. H. Jones, A. Dolocan, J. C. Campbell, and S. R. Bank, "Source impurity contributions and polarity inverting in the unintentional doping of AlInAsSb digital alloys grown via molecular beam epitaxy," Crystal Growth & Design, vol. 25, no. 2, pp. 392-399, Dec 2024. Digital object identifier
  2. J. K. Saha, S. A. A. Taqy, P. K. Sarkar, I. Rahaman, A. W. Arbogast, T. Dey, A. Dolocan, M. R. R. Munna, K. Alam, D. Wasserman, S. R. Bank, and M. A. Wistey, "Observation of low-resistance Al and Ni p-type ohmic contacts to dilute GeC and GeCSn alloys," J. Vac. Sci. Technol. B, vol. 42, no. 6, pp. 062211, Nov 2024. Digital object identifier
  3. M. M. Oye, T. J. Mattord, G. A. Hallock, S. R. Bank, M. A. Wistey, J. M. Reifsnider, A. J. Ptak, H. B. Yuen, J. S. Harris, and A. L. Holmes Jr., "Effects of different plasma species (atomic N, metastable N2*, and ions) on the optical properties of dilute nitride materials grown by plasma-assisted molecular-beam epitaxy," APL, vol. 91, no. 19, pp. 191903, Sep 2007. Digital object identifier
  4. M. A. Wistey, S. R. Bank, H. B. Yuen, J. S. Harris, M. M. Oye, and A. L. Holmes Jr., "Using beam flux monitor as Langmuir probe for plasma-assisted molecular beam epitaxy," J. Vac. Sci. Technol. B, vol. 23, no. 3, pp. 460-464, May 2005. Digital object identifier
  5. M. M. Oye, M. A. Wistey, J. M. Reifsnider, S. Agarwal, T. J. Mattord, S. Govindaraju, G. A. Hallock, A. L. Holmes Jr., S. R. Bank, H. B. Yuen, and J. S. Harris, "Ion damage effects from negative deflector plate voltages during the plasma-assisted molecular-beam epitaxy growth of dilute nitrides," APL, vol. 86, no. 22, pp. 221902, May 2005. Digital object identifier