Publications

Displaying 57 publications
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Journal Article

  1. (Invited) S. R. Bank, J. C. Campbell, S. J. Maddox, M. Ren, A. K. Rockwell, M. E. Woodson, and S. D. March, "Avalanche Photodiodes Based on the AlInAsSb Materials System," IEEE J. Sel. Top. Quantum Electron., vol. 24, Aug 2018. Digital object identifier
  2. (Invited) S. R. Bank, J. C. Campbell, S. J. Maddox, M. Ren, A. K. Rockwell, M. E. Woodson, and S. D. March, "Avalanche Photodiodes Based on the AlInAsSb Materials System," IEEE Journal of Selected Topics in Quantum Electronics, vol. 24, pp. 1-7, Mar 2018. Digital object identifier
  3. A. K. Rockwell, M. Ren, M. E. Woodson, A. H. Jones, S. D. March, Y. Tan, Y. Yuan, Y. Sun, R. Hool, S. J. Maddox, M. L. Lee, A. W. Ghosh, J. C. Campbell, and S. R. Bank, "Toward Deterministic Construction of Low Noise Avalanche Photodetector Materials," Applied Physics Letters, vol. 113, no. 10, pp. 102106, Dec 2018. Digital object identifier
  4. M. Ren, S. J. Maddox, M. E. Woodson, J. Chen, S. R. Bank, and J. C. Campbell, "Characteristics of AlxIn1-xAsySb1-y (x:0. 3~0. 7) Avalanche Photodiodes," IEEE/OSA Journal of Lightwave Technology, vol. 35, pp. 2380, Jun 2017. Digital object identifier
  5. M. Ren, S. J. Maddox, M. E. Woodson, Y. Chen, S. R. Bank, and J. C. Campbell, "AlInAsSb separate absorption, charge, and multiplication avalanche photodiodes," Applied Physics Letters, vol. 108, no. 19, pp. 191108, May 2016. Digital object identifier
  6. (Invited) S. J. Maddox, M. Ren, M. E. Woodson, S. R. Bank, and J. C. Campbell, "Recent progress in avalanche photodiodes for sensing in the IR spectrum," Proc. SPIE, vol. 9854, pp. 985405-985405, Apr 2016. Digital object identifier
  7. M. Ren, S. J. Maddox, Y. Chen, M. E. Woodson, J. C. Campbell, and S. R. Bank, "AlInAsSb/GaSb staircase avalanche photodiode," APL, vol. 108, no. 8, pp. 081101, Feb 2016. Digital object identifier
  8. M. E. Woodson, M. Ren, S. J. Maddox, Y. Chen, S. R. Bank, and J. C. Campbell, "Low-noise AlInAsSb avalanche photodiode," APL, vol. 108, no. 8, pp. 081102, Feb 2016. Digital object identifier
  9. S. R. Bank, M. A. Wistey, H. B. Yuen, V. Lordi, V. Gambin, and J. S. Harris, "Effects of antimony and ion damage on carrier localization in molecular-beam-epitaxy-grown GaInNAs," J. Vac. Sci. Technol. B, vol. 23, no. 3, pp. 1320-1323, Jun 2005. Digital object identifier
  10. T. Gugov, V. Gambin, M. A. Wistey, H. B. Yuen, S. R. Bank, and J. S. Harris, "Use of transmission electron microscopy in the characterization of GaInNAs(Sb) quantum well structures grown by molecular beam epitaxy," J. Vac. Sci. Technol. B, vol. 22, no. 3, pp. 1588-1592, May 2004. Digital object identifier
  11. K. Volz, V. Gambin, W. Ha, M. A. Wistey, H. B. Yuen, S. R. Bank, and J. S. Harris, "The role of Sb in the MBE growth of (GaIn)(NAsSb)," J. Cryst. Growth, vol. 251, no. 1-4, pp. 360-366, Apr 2003. Digital object identifier
  12. S. R. Bank, W. Ha, V. Gambin, M. A. Wistey, H. B. Yuen, L. L. Goddard, S. Kim, and J. S. Harris, "1. 5 \µm GaInNAs(Sb) lasers grown on GaAs by MBE," J. Cryst. Growth, vol. 251, no. 1-4, pp. 367-371, Apr 2003. Digital object identifier
  13. V. Gambin, H. Wonill, M. A. Wistey, H. B. Yuen, S. R. Bank, S. M. Kim, and J. S. Harris, "GaInNAsSb for 1. 3\—1. 6 \µm-long wavelength lasers grown by molecular beam epitaxy," IEEE J. Sel. Topics Quantum Electron., vol. 8, no. 4, pp. 795-800, Jul 2002. Digital object identifier
  14. W. Ha, V. Gambin, M. A. Wistey, S. R. Bank, S. Kim, and J. S. Harris, "Multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes operating out to 1. 4 mu;m," PTL, vol. 14, no. 5, pp. 591-593, May 2002. Digital object identifier
  15. W. Ha, V. Gambin, M. A. Wistey, S. R. Bank, H. B. Yuen, S. Kim, and J. S. Harris, "Long wavelength GaInNAsSb/GaNAsSb multiple quantum well lasers," Electron. Lett., vol. 38, no. 6, pp. 277-278, Mar 2002. Digital object identifier

Conference Paper

  1. A. M. García, B. D. Aguilar, W. J. Doyle, Y. Wang, D. J. Ironside, A. M. Skipper, M. K. Bergthold, M. L. Lee, D. Wasserman, and S. R. Bank, "Molecular Beam Epitaxy Selective Area Regrowth of High Aspect Ratio Microstructures for Mid-Infrared Optoelectronics," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  2. R. C. White, M. K. Bergthold, A. F. Ricks, F. A. Estévez, D. Wasserman, and S. R. Bank, "Bismuth Incorporation into InSb Towards Long-Wave Infrared Photodetectors," 66th Electronic Materials Conf. (EMC), College Park, Maryland, Jun 2024.
  3. A. M. García, A. M. Skipper, M. K. Bergthold, and S. R. Bank, "SiO2 Surface Planarization for Selective Area Regrowth of High Aspect Ratio Microstructures," 37th North American Molecular Beam Epitaxy Conf. (NAMBE), Madison, WI, Sep 2023.
  4. R. C. White, M. K. Bergthold, T. A. Leonard, A. F. Ricks, D. Wasserman, and S. R. Bank, "InSb-Based Dilute-Bismide Alloys Towards Long-Wave Infrared Sensing," 37th North American Molecular Beam Epitaxy Conf. (NAMBE), Madison, WI, Sep 2023.
  5. R. C. White, M. K. Bergthold, A. J. Muhowski, Y. Wang, I. Okoro, D. Wasserman, and S. R. Bank, "Lattice-Matched InAsSbBi Photodetectors for Long-Wave Infrared Sensing," 81st Device Research Conf. (DRC), Santa Barbara, CA, Jun 2023.
  6. A. M. García, A. M. Skipper, M. K. Bergthold, and S. R. Bank, "SiO2 Surface Planarization for Molecular Beam Epitaxy Selective Area Regrowth of High Aspect Ratio Microstructures," 65th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2023.
  7. A. F. Ricks, R. C. White, Q. Meng, M. K. Bergthold, M. A. Wistey, D. Wasserman, and S. R. Bank, "Bismuth Incorporation in AlInSb for Wide-Bandgap Barriers on InSb," 65th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2023.
  8. R. C. White, M. K. Bergthold, T. A. Leonard, A. F. Ricks, D. Wasserman, and S. R. Bank, "Optical and Structural Properties of InSb-Based Dilute-Bismide Alloys Grown by Molecular Beam Epitaxy," 65th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2023.
  9. R. C. White, M. K. Bergthold, I. Okoro, Y. Wang, L. J. Nordin, A. J. Muhowski, A. F. Ricks, D. Wasserman, and S. R. Bank, "Towards Lattice-Matched Narrow Bandgap InAsSbBi Photodetectors," 36th North American Molecular Beam Epitaxy Conf. (NAMBE), Rehoboth Beach, DE, Sep 2022.
  10. R. C. White, M. K. Bergthold, A. J. Muhowski, L. J. Nordin, A. F. Ricks, D. Wasserman, and S. R. Bank, "Growth of InAsSbBi on InSb Towards Lattice-Matched Longwave-Infrared Optoelectronics," 64th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2022.
  11. A. M. Skipper, A. H. Jones, M. K. Bergthold, A. J. Muhowski, A. M. García, D. J. Ironside, D. Wasserman, J. C. Campbell, and S. R. Bank, "Selective Area Epitaxy by MBE for Self-Aligned III-V Devices," 64th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2022.
  12. A. F. Ricks, R. C. White, Q. Meng, M. K. Bergthold, M. A. Wistey, and S. R. Bank, "Growth and characterization of AlInSbBi for wide-bandgap barriers on InSb," 64th Electronic Materials Conf. (EMC), Columbus, OH, Jun 2022.
  13. S. D. March, A. H. Jones, A. K. Rockwell, M. Ren, Y. Chen, M. E. Woodson, S. J. Maddox, J. C. Campbell, and S. R. Bank, "Modeling and Measurement of Carrier Trapping and Tunneling in AlxIn1-xAsySb1-y Digital Alloys," 61st Electronic Materials Conf. (EMC), Ann Arbor, MI, Jun 2019.
  14. A. K. Rockwell, M. Ren, M. E. Woodson, A. H. Jones, S. D. March, Y. Tan, Y. Yuan, S. J. Maddox, A. W. Ghosh, J. C. Campbell, and S. R. Bank, "Band Structure Influence on Noise Properties of III-V Digital Alloys," 61st Electronic Materials Conf. (EMC), Ann Arbor, MI, Jun 2019.
  15. S. R. Bank, J. C. Campbell, S. J. Maddox, A. K. Rockwell, M. E. Woodson, M. Ren, A. H. Jones, S. D. March, J. Zheng, and Y. Yuan, "Digital alloy growth of low-noise avalanche photodiodes," IEEE RAPID, Miramar Beach, FL, Aug 2018.
  16. (Invited) S. R. Bank, J. C. Campbell, S. J. Maddox, M. Ren, A. K. Rockwell, M. E. Woodson, A. H. Jones, S. D. March, J. Zheng, and Y. Yuan, "Low-Noise Staircase and Conventional Avalanche Photodiodes," International Nano-Optoelectronics Workshop (iNOW), Berkeley, CA, Jul 2018.
  17. A. K. Rockwell, Y. Yuan, S. D. March, A. H. Jones, M. E. Woodson, M. Ren, S. D. Sifferman, S. J. Maddox, J. C. Campbell, and S. R. Bank, "III-V Digital Alloys for Mid-IR Photodetectors," 60th Electronic Materials Conf. (EMC), Santa Barbara, CA, Jun 2018.
  18. M. Ren, Y. Yuan, A. H. Jones, S. J. Maddox, M. E. Woodson, S. R. Bank, and J. C. Campbell, "Operation stability study of AlInAsSb avalanche photodiodes," 2017 IEEE Photonics Conference (IPC), Orlando, FL, Oct 2017.
  19. A. K. Rockwell, M. E. Woodson, M. Ren, K. M. McNicholas, S. D. Sifferman, S. J. Maddox, J. C. Campbell, and S. R. Bank, "Surfactant-Mediated Epitaxy of III-V Digital Alloys," 59th Electronic Materials Conf. (EMC), South Bend, IN, Jun 2017.
  20. (Invited) S. J. Maddox, A. K. Rockwell, M. Ren, M. E. Woodson, J. C. Campbell, and S. R. Bank, "Recent advances in low noise staircase and conventional avalanche photodiodes," 75th Device Research Conference (DRC), South Bend, IN, Jun 2017.
  21. (Invited) S. R. Bank, S. J. Maddox, M. Ren, M. E. Woodson, A. K. Rockwell, and J. C. Campbell, "Staircase and Homojunction Avalanche Detectors in InAlAsSb," Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kohala Coast, HI, Dec 2016.
  22. (Invited) S. R. Bank, S. J. Maddox, M. Ren, M. E. Woodson, A. K. Rockwell, and J. C. Campbell, "Staircase and Homojunction Avalanche Detectors in InAlAsSb," Workshop on Innovative Nanoscale Devices and Systems (WINDS), Kohala Coast, Hawaii, Dec 2016.
  23. M. Ren, M. E. Woodson, Y. Chen, J. C. Campbell, S. J. Maddox, and S. R. Bank, "AlInAsSb Separate Absorption, Charge, and Multiplication Avalanche Photodiodes," 29th IEEE Photonics Conference (IPC), Waikoloa Village, HI, Oct 2016.
  24. (Late News) M. Ren, S. J. Maddox, A. K. Rockwell, Y. Chen, M. E. Woodson, J. C. Campbell, and S. R. Bank, "AlInAsSb Separate Absorption, Charge, and Multiplication Avalanche Photodiodes," 74th Device Research Conf. (DRC), Newark, DE, Jun 2016.
  25. S. J. Maddox, M. Ren, A. K. Rockwell, Y. Chen, M. E. Woodson, J. C. Campbell, and S. R. Bank, "Low-Noise High-Gain Tunneling Staircase Photodetector," 74th Device Research Conf. (DRC), Newark, DE, Jun 2016.
  26. (Invited) M. Ren, S. J. Maddox, M. E. Woodson, Y. Chen, S. R. Bank, and J. C. Campbell, "Low Excess Noise AlxIn1-xAsySb1-y (x: 0. 3~0. 7) Avalanche Photodiodes," IEEE/OSA Conf. on Lasers and Electro Optics (CLEO), San Jose, CA, May 2016.
  27. M. Ren, S. J. Maddox, Y. Chan, M. E. Woodson, S. R. Bank, and J. C. Campbell, "Low excess noise AlInAsSb staircase avalanche photodiode," 2015 73rd Annual Device Research Conference (DRC), Columbus, Ohio, Jun 2015.
  28. M. Ren, S. J. Maddox, Y. Chan, M. E. Woodson, S. R. Bank, and J. C. Campbell, "Low Excess Noise AlInAsSb Staircase Avalanche Photodiode," 73rd Device Research Conf. (DRC), Columbus, OH, Jun 2015.
  29. S. R. Bank, M. A. Wistey, H. B. Yuen, V. Lordi, V. Gambin, and J. S. Harris, "Effects of Antimony and Ion Damage on Carrier Localization in MBE-Grown GaInNAs," North American Molecular Beam Epitaxy Conf. (NAMBE), Banff, Alberta, Canada, Oct 2004.
  30. T. Gugov, V. Gambin, M. A. Wistey, H. B. Yuen, S. R. Bank, and J. S. Harris, "TEM Structural Characterization of GaInNAs and GaInNAsSb Quantum Wells Grown by Molecular Beam Epitaxy," 46th Electronic Materials Conf. (EMC), Notre Dame, IN, Jun 2004.
  31. M. A. Wistey, S. R. Bank, H. B. Yuen, V. Gambin, and J. S. Harris, "Low-Voltage Deflection Plates Reduce Plasma Damage in MBE Dilute Nitride Growth," 46th Electronic Materials Conf. (EMC), Notre Dame, IN, Jun 2004.
  32. T. Gugov, V. Gambin, M. A. Wistey, H. B. Yuen, S. R. Bank, and J. S. Harris, "Use of Transmission Electron Microscopy in the Characterization of GaInNAs(Sb) Quantum Well Structures Grown by Molecular Beam Epitaxy," North American Molecular Beam Epitaxy Conf. (NAMBE), Keystone, CO, Oct 2003.
  33. S. R. Bank, H. B. Yuen, W. Ha, V. Gambin, M. A. Wistey, and J. S. Harris, "Strong Photoluminescence Enhancement of 1. 3 \µm GaInNAs Active Layers by Introduction of Antimony," 45th Electronic Materials Conf. (EMC), Salt Lake City, UT, Jun 2003.
  34. V. Gambin, V. Lordi, W. Ha, M. A. Wistey, K. Volz, S. R. Bank, H. B. Yuen, and J. S. Harris, "High Intensity 1. 3\—1. 6 \µm Luminescence and Structural Changes on Anneal from MBE Grown (Ga,In)(N,As,Sb)," International Conf. on Molecular Beam Epitaxy (MBE), San Fancisco, CA, Sep 2002.
  35. W. Ha, V. Gambin, S. R. Bank, M. A. Wistey, H. B. Yuen, S. Kim, and J. S. Harris, "A 1. 5 \µm GaInNAs(Sb) Laser Grown on GaAs by MBE," Proc. 18th IEEE International Semiconductor Laser Conf. (ISLC), Garmisch, Germany, Sep 2002.