Publications
Journal Article
- (Invited) S. D. Sifferman, H. P. Nair, R. Salas, N. T. Sheehan, S. J. Maddox, A. M. Crook, and S. R. Bank, "Highly strained mid-infrared type-I diode lasers on GaSb," IEEE J. Sel. Top. Quantum Electron., vol. 21, no. 6, pp. 248-257, Nov 2015.
- K. W. Park, H. P. Nair, A. M. Crook, S. R. Bank, and E. T. Yu, "Quantitative scanning thermal microscopy of ErAs/GaAs superlattice structures grown by molecular beam epitaxy," APL, vol. 102, no. 6, pp. 061912, Feb 2013.
- E. M. Krivoy, H. P. Nair, A. M. Crook, S. Rahimi, S. J. Maddox, R. Salas, D. A. Ferrer, V. D. Dasika, D. Akinwande, and S. R. Bank, "Growth and characterization of LuAs films and nanostructures," APL, vol. 101, no. 14, pp. 141910, Oct 2012.
- K. W. Park, V. D. Dasika, H. P. Nair, A. M. Crook, S. R. Bank, and E. T. Yu, "Conductivity and structure of ErAs nanoparticles embedded in GaAs pn junctions analyzed via conductive atomic force microscopy," APL, vol. 100, no. 23, pp. 233117, Jun 2012.
- H. P. Nair, A. M. Crook, K. M. Yu, and S. R. Bank, "Structural and optical studies of nitrogen incorporation into GaSb-based GaInSb quantum wells," APL, vol. 100, no. 2, pp. 021103, Jan 2012.
- K. W. Park, H. P. Nair, A. M. Crook, S. R. Bank, and E. T. Yu, "Scanning capacitance microscopy of ErAs nanoparticles embedded in GaAs pn junctions," APL, vol. 99, pp. 133114, Sep 2011.
- A. M. Crook, H. P. Nair, D. A. Ferrer, and S. R. Bank, "Suppression of planar defects in the molecular beam epitaxy of GaAs/ErAs/GaAs heterostructures," APL, vol. 99, pp. 072120, Aug 2011.
- A. M. Crook, H. P. Nair, and S. R. Bank, "Surface segregation effects of erbium in GaAs growth and their implications for optical devices containing ErAs nanostructures," APL, vol. 98, no. 12, pp. 121108, Apr 2011.
- A. M. Crook, H. P. Nair, and S. R. Bank, "High-performance nanoparticle-enhanced tunnel junctions for photonic devices," Physica Status Solidi (c), vol. 7, no. 10, pp. 2544-2547, Jun 2010.
- H. P. Nair, A. M. Crook, and S. R. Bank, "Enhanced conductivity of tunnel junctions employing semimetallic nanoparticles through variation in growth temperature and deposition," APL, vol. 96, no. 22, pp. 222104, May 2010.
- A. M. Crook, E. Lind, Z. Griffith, M. J. Rodwell, J. D. Zimmerman, A. C. Gossard, and S. R. Bank, "Low resistance, nonalloyed Ohmic contacts to InGaAs," APL, vol. 91, no. 19, pp. 192114, Nov 2007.
- S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, W. Ha, and J. S. Harris, "Low-threshold CW GaInNAsSb/GaAs laser at 1. 49 \µm," Electron. Lett., vol. 39, no. 20, pp. 1445-1446, Oct 2003.
- K. Volz, V. Gambin, W. Ha, M. A. Wistey, H. B. Yuen, S. R. Bank, and J. S. Harris, "The role of Sb in the MBE growth of (GaIn)(NAsSb)," J. Cryst. Growth, vol. 251, no. 1-4, pp. 360-366, Apr 2003.
- S. R. Bank, W. Ha, V. Gambin, M. A. Wistey, H. B. Yuen, L. L. Goddard, S. Kim, and J. S. Harris, "1. 5 \µm GaInNAs(Sb) lasers grown on GaAs by MBE," J. Cryst. Growth, vol. 251, no. 1-4, pp. 367-371, Apr 2003.
- W. Ha, V. Gambin, M. A. Wistey, S. R. Bank, S. Kim, and J. S. Harris, "Multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes operating out to 1. 4 mu;m," PTL, vol. 14, no. 5, pp. 591-593, May 2002.
- W. Ha, V. Gambin, M. A. Wistey, S. R. Bank, H. B. Yuen, S. Kim, and J. S. Harris, "Long wavelength GaInNAsSb/GaNAsSb multiple quantum well lasers," Electron. Lett., vol. 38, no. 6, pp. 277-278, Mar 2002.